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Database: 365,228(8 Aug 2026)
test method refractive index insulator thickness silicon substrates ellipsometry scopethis method standard samples condensate recovery management system extruded parts
YS/T 839-2012 in English

YS/T 839-2012 in English

VALID

Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

  • Issued on:2012-11-07
  • Implemented on:2013-03-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $180.00
$175.00
Standard No: YS/T 839-2012
Document status: VALID
Title in English: Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry
Title in Chinese: 硅衬底上绝缘体薄膜厚度及折射率的椭圆偏振测试方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2012-11-07
Implemented on: 2013-03-01
ICS Classification: 77.120.99-Other non-ferrous metals and their alloys
Chinese Classification: H68-Precious metals and their alloys
Professional Classification: YS-Non-ferrous Metal
Related Keywords: test method
refractive index
insulator thickness
silicon substrates
ellipsometry scopethis method
Related Topics: Substrate
membrane thickness
Refractive index
membrane thickness
insulator
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ys/t836-2012
ys/t 745.9-2012
Ellipsometer thickness
Ellipsometer test method
Two methods of ellipsometer
film thickness
film thickness
Film Thickness Measurement
Elliptical Polarization Measurement Method for Insulator Film Thickness and Refractive Index on Silicon Substrate
ys/t+3017-2012
Ellipse frequency
insulating substrate
Measuring Film Thickness
Ellipsometer method
Elliptical polarization
Polarization ellipsoid
Polarization + Diffraction +
thin film substrate
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Ellipticity
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Ellipticity method
ys/t798-2012
semi-insulating substrate
Polarization Ellipticity
"Insulator
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Fsgs basement membrane thinning
Film thickness test on silicon substrate
Polarization degree test method
Silicon carbide substrate thickness
Elliptical film thickness
Test method for silane film weight
ys/t 789 2012
ys/t817-2012
ys/t789-2012
ys/t858-2012
ys/t 839-2012

本方法规定了用椭圆偏振测试方法测量生长或沉积在硅衬底上的绝缘体薄膜厚度及折射率的方法。
本方法适用于薄膜对测试波长没有吸收和衬底对测试波长处不透光、且已知测试波长处衬底折射率和消光系数的绝缘体薄膜厚度及折射率的测量。对于非绝缘体薄膜,满足一定条件时,方可采用本方法。


Scope

This method specifies the method for measuring the thickness and refractive index of insulator films grown or deposited on silicon substrates using elliptical polarization testing. This method is suitable for measuring the thickness and refractive index of insulator films where the film has no absorption of the test wavelength and the substrate is opaque to the test wavelength, and the refractive index and extinction coefficient of the substrate at the test wavelength are known. For non-insulating films, this method can be used only when certain conditions are met.

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