plateau third pole

plateau third pole, Total:183 items.

The international standard classification for "plateau third pole" includes: Pesticides and other agrochemicals , Copper and copper alloys , Fungicides .

The Chinese standard classification for "plateau third pole" includes: Technical management , Pesticide , Heavy metals and their alloys analysis method , Electrical system and equipment , Rare metals and their alloys analysis method .

Xizang Provincial Standard of the People's Republic of China

DB54/T 0274.1-2023 The Third Pole Brand Evaluation System on Earth Part 1: General Principles
DB54/T 0274.2-2023 Part 2 of the Earth’s Third Pole Brand Evaluation System: Plateau Bio Brand Evaluation Requirements

Professional Standard - Electron

SJ 790-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG121
SJ 1411-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA5
SJ 934-1975 Detail specification for silicon NPN low frequency high power high reversse voltage transistors,Type 3DD100
SJ 1425-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA106
SJ 1673-1980 Detail specification for silicon NPN forward AGC high frequency low power transistors,Type 3DG254
SJ 1427-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA92
SJ 794-1974 Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors,Type 3DG141
SJ 1468-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG100
SJ 2291-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG153
SJ 1408-1978 Detail specification for silicon NPN high frequency high power transistors,Type 3DA101
SJ 1406-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA96
SJ 1426-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA21
SJ 2292-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG154
SJ 796-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG160
SJ 1483-1979 Detail specification for silicon PNP epitaxial planar high frequency low power noise transistors,Type 3CG140
SJ 1482-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG132
SJ 935-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD101 and 3DD102
SJ 1683-1980 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA152
SJ 2369-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD253,3CD254 and 3CD453
SJ 2293-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG155
SJ 1480-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130
SJ 1478-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG121
SJ 797-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
SJ 1412-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA14
SJ 784-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG102
SJ 1418-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA10
SJ 1407-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA4
SJ 2277-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG115
SJ 1428-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA107
SJ 2368-1983 Detail specification for silicon PNP low frequncy high voltage high power transistors,Type 3CD251,3CD252 and 3CD451
SJ 2287-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Tuype 3DG148
SJ 1485-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG170
SJ 1430-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA89
SJ 1486-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180
SJ 2286-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG147
SJ 1420-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA104
SJ 2278-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG72
SJ 936-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD103 and 3DD104
SJ 785-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG103
SJ 1470-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG102
SJ 1479-1979 Detail specifiation for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG122
SJ 1410-1978 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA98
SJ 2285-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG146
SJ 2367-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD249,3CD250 and 3CD449
SJ 2374-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD264,3CD464
SJ 791-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG122
SJ 1477-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG120
SJ 795-1974 Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors,Type 3DG142
SJ 1415-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA28
SJ 1424-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA105
SJ 2366-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD447
SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD267 and 3CD467
SJ 2372-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD259 and 3CD260
SJ 2373-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD262 and 3CD462
SJ 1416-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA100
SJ 1682-1980 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA151
SJ 1473-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG111
SJ 782-1974 Detail specfication for silicon NPN planar high frequency low power transistors,Type 3DG100
SJ/T 2217-1982 Silicon phototransistors
SJ 783-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG101
SJ 2284-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG145
SJ 2294-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG156
SJ 1413-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA2
SJ 1484-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG160
SJ 1422-1978 Detail specificaiton for silicon NPN high-frequency high power transistors,Type 3DA37
SJ 2290-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG151
SJ 2274-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG113
SJ 1417-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA103
SJ 1481-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG131
SJ 787-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG111
SJ 1672-1980 Detail specification for silicon NPN forward AGC high frequency low power transistors,Type 3DG253
SJ 2370-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD255,3CD256 and 3CD455
SJ 1421-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA22
SJ 801-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG181
SJ 1472-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG110
SJ 2279-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG123
SJ 800-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG180
SJ 2282-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG143
SJ 1471-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG103
SJ 2288-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG149
SJ 1429-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA108
SJ 1405-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA1
SJ 1475-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG113
SJ 2276-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG114
SJ 1476-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG114
SJ 2283-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG144
SJ 799-1974 Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors,Type 3DG170
SJ 789-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG120
SJ 1423-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA32
SJ 1409-1978 Detail specification for silicon NPN high-frequency high pwer transistors,Type 3DA3
SJ 2371-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD257,3CD258 and 3CD457
SJ 786-1974 Detail specification for silicon NPN planar high frequency low power transistors,Type 3DG110
SJ 2275-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG85
SJ 2271-1983 Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes
SJ 2272-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG44
SJ 1431-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA39
SJ 1469-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG101
SJ 2281-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG132
SJ 1474-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG112
SJ 1419-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA18
SJ 2289-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG151
SJ 1414-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA102
SJ 2273-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG81
SJ 788-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG112

