Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)
test method silicon wafers non-contact scanning method scopethis standard other surface state silicon wafers warpage test photographic copy fine flax cake winder
GB/T 32280-2015 in English

GB/T 32280-2015 in English

SUPERSEDED

Test method for warp of silicon wafers—Automated non-contact scanning method

  • Issued on:2015-12-10
  • Implemented on:2017-01-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $200.00
$194.00
Standard No: GB/T 32280-2015
Document status: SUPERSEDED
Superseded by: GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method
Superseded on: 2022-10-01
Title in English: Test method for warp of silicon wafers—Automated non-contact scanning method
Title in Chinese: 硅片翘曲度测试 自动非接触扫描法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2015-12-10
Implemented on: 2017-01-01
ICS Classification: 77.040-Testing of metals
Chinese Classification: H21-Metal physical property test method
Professional Classification: GB-National Standard
Related Keywords: test method
silicon wafers
non-contact scanning method scopethis standard
other surface state silicon wafers
warpage test
Related Topics: illegal scanner
Multi-grained scanning
silicon wafer
crystal scan
Scanning mobile particle size analyzer
scan test box
Scan version
contact method
Automatic purge box
Auto Scan Analyzer
Automated SEM
automatic scanner
Warpage
Measure warpage
How to measure warpage
UV scan curve
silicon contact
scan picture
disc warping
disc warping
non contact
non-contact scanning
scanning method
Scan silicon wafer
scan sample
Automatic scanner
automatic slide
Automatic scanning
silicon wafer for testing
Silicon test piece
light sheet scanning
scan density
Contact scanning principle
scan english
air scan test
auto scan device
Wafer scanning
scan english
GBT32280
GB/T 32280-2015
GB/T 32280-2022
Pathological slide scan
scanning
Glass warpage test method
Warpage standard sheet
Machining warpage
Semiconductor silicon wafer warpage
US temperature scan
Warpage test table
Optical material warpage test
Silicon wafer warpage industry
Non-contact measurement accuracy
Plastic warpage measurement method
Plastic warpage test method
Silicon wafer contact angle measurement
Warpage measurement abroad
gb/t 32280-2022
Wafer warpage detection

《GB/T 32280-2015硅片翘曲度测试 自动非接触扫描法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了硅片翘曲度的非破坏性、自动非接触扫描测试方法。
本标准适用于直径不小于50mm,厚度不小于100μm的洁净、干燥的切割、研磨、腐蚀、抛光、刻蚀、外延或其他表面状态硅片的翘曲度测试。本方法可用于监控因热效应和(或)机械效应引起的硅片翘曲,也可用于砷化镓、蓝宝石等其他半导体晶片的翘曲度测试。


Scope

This standard specifies the non-destructive, automatic non-contact scanning test method for warpage of silicon wafers. This standard applies to the warpage test of clean and dry cut, ground, corroded, polished, etched, epitaxial or other surface state silicon wafers with a diameter not less than 50 mm and a thickness not less than 100 μm. The method can be used for monitoring the warpage of silicon wafers caused by thermal effects and (or) mechanical effects, and can also be used for warpage testing of other semiconductor wafers such as gallium arsenide and sapphire.

Sample only — not a preview of GB/T 32280-2015
Page: 1 / 0
100%

Loading PDF document...

Error loading PDF. Please make sure the file is valid and try again.

We also recommend

  • GB/T 43894.2-2026 in English

    GB/T 43894.2-2026 in English

    Practice for determining semiconductor wafer near-edge geometry—Part 2: Roll-off amount(ROA)

    2026-01-28
  • GB/T 26068-2018 in English

    GB/T 26068-2018 in English

    Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method

    2018-12-28
  • GB/T 44558-2024 in English

    GB/T 44558-2024 in English

    Test method for dislocation imaging in III-nitride semiconductor materials—Transmission electron microscopy

    2024-09-29
  • GB/T 30857-2014 in English

    GB/T 30857-2014 in English

    Standard test method for thickness and thickness variation on sapphire substrates

    2014-07-24
  • GB/T 14146-2021 in English

    GB/T 14146-2021 in English

    Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method

    2021-05-21
  • GB/T 36705-2018 in English

    GB/T 36705-2018 in English

    王志、李刚、钟圣俊、孟宪卫、王新华、乐有邦、吴晓煜、张倩倩

    2018-09-17
  • GB/T 8760-2020 in English

    GB/T 8760-2020 in English

    Test method for dislocation density of monocrystal gallium arsenide

    2020-09-29
  • GB/T 1550-2018 in English

    GB/T 1550-2018 in English

    Test methods for conductivity type of extrinsic semiconducting materials

    2018-12-28