GB/T 13388-1992 in English

《GB/T 13388-1992硅片参考面结晶学取向Ｘ射线测量方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了用Ｘ射线技术测量硅片参考面结晶学取向的方法。本标准适用于硅片参考面结晶学取向与参考面规定取向之间角度偏差的测量。硅片直径为50～125mm，参考面长度为10～50mm。本标准不适用于硅片规定取向在与参考面和硅片表面相垂直的平面内的投影与硅片表面法线之间夹角不小于3°的硅片的测量。

Scope

This standard specifies the method for measuring the crystallographic orientation of the reference plane of silicon wafers by X-ray technology. This standard is applicable to the measurement of the angular deviation between the crystallographic orientation of the silicon wafer reference plane and the specified orientation of the reference plane. The diameter of the silicon wafer is 50-125 mm, and the length of the reference surface is 10-50 mm. This standard does not apply to the measurement of silicon wafers whose specified orientation is in a plane perpendicular to the reference plane and the surface of the silicon wafer, and the angle between the projection of the silicon wafer surface and the normal line of the silicon wafer surface is not less than 3°.