GB/T 42902-2023 in English

1. Scope and applicability of the standard

This standard applies to surface defect testing of 4H-SiC epitaxial wafers and describes the specific method of detection using laser scattering.

2. Comparison of standard frameworks

3. Explanation of professional terms and actual cases

4. Background of standard formulation and analysis of technological evolution

With the widespread application of wide bandgap semiconductor materials (such as silicon carbide) in the field of power devices, the requirements for material quality are increasing. Surface defects are one of the key factors affecting device performance, so it is particularly important to develop efficient defect detection methods. Laser scattering method, as a non-contact detection technology, has been widely used in the semiconductor industry due to its high sensitivity and high resolution.

5. Implementation suggestions

1. Equipment selection: Select a laser with a wavelength of 313nm~700nm, and it is recommended to use a 355nm or 405nm laser.
2. Test conditions: The temperature is controlled at (22±2)℃, the relative humidity is maintained at (45±5)%, and the cleanliness meets ISO5 standards.
3. Data processing: The number of defects needs to be classified in combination with multi-dimensional information such as signal channel, shape, size, etc.