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Database: 365,228(8 Aug 2026)

Diode electrode plate

Diode electrode plate, Total:300 items.

The international standard classification for "Diode electrode plate" includes: Optoelectronics. Laser equipment , Installations and equipment for waste disposal and treatment , Acid secondary cells and batteries , Copper and copper alloys , Lead, zinc, tin and their alloys , Cadmium, cobalt and their alloys , Other products of non-ferrous metals , Other non-ferrous metals and their alloys , Glass products , Diodes , Lead, zinc and tin products , Copper products , Flat steel products and semi-products , Aluminium products , Conducting materials , Processing equipment .

The Chinese standard classification for "Diode electrode plate" includes: Special electronic technology material , Technical Management , Technical management , Technical management , Electrical system and equipment , Environmental protection equipment , Electrical energy storage device , Welding and cutting equipment , Heavy metals and their alloys , Precious metals and their alloys , Industrial technical glass , Semiconductor diode , Light metals and their alloys , Carbon material , Optical communication equipment , Chemical equipment , Ionizating Radiation Measurement , Steel sheet and strip .


Group Standards of the People's Republic of China

Professional Standard - Military and Civilian Products

  • WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
  • WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes

Professional Standard - Electron

  • SJ/T 11470-2014 Epitaxial wafers of light-emitting diodes
  • SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
  • SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
  • SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
  • SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
  • SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
  • SJ 1947-1981 Detail specification for silicon power rectifier diodes,Type 2CZ32B,2DZ32B,2CZ33B and 2DZ33B
  • SJ 2216-1982 Silicon photodiodes
  • SJ/T 11624-2016 Specifications of LED devices for LED displays
  • SJ 1775-1981 Cermet-sealed electrodes
  • SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
  • SJ/T 2216-2015 Technical specification for photodiode of silicon

Taiwan Provincial Standard of the People's Republic of China

Professional Standard - Aviation

Professional Standard - Machinery

Guangdong Provincial Standard of the People's Republic of China

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 23520-2022 Platinum clad anode sheet and plate for cathodic protection
  • GB/T 2056-2005 Copper、zinc、cadmium、nickel、tin、anode sheets for electric plating
  • GB/T 23520-2009 Platinum/niobium clad anode strip for Cathodic Protection
  • GB/T 2057-1989 Nickel anode sheets
  • GB/T 1471-1988 Lead plate for anode
  • GB/T 2528-1989 Tin anode sheets
  • GB/T 2056-1980 Copper sheets for anode in electro-plate
  • GB/T 23636-2017 Plate for lead-acid battery
  • GB/T 23636-2009 Plate for lead-acid battery
  • GB/T 2055-1989 Cadmium anode sheets
  • GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e
  • GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle
  • GB/T 45543-2025 Substrate glass for organic light emitting diode (OLED) display devices
  • GB/T 2058-1989 Zinc anode sheet

Professional Standard - Education

Professional Standard - Non-ferrous Metal

  • YS/T 1090-2024 Cathode plate for copper electrowinning in hydrometallurgy
  • YS/T 995-2024 Anode plate for zinc electrowinning in hydrometallurgy
  • YS/T 1088-2015 Cathode plate for zinc electrowinning in hydrometallurgy
  • YS/T 1089-2015 Anode plate for copper electrowinning in hydrometallurgy
  • YS/T 498-2006 Lead anode plate for electro-winning
  • YS/T 995-2014 Anode plate for zinc electrolysis in hydrometallurgy
  • YS/T 1088-2024 Cathode plate for zinc electrowinning in hydrometallurgy
  • YS/T 411-1998 The measuring method of CO�2 reaction of anode carbon anode paste for aluminium electrolysis
  • YS/T 1089-2024 Anode plate for copper electrowinning in hydrometallurgy
  • YS/T 1090-2015 Cathode plate for copper electrowinning in hydrometallurgy

