GB/T 24577-2009 in English

《GB/T 24577-2009热解吸气相色谱法测定硅片表面的有机污染物》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了硅片表面的有机污染物的定性和定量方法,采用气质联用仪或磷选择检测器或者两者同时采用。

Scope

1.1 This standard specifies the qualitative and quantitative methods of organic pollutants on the surface of silicon wafers, using GC-MS or phosphorus selective detectors or both. 1.2 This standard describes the thermal desorption gas chromatograph (TD-GC) and related procedures for sample preparation and analysis. 1.3 The detection limit range of this standard depends on the organic compound to be detected, for example, the detection range of hydrocarbons (C~C) is 10 g/cm~10 g/cm. 1.4 This standard applies to polished silicon wafers and silicon wafers with oxide layers. 1.5 Two methods are covered in this standard. Method A is suitable for sliced silicon wafers, and method B is suitable for intact silicon wafers. The differences between the two methods are described in detail in Section 7.