GB/T 19444-2004 in English

SUPERSEDED

Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction

Issued on:2004-02-05
Implemented on:2004-07-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $80.00
$78.00

Standard No:	GB/T 19444-2004
Document status:	SUPERSEDED
Superseded by:	GB/T 19444-2025 Test method for oxygen precipition characteristics of silicon wafers—Interstitial oxygen reduction
Superseded on:	2026-01-01
Title in English:	Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
Title in Chinese:	硅片氧沉淀特性的测定-间隙氧含量减少法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2004-02-05
Implemented on:	2004-07-01
ICS Classification:	29.040.01-Insulating fluids in general
Chinese Classification:	H26-Metal nondestructive testing method
Professional Classification:	GB-National Standard
Related Keywords:	interstitial oxygen precipitation characteristics oxygen precipitation characterization silicon wafers interstitial oxygen reduction scopethis standard oxygen precipitation characteristics
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《GB/T 19444-2004硅片氧沉淀特性的测定间隙氧含量减少法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。
本标准规定了由测量硅片间隙氧含量的减少量来检验硅片氧沉淀特性的方法原理、取样规则、热处理程序、试验步骤、数据计算等内容。本标准用于定性比较两批或多批集成电路用硅片间隙氧沉淀特性。

Scope

This standard specifies the method principle, sampling rules, heat treatment procedures, test procedures, data calculation, etc. for testing the oxygen precipitation characteristics of silicon wafers by measuring the reduction of oxygen content in the gap between silicon wafers. This standard is used to qualitatively compare two or more batches of interstitial oxygen precipitation characteristics of silicon wafers for integrated circuits.

More samples: JJG 21-2008 GB 50021-2001(2009) YD/T 3934-2021

Sample only — not a preview of GB/T 19444-2004

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