Professional Standard - Post and Telecommunication

Professional Standard - Chemical Industry

National Metrological Verification Regulations of the People's Republic of China

  • JJG 761-1991 Verification Regulation of Electrode Type Salinometer
  • JJG 761-2016 Verification Regulation of Electrode Type Salimeter

Jiangxi Provincial Standard of the People's Republic of China

Professional Standard - Aerospace

Professional Standard - Ferrous Metallurgy

  • YB/T 4215-2010 Cold rolled precision strip for the lead frame of diode

U.S. Military Regulations and Norms

International Electrotechnical Commission (IEC)

  • IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
  • IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
  • IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
  • IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
  • IEC 60747-3:2013 Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
  • IEC 60747-3:1985 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
  • IECQ CS 038000-CN0002-2017 Packaged LED – Type 3014 Standard Optical Component
  • PQC 105-1992 Blank Detail Specification for Light Emitting Diodes@ Light Emitting Diode Arrays
  • IEC 60747-3/AMD1:1991 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
  • IEC 60747-3/AMD2:1993 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2
  • QC 750105-1986 Semiconductor Devices; Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes Section Two-Blank Detail Specification for Voltage-Regulator Diodes and Voltage-Reference Diodes@ Exluding Temperature-Compensated Precision Ref. Diodes (IEC
  • IEC TS 62504:2011 General lighting - LEDs and LED modules - Terms and definitions
  • IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
  • IEC 62922:2016/AMD1:2021 Organic light emitting diode (OLED) panels for general lighting - Performance requirements
  • IEC 62922:2016+AMD1:2021 CSV Organic light emitting diode (OLED) panels for general lighting - Performance requirements

Gosstandart of Russia

  • GOST 17792-1972 Standarde reference silver-silver cloride saturate electrode of second class
  • GOST 21107.13-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for pulsed thyratrons and gas-filled rectifiers
  • GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
  • GOST R 51106-1997 Lazers injection, lazer heads, lazers diodes matices, lazers diodes. Methods for measurement of parameters
  • GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
  • GOST 28625-1990 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes. Section 2. Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diod
  • GOST 21011.1-1976 High-voltage kenotrons. The anode current measurement method
  • GOST R 70873-2023 Semiconductor rectifier diodes and poles. Parameters system
  • GOST 29210-1991 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes
  • GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
  • GOST 18604.27-1986 Power high-voltage bipolar transistors. Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current
  • GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
  • GOST R 54814-2018 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
  • GOST R 70998-2023 Injection lasers, laser heads, laser diodes matrices, laser diodes. Parameters system
  • GOST R 54814-2011 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
  • GOST 8.117-1982 State system of ensuring the uniformity of measurements. Diode slideback voltmeters. Methods and means of verification

American National Standards Institute (ANSI)

Association Francaise de Normalisation

  • NF C93-872:1987 Digital receivers with pin photodiode.
  • NF EN 120001:1992 Particular framework specification: light-emitting diodes, light-emitting diode arrays, light-emitting diode displays without resistance or internal logic circuits
  • NF EN 120005:1992 Special frame specification: photodiodes, photodiode arrays (Not intended for optical fiber applications}
  • NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
  • NF C96-832:1981 Semiconductors. Microwave diodes. Schottky diodes. General requirements.
  • NF A82-130*NF EN 25827:1992 Spot welding. Electrode back-ups and clamps.
  • NF A82-104-3*NF EN ISO 5821:2025 Resistance welding - Spot welding electrodes - Female electrode caps
  • NF L58-334-001*NF EN 2593-001:2015 Aerospace series - Bases for 10 A eletromagnetic plug-in relays, two anf four poles double thrown - Part 001 : technical specification
  • NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
  • NF EN 120002:1992 Particular framework specification: infrared emitting diodes, networks of infrared emitting diodes
  • NF C86-815:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.
  • NF C93-120-002*NF EN 120002:1992 Blank Detail Specification : Infrared emitting diodes, infrared emitting diode arrays

