GB/T 32280-2015 in English
SUPERSEDEDTest method for warp of silicon wafers—Automated non-contact scanning method
- Issued on:2015-12-10
- Implemented on:2017-01-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$194.00
《GB/T 32280-2015硅片翘曲度测试 自动非接触扫描法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了硅片翘曲度的非破坏性、自动非接触扫描测试方法。
本标准适用于直径不小于50mm,厚度不小于100μm的洁净、干燥的切割、研磨、腐蚀、抛光、刻蚀、外延或其他表面状态硅片的翘曲度测试。本方法可用于监控因热效应和(或)机械效应引起的硅片翘曲,也可用于砷化镓、蓝宝石等其他半导体晶片的翘曲度测试。
Scope
This standard specifies the non-destructive, automatic non-contact scanning test method for warpage of silicon wafers. This standard applies to the warpage test of clean and dry cut, ground, corroded, polished, etched, epitaxial or other surface state silicon wafers with a diameter not less than 50 mm and a thickness not less than 100 μm. The method can be used for monitoring the warpage of silicon wafers caused by thermal effects and (or) mechanical effects, and can also be used for warpage testing of other semiconductor wafers such as gallium arsenide and sapphire.

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