GB/T 6616-1995 in English

《GB/T 6616-1995半导体硅片电阻率及硅薄膜薄层电阻测定 非接触涡流法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了硅片体电阻率和硅薄膜薄层电阻的非接触涡流测量方法。本标准适用于测量直径或边长大于30mm、厚度为0.1～1mm的硅单晶切割片、研磨片和抛光片(简称硅片)的电阻率及硅薄膜的薄层电阻。

Scope

This standard specifies the non-contact eddy current measurement method for the bulk resistivity of silicon wafers and the sheet resistance of silicon thin films. This standard is applicable to the measurement of the resistivity and the sheet resistance of silicon thin films of silicon single crystal cutting, grinding and polishing wafers (silicon wafers for short) with a diameter or side length greater than 30 mm and a thickness of 0.1 to 1 mm. When measuring thin-film sheet resistance, the effective sheet resistance of the substrate should be at least 1000 times the sheet resistance of the thin film. The measurement ranges of silicon wafer bulk resistivity and silicon film sheet resistance are 1.0×10^-3～2×10²Ω cm and 2～3×10³π/□ .