Underwriters Laboratories (UL)

  • UL 8752-2024 Organic Light Emitting Diode (OLED) Panels / Panneaux à diodes électroluminescentes organiques (DELO)
  • UL 8752-2012 Organic light emitting diode (OLED) panels
  • UL 8752-2018 Organic light emitting diode (OLED) panels
  • UL SUBJECT 8752-2011 Outline of Investigation for Organic Light Emitting Diode(Oled) Panels
  • UL 1598C-2017 UL Standard for Safety Light-Emitting Diode (LED) Retrofit Luminaire Conversion Kits
  • UL 1598C-2014 UL Standard for Safety Light-Emitting Diode (LED) Retrofit Luminaire Conversion Kits (First Edition; Reprint with revisions through and including July 12@ 2017)
  • UL SUBJECT 8752-2012 OUTLINE OF INVESTIGATION FOR ORGANIC LIGHT EMITTING DIODE (OLED) PANELS (Issue 2)

Czech Standards Institute (UNMZ)

Canadian Standards Association (CSA)

German Institute for Standardization

  • DIN 46284:1972 Two- and three-pole socket terminal strips (appliance terminals) 380 V a.c. and 440 V d.c. for conductors up to 2,5 mm<(hoch)2>
  • DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
  • DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
  • DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
  • DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
  • DIN EN 2593-001:2015 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification; German and English version EN 2593-001:2014
  • DIN IEC 60747-3:1992 Semiconductor devices; discrete devices; part 3: signal diodes and regulator diodes; identical with IEC 60747-3:1985
  • DIN EN 2593-001:2015-03 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification; German and English version EN 2593-001:2014
  • DIN EN 2593-001 E:2014 Draft Document - Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification; German and English version FprEN 2593-001:2014
  • DIN EN ISO 5821:2025-10 Resistance welding - Spot welding electrodes - Female electrode caps (ISO 5821:2025)
  • DIN 65168:1988-12 Aerospace; plug-in relays; DC 28 V, one- and three pole, 10 Amp, polarized, monostable
  • DIN EN 2593-001 E:2014-11 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification
  • DIN 41077:1980-04 Two-pole plug for polarized secondary clocks; connecting dimensions
  • DIN 40737-3:2015-09 Lead acid batteries - Part 3: Stationary vented batteries with positive tubular plates
  • DIN EN 120002:1997-02 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays; German version EN 120002:1992
  • DIN 65167:1988-12 Aerospace Plug-in Relays, DC 28V, 2Pole and 4Pole, 5A, Polarized, Monostable
  • DIN EN 60747-3 E:2010-11 Semiconductor devices Part 3: Signal (including switching diodes) and regulating diodes
  • DIN IEC 747-3:1992 Semiconductor devices Discrete devices Part 3: Signal diodes and Zener diodes

Spanish Association for Standardization (UNE)

  • UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
  • UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
  • UNE-EN 2593-001:2014 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification (Endorsed by AENOR in February of 2015.)
  • UNE-EN 120002:1992 Blank Detail Specification: Infrared emitting diodes, infrared emitting diode arrays

Korean Agency for Technology and Standards (KATS)

  • KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
  • KS C IEC 60747-3-2:2006 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference
  • KS C IEC 60747-3-1:2006 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
  • KS C IEC 60747-3:2006 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
  • KS C IEC 60747-3:2016 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes
  • KS C 6990-2001 General rules of photodiodes for fiber optic transmission
  • KS C IEC 60747-3-2-2021 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
  • KS C 2511-1981 Steel sheets FOR POLE CORE
  • KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
  • KS C 6905-2001 General rules of laser diodes for fiber optic transmission
  • KS C IEC 60747-2-1:2006 Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section one: Blank detail specification for rectifier diodes(including avalanche rectifier diodes), ambient and case-rated, up to 100 A
  • KS C IEC 60747-3-2-2006(2016) Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
  • KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
  • KS D 5584-1992(2002) NICKEL SHEETS AND STRIPS FOR CATHODE OF ELECTRONIC TUBE
  • KS D 5584-1981 NICKEL SHEETS AND STRIPS FOR CATHODE OF ELECTRONIC TUBE
  • KS C IEC 60747-3-2-2006(2021) Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
  • KS C IEC 60747-3-1-2021 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
  • KS C 7120-1990 Light Emitting Diodes(for Indication)
  • KS C IEC 60747-3-1-2006(2021) Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
  • KS C IEC 60747-3-1-2006(2016) Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
  • KS C IEC 62922-2019 Organic light emitting diode (OLED) panels for general lighting —Performance requirements
  • KS C 7120-2021 Light Emitting Diodes(for Indication)
  • KS C IEC 62922:2019 Organic light emitting diode (OLED) panels for general lighting —Performance requirements
  • KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
  • KS C 5213-1981 RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
  • KS C 5213-1981(1997) RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
  • KS C IEC 62868-2018(2023) Organic light emitting diode (OLED) panels for general lighting – Safety requirements
  • KS C IEC 62922-2019(2024) Organic light emitting diode (OLED) panels for general lighting —Performance requirements

Underwriter Laboratories of Canada (ULC)

Standard Association of Australia (SAA)

European Standard for Electrical and Electronic Components

  • EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
  • EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • EN 120002:1992 Blank detail specification: infrared emitting diodes, infrared emitting diode arrays

British Standards Institution (BSI)

  • BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
  • BS 6290-3:1999 Lead-acid stationary cells and batteries - Specification for the flat positive plate type
  • BS 4215-7:1987 Resistance spot welding electrodes, electrode holders and ancillary equipment - Specification for male electrode caps
  • BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
  • BS EN ISO 5821:2025 Resistance welding. Spot welding electrodes. Female electrode caps
  • BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • BS QC 750001:1986 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes
  • BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • BS E9375:1975 Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
  • BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
  • BS 4215-5:1987 Resistance spot welding electrodes, electrode holders and ancillary equipment-Specification for electrode back-ups and clamps
  • BS 4215-15:1990 Resistance spot welding electrodes, electrode holders and ancillary equipment - Specification for insulated pins for use in electrode back-ups
  • BS 4215:1967 Specification for spot welding electrodes and electrode holders
  • BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
  • BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
  • BS EN 62868:2015 Organic light emitting diode (OLED) panels for general lighting. Safety requirements

National Standardisation Body (ASRO)

  • STAS 10626/2-1981 Electrodes for resistance spot welding ELECTRODE CAPS Forms and dimensions
  • STAS 10626/1-1981 Electrodes for resistance spot welding STRAIGHT ELECTRODES Forms and dimensions
  • STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
  • STAS 11532-1987 COPPER-CHROME BARS AND PLATES FOR CONTACT ELECTRODES
  • STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes
  • STAS 12123/2-1983 Semiconductor devices LOW POWER SIGNAL DIODES, INCLUDING SWITCHING DIODES Measuring methods for electrical characteristics

European Committee for Standardization (CEN)

  • EN ISO 5821:2025 Resistance welding - Spot welding electrodes - Female electrode caps (ISO 5821:2025)

Danish Standards Foundation

  • DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di
  • DANSK DS/EN 120001:2016 Blank Detail Specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • DANSK DS/EN 120005:2016 Blank Detail Specification: Photodiodes, photodiode arrays (not intended for fibre optic applications)
  • DS/IEC 747-3:1986 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes
  • DANSK DS/EN 2593-001:2015 Aerospace series – Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown – Part 001: Technical specification
  • DS/IEC 747-2-1:1990 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. Section one: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
  • DANSK DS/EN 120002:2016 Blank Detail Specification: Infrared emitting diodes, infrared emitting diode arrays
  • DS/IEC 747-3-1:1987 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section 1: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

