YS/T 23-1992 in English

SUPERSEDED

Thickness determination for silicon epitaxial layers - Stacking fault method

Issued on:1992-03-09
Implemented on:1993-01-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $60.00
$59.00

Standard No:	YS/T 23-1992
Document status:	SUPERSEDED
Superseded by:	YS/T 23-2016 Test method for thickness of epitaxial layers-Stacking fault size
Superseded on:	2016-09-01
Title in English:	Thickness determination for silicon epitaxial layers - Stacking fault method
Title in Chinese:	硅外延层厚度测定堆垛层错尺寸法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1992-03-09
Implemented on:	1993-01-01
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	YS-Non-ferrous Metal
Related Keywords:	silicon epitaxial layers thickness determination fault method thickness method
Related Topics:	ys/t 35.1-1992 Layer thickness thickness layer stacking fault ys/t 23-1992 layer method Silicon epitaxy Thickness English Thickness measurement Fault wrong titanium stacking fault stacking fault contrast epitaxy layer thickness layer method ys/t 118.2-1992 Eight inch epitaxial furnace Film thickness measured by UV Epitaxy to stack Silicon epitaxial thickness testing method Hardness measurement of surfacing layer

本标准规定了根据堆垛层错尺寸测量硅处延层厚度的方法
本标准适用于在<111>,tloo>和(110)晶向的硅单晶衬底仁生长的硅外延层厚度的测缝
外延层中应存在着发育完整的堆垛层错，其大小可用干涉相衬显微镜r:接观察(非破坏性的)，或经化学腐蚀后用金相显微镜观察(破坏性的)。测量范围为2^75 um.

More samples: DL/T 368-2010 JGJ 94-2008 JC/T 2453-2018

Sample only — not a preview of YS/T 23-1992