Professional Standard - Commodity Inspection

SN/T 3627-2013 Determination of melamine in liquefied raw milk for export. Polarography method

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB 12685-2006 Tricyclazole technical
GB/T 13293.10-1991 Higher purity copper cathode－Determination of zinc content－Flame atomic absorption spectrometric method
GB 12685-1990 Tricyclazole technical

Professional Standard - Chemical Industry

HG 2846-1997 Triazophos technical
HG 3303-1990 Trichlorine Sulfenone Technical Material (the former ZB G25 015-90)
HG/T 3699-2002 Dicofol technical
HG 3296-1989 Aluminum triethylphosphonate technical
HG 3623-1999 Plifenate technical
HG 3293-1989 Triadimefon original drug
HG/T 3293-2017 Triadimefon technical material
HG 3699-2002 Dicofol technical
HG/T 3303-1990 Trichloromite
HG/T 3296-2001 Aluminum triethylphosphonate technical
HG/T 3623-1999 Plifenate technical
HG 3296-2001 Fosetyl - aluminium Technical
HG/T 2846-1997 Triazophos original drug
HG 3293-2001 Triadimefon Technical
HG/T 3293-2001 Triadimefon original drug

Group Standards of the People's Republic of China

T/CCPIA 192-2022 Tricyclazole technical material
T/CAPDA 031-2022 Azocyclotin technical material
T/NAIA 055-2021 Trimethyl orthoformate

Professional Standard - Agriculture

ZB G 25008-1989 Aluminum triethylphosphonate technical
ZB G 25015-1990 Triclosan technical
ZB G 25005-1989 Triadimefon original drug

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

GB/T 12685-2006 Tricyclazole technical

Professional Standard - Machinery

JB/T 5839-1991 KH Series 200A and above Case - Rated Reverse Blocking Triple Pole HT Thyristors

Professional Standard - Speciality

ZB G25005-1989 Triadimefon original drug
ZB G25008-1989 Aluminum triethylphosphonate technical

Jiangxi Provincial Standard of the People's Republic of China

DB36/T 1840-2023 Determination of water quality aldicarb by high performance liquid chromatography-triple quadrupole mass spectrometry

Professional Standard - Aviation

HB 5659-1981 Liquid Electric Switch for Tripolar Glass

Professional Standard - Non-ferrous Metal

YS/T 230.5-1994 High pure indium--Determination of sulphur content

Taiwan Provincial Standard of the People's Republic of China

CNS 419-1982 Air Depolarized Primary Cells

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04020-1989 Specification for verification of sample transistor specially intended to measure the noise factor of high frequency medium and low power triode transistor
JJG(电子) 04022-1989 Specification for verification of Q01 model high frequency low power triode transistor Ft standard measurement meters

农业农村部

NY/T 3597-2020 Fosetyl-aluminium technical material

Fujian Provincial Standard of the People's Republic of China

DB35/ 137-1999 n-triacontanol powder

Hebei Provincial Standard of the People's Republic of China

DB13/ 356-1998 Diflubenzuron No. 3 technical medicine

Professional Standard - Aerospace

QJ 2493-1993 Acceptance specification for microwave diodes and transistors

Association Francaise de Normalisation

NF C64-101:1976 A.C.high-voltage switchgear and control gear. Three-pole circuit-breakers. Characteristics.
NF L72-130:1980 Transmetteurs tachymétriques triphasés bipolaires
NF C64-132:1987 High voltage switchgear - Three-pole switches with a rated voltage of 24 kV intended for operating capacitor bank banks