Argentine Institute of Standardization

Defense Logistics Agency

Swedish Institute for Standards

Lithuanian Standards Office

  • LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
  • LST EN 120002-2001 Blank detail specification. Infrared emitting diodes, infrared emitting diode arrays

Japan Electronics and Information Technology Industries Association

Japan Electronics and Information Technology Industries Association

Bureau of Indian Standards

  • IS 1651-2013 Stationary cells and batteries, lead-acid type (with tubular positive plates)
  • IS/QC 750105-1994 Semiconductor Devices - Discrete Devices - Signal (Including Switching) and Regulator Diodes -Blank Detail Voltage-Regulator Diodes and Voltage-Reference Diodes, Excluding Temperature-Compensated Precision Reference Diodes

Society of Automotive Engineers (SAE)

Indonesia Standards

  • SNI 04-2000-1990 Kutub tanah tipe pelat untuk pentanahan perangkat telekomunikasi

International Organization for Standardization (ISO)

  • ISO 5821:2025 Resistance welding. Spot welding electrodes. Female electrode caps
  • ISO 5827:1983 Spot welding; Electrode back-ups and clamps

Magyar Szabványügyi Testület

  • MSZ 10906/19-1969 Electrode tube power mark measurement mode. Microelectrode tube band definition
  • MSZ 10906/3.lap-1963 Electrode tube power mark measurement mode. Anode current, cathode current, you manage to bring the grid to measure the current
  • MSZ 10906/12.lap-1964 Electrode tube power mark size pattern. Ability to measure static electrodes between
  • MSZ 10906/6.lao-1963 Electrode tube. Electricity sign size pattern. Locked product due to anode current measurement
  • MSZ 6813/2-1981 spot welding electrode capped electrode

Polski Komitet Normalizacyjny (PKN)

South African Bureau of Standard

Standards Norway

  • NS-EN 2593-001:2014 Aerospace series — Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown — Part 001: Technical specification

Aerospace Industries Association

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

Institute of Electrical and Electronics Engineers (IEEE)

The Directorate General of Specifications and Metrology (DGSM)

  • OS GSO ISO 2315:2016 Aircraft -- Two- and four-pole sealed electromagnetic relays, 2 A and 3 A -- Clearance and fixing dimensions

GCC Standardization Organization

  • GSO ISO 2315:2016 Aircraft -- Two- and four-pole sealed electromagnetic relays, 2 A and 3 A -- Clearance and fixing dimensions

Military Standards (MIL-STD)

Portuguese Institute of Quality

  • NP 3234-2-1987 Electronic originals. Electroluminescent diodes. Electroluminescent diode matrix, detailed specifications
  • NP 3234-3-1987 Electronic originals. Infrared emitting diodes. Infrared emitting diode matrix, detailed specifications

Aerospace, Security and Defence Industries Association of Europe (ASD)

  • ASD-STAN PREN 2593-001-2010 Aerospace series Bases for 10 A electromagnetic plug-in relays, two and four poles double throw Part 001: Technical specification (Edition P 1)
  • PREN 2593-001-2010 Aerospace series Bases for 10 A electromagnetic plug-in relays@ two and four poles double throw Part 001: Technical specification (Edition P 1)

Kingdom of Bahrain Testing and Metrology Directorate

  • BH GSO ISO 2315:2017 Aircraft -- Two- and four-pole sealed electromagnetic relays, 2 A and 3 A -- Clearance and fixing dimensions

Thai Industrial Standards Institute (TISI)

  • TIS 1971-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section two-blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes
  • TIS 1970-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section one-blank detail specification for signal diodes,switching diodes and controlled-avalanchediodes

Japanese Industrial Standards Committee (JISC)

American Welding Society (AWS)

European Committee for Electrotechnical Standardization(CENELEC)

  • EN 150006:1991 Blank Detail Specification: Variable Capacitance Diodes

National Electrical Manufacturers Association(NEMA)

  • NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation