GB/T 13388-2009 in English

《GB/T 13388-2009硅片参考面结晶学取向X射线测试方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了α角的测量方法，α角为垂直于圆型硅片基准参考平面的晶向与硅片表面参考面间角。
本标准适用于硅片的参考面长度范围应符合GB/T 12964和GB/T 12965中的规定，且硅片角度偏离应在-5°到+5°范围之内。

Scope

This standard specifies the measurement method of angle a, which is the angle between the crystal direction perpendicular to the reference plane of the circular silicon wafer and the reference plane of the silicon wafer surface. This standard is applicable to the reference plane length range of silicon wafers, which shall comply with the provisions in GB/T 12964 and GB/T 12965, and the angle deviation of silicon wafers shall be within the range of -5º to +5º. The accuracy of crystal orientation determined by this standard is directly dependent on the accuracy of matching of the reference surface to the datum baffle and the orientation accuracy of the baffle to the relative x-rays. This standard contains the following two test methods: Test method 1 - X-ray edge diffraction method Test method 2 - Laue back reflection X-ray method Test method 1 is non-destructive, in order to make the silicon wafer unique relative to the X-ray goniometer Positioning is similar to GB/T 1555 Test Method 1 except for the use of special wafer fixtures. Compared with the Laue back reflection method, this technique can measure the crystal orientation of the reference surface with higher accuracy. Method 2 is also non-destructive, and is similar to ASTM E82 and DIN 50433 test methods part 3, except that "instantaneous" negatives and special fixtures are used in order to position the reference plane relative to the X-ray beam. Although Method 2 is simpler and faster, it does not have the precision of Method 1 because it uses less accurate and less expensive instruments and fixtures. Method 2 provides a permanent negative record of the measurements. Note: Interpretation of the Laue photo can yield information on wafer misorientation. However this is outside the scope of the test method. Users willing to make this interpretation are referred to ASTM E82 and DIN50433 Test Methods Part 3 or standard X-ray textbooks. Since different fixtures can be used, method 2 is also suitable for the determination of the surface orientation of silicon wafers. Values in this standard are in metric units. Values in imperial units are given in parentheses for information only. Note: This standard does not involve safety issues, even if it is related to the use of the standard. It is the responsibility of the user of the standard to establish appropriate safety and security measures and to determine the scope of the rules and regulations prior to use of the standard.