CZ-CSN

CSN 30 4491-1954 Three-pole wiring board
CSN 65 1055-1981 Aluminium oxide, Determina- oin of zinc oxide. Atomic bsorption, photometric and olarografie methods
CSN 35 4614-1957 Three-pole shielded plug and socket
CSN 35 4615-1961 Screened three-pole socket and plug

SCC

AWWA ACE65117 Reductive Dechlorination of Trichloroethylene Using Boron Doped Diamond Film Electrode
IEC 60265C:1970 Third supplement - High-voltage switches
CEI UNEL 41515:1981 Three-pole hinged switch disconnectors for general indoor use - Voltage up to 36 kV - Rated current up to 630 A - n. 5 tables.
BS PD IEC TS 62344:2022 Design of earth electrode stations for high-voltage direct current (HVDC) links. General guidelines
AWWA SP250179 A First Principles Approach Towards Understanding Concentration Polarization
ASD-STAN PREN 4728:2013 Aerospace series Circuit breakers, single and three poles dummies Product standard

Canadian Standards Association (CSA)

CSA C22.2 NO.160-2015 Voltage and Polarity Testers (Third Edition)

RO-ASRO

STAS 9258-1979 TRIPLE-POLE CHARGE CONNECTORS WITH HIGHBREAKING CAPACITY FUSES Technical requirements for quality

AR-IRAM

IRAM 2156-1960 Three-pole ground plug

International Electrotechnical Commission (IEC)

IEC 60747-6:2000 Semiconductor devices - Part 6: Thyristors

AENOR

UNE 84126:2002 Cosmetic raw materials. 3,4,4'-Trichlorocarbanilide. Determinacion of trichlorocarbanilide content by high performance liquid chromatography (HPLC).
UNE-EN 2592:1992 AEROSPACE SERIES. THREE-POLE CIRCUIT BREAKERS TEMPERATURE COMPENSATED RATED CURRENTS UP TO 25 A. PRODUCT STANDARD.

Aerospace, Security and Defence Industries Association of Europe (ASD)

ASD-STAN PREN 2996-005-2005 Aerospace Series Circuit Breakers, Three-Pole, Temperature Compensated, Rated Current 1 A to 25 A Part 005: With Polarized Signal Contact Product Standard (Edition P 3)

RU-GOST R

GOST 21011.0-1975 High-voltage kenotrons. Methods measurements of electric parameters. General requirements
GOST 8.334-1978 State system for ensuring the uniformity of measurements. Noise figure meters of UHF transistors and receivers. Methods and means of verification

CN-STDBOOK

图书 3-9065 Chemical Industry Standard Compilation of Rubber Raw Materials (3) (Third Edition)

American Gas Association

AGA PPP-2001 Purging Principles and Practice (Third Edition; XK0101)

German Institute for Standardization

DIN 41700-2:1989 Electrical communication engineering; three pole plug
DIN EN 4728:2015-09 Aerospace series - Circuit breakers, single and three poles dummies - Product standard; German and English version EN 4728:2015
DIN EN 2592:1991-03 Aerospace series; three-pole circuit breakers; temperature compensated rated currents up to 25 A; product standard; german version EN 2592:1990

API - American Petroleum Institute

API RP 651-2007 Cathodic Protection of Aboveground Petroleum Storage Tanks (Third Edition)
API RP 651 CHINESE-2007 Cathodic Protection of Aboveground Petroleum Storage Tanks (Third Edition)
API STD 5LX-1951 SPECIFICATION FOR HIGH-TEST LINE PIPE (THIRD EDITION)

Defense Logistics Agency

DLA SMD-5962-90772 REV C-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE THREE-INPUT POSITIVE-AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA A-A-55428 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA SMD-5962-87754 REV B-2011 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, ANALOG MULTIPLEXER/DEMULTIPLEXER, TRIPLE SINGLE POLE, DOUBLE-POSITION, MONOLITHIC SILICON