GB/T 6619-2009 in English

VALID

Test methods for bow of silicon wafers

Issued on:2009-10-30
Implemented on:2010-06-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $180.00
$175.00

Standard No:	GB/T 6619-2009
Document status:	VALID
Title in English:	Test methods for bow of silicon wafers
Title in Chinese:	硅片弯曲度测试方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2009-10-30
Implemented on:	2010-06-01
Superseding:	GB/T 6619-1995 Test methods for bow of silicon slices
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	GB-National Standard
Related Keywords:	silicon wafers scopethis standard circular silicon wafers test methods test method other semiconductor wafers
Related Topics:	gbt 6619 2009 bend silicon wafer GB/T 6619 bend test Bending detection method bend test Bending strength test method Electrode pad test method Bending strength test method Bend test Negative bending Bend Test Method Paint Curvature Test Paint Curvature Test Bending performance tester Camber test wafer test wafer sheet curve How to measure curvature silicon wafer for testing Silicon test piece Method for measuring curvature of glass Bend Test Standard Test method for flexural strength of plastics GBT6619 GBT6619-1995 GB/T 6619-2009 Curvature bender method Tablet Hardness Test Method Water pump curve test method Curvature measurement calculation method Cylinder curvature test method National standard for shaft curvature Lens curvature detection method Silicone oil alkalinity test method Three point bend test method Torsion measurement method Test method for bending strength of flat spokes

《GB/T 6619-2009硅片弯曲度测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了硅单晶切割片?研磨片?抛光片(以下简称硅片)弯曲度的接触式测量方法?
本标准适用于测量直径不小于25mm,厚度为不小于180μm,直径和厚度比值不大于250的圆形硅片的弯曲度?本测试方法的目的是用于来料验收和过程控制?本标准也适用于测量其他半导体圆片
弯曲度?

Scope

This standard specifies the contact measurement method for the curvature of silicon single crystal slices, grinding slices and polishing slices. This standard is applicable to the measurement of the curvature of circular silicon wafers with a diameter not less than 25 mm, a thickness not less than 180 μm, and a diameter-to-thickness ratio not greater than 250. The purpose of this test method is for incoming material acceptance and process control. This standard is also applicable to the measurement of curvature of other semiconductor wafers.

More samples: JGJ 94-2008 GB 18306-2015 GB 50021-2001(2009)

Sample only — not a preview of GB/T 6619-2009

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