GB/T 6352-1998 in English
VALIDSemiconductor devices Discrete devices Part 6:Thyristors-Section One--Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A
- Issued on:1998-01-01
- Implemented on:1999-06-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$175.00
| Standard No: | GB/T 6352-1998 |
| Document status: | VALID |
| Title in English: | Semiconductor devices Discrete devices Part 6:Thyristors-Section One--Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A |
| Title in Chinese: | 半导体器件 分立器件 第6部分:闸流晶体管 第一篇 100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范 |
| Language: | English |
| File Format: | Electronic (PDF) |
| Delivery: | Via email within 1~3 business days |
| Issued on: | 1998-01-01 |
| Implemented on: | 1999-06-01 |
| Superseding: |
GB 6352-1986 Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A (Applicable for certification)
|
| ICS Classification: | 31.080.20-Thyristors |
| Chinese Classification: | L43-Semiconductor rectifier devices |
| Professional Classification: | GB-National Standard |
| Related Keywords: | blank detail specification
semiconductor devices discrete devices part detailed specification triode thyristors reverse-blocking triode thyristors |
| Related Topics: | astm +6352
blank stream GBT6352 GBT6352-1998 gb/t 6352-2008 |
《GB/T 6352-1998半导体器件 分立器件 第6部分:闸流晶体管 第一篇 100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范》由TC78(全国半导体器件标准化技术委员会)归口,主管部门为工业和信息化部(电子)。
本空白详细规范规定了制定100A以下(含100A)环境或管壳额定的反向阻断三极闸流晶体管(包括快速型)详细规范的基本原则。
Scope
This blank detailed specification specifies the basic principles for formulating detailed specifications for reverse-blocking triode thyristors (including fast type) rated below 100A (including 100A) or case rating, and all detailed specifications within this range should be formulated as much as possible Consistent with this blank detail specification.

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GB/T 6590-1998 in English
Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A
1998-01-01