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Database: 365,228(8 Aug 2026)

crystal generator

crystal generator, Total:342 items.

The international standard classification for "crystal generator" includes: Semiconducting materials , Semiconductor devices , Glass products , Piezoelectric and dielectric devices , Non-metalliferous minerals , Ceramic and glass insulating materials .

The Chinese standard classification for "crystal generator" includes: Elemental semiconductor material , Special electronic technology material , Technical management , Technical management , Semiconductor triode , Industrial technical glass , Quartz crystal and piezoelectric element , Artificial lens , Special ceramics , Extracorporeal circulation, artificial organ and prosthesis device .


国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit

Group Standards of the People's Republic of China

Professional Standard - Electron

  • SJ/Z 9014.3-1987 Semiconductor components - Discrete components and integrated circuits Part 6 Thyristors
  • SJ 50597/53-2000 Semiconductor integrated circuits - Detail specification for Type JB3081、JB3082 transistor arrays
  • SJ 1852-1981 Terms for quartz crystal controlled oscillators
  • SJ/Z 9155.2-1987 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators
  • SJ 51648/2-1994 Oscillator,crystal Type ZD509,detail specification for
  • SJ 51648/1-1994 Oscillator crystal Type ZF507,detail specification for
  • SJ/T 10638-1995 Measurement methods for quartz crystal oscillators
  • SJ 51648.4-1995 Oscillator,crystal,type ZC505E,detail specification for

Taiwan Provincial Standard of the People's Republic of China

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB 12274-1990 Quartz orystal controlled oscillators-Generic specification
  • GB/T 31958-2023 Substrate glass for amorphous silicon thin film transistor liquid crystal display device
  • GB/T 4291-2017(英文版) Synthetic cryolite
  • GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors
  • GB/T 31958-2015 Substrate glass for thin film transistor liquid crystal display device
  • GB 51136-2015 Code for design of thin film transistor liquid crystal display plant

Professional Standard - Building Materials

  • JC/T 2349-2015 Si3N4 ceramic insulation components for polycrystalline silicon production
  • JC/T 817-2014 Gem grade synthetic cubic zirconia crystals

National Metrological Verification Regulations of the People's Republic of China

  • JJG(电子) 15003-1988 3280 type radio frequency crystal marker signal generator trial verification regulations

Military Standard of the People's Republic of China-General Armament Department

Professional Standard - Urban Construction

  • GB 51432-2020 Design Standards for Glass Substrate Production Plants of Thin Film Transistor Display Devices

Professional Standard - Chemical Industry

  • HG/T 4357-2012 Polarizer for the Thin Film Transistor -Liquid Crystal Display (TFT-LCD)

Professional Standard - Medicine

未注明发布机构

  • DIN IEC 679-2:1997 Quartz crystal controlled oscillators; Part 2; Guide to the use of quartz crystal controlled oscillators

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

  • GB/T 22319.9-2018 Measurement of quartz crystal unit parameters—Part 9:Measurement of spurious resonances of piezoelectric crystal units

Defense Logistics Agency

SCC

  • IEC 60758:1983 Synthetic quartz crystal - Chapter I: Specification for synthetic quartz crystal - Chapter II: Guide to the use of synthetic quartz crystal
  • IEC 60758:1983/AMD1:1983 Amendment 1 - Synthetic quartz crystal - Chapter I: Specification for synthetic quartz crystal - Chapter II: Guide to the use of synthetic quartz crystal
  • BS IEC 60747-7:2000 Discrete semiconductor devices and integrated circuits-Bipolar transistors
  • CEI EN 60758:2017 Synthetic quartz crystal - Specifications and guidelines for use
  • BS 2271-3:1965 Specification for quartz oscillator crystal units-Guide to the use of quartz oscillator crystals
  • DANSK DS/EN 60758:2016 Synthetic quartz crystal – Specifications and guidelines for use
  • MIL MIL-S-19500/530-1979 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
  • MIL MIL-S-19500/529-1978 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904
  • MIL MIL-PRF-55310/33-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHZ THROUGH 85 MHZ, HERMETIC SEAL, CMOS
  • MIL MIL-PRF-55310/33D-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 85 MHz, Hermetic Seal, CMOS
  • MIL MIL-PRF-55310/37C-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 85 MHz, Hermetic Seal, CMOS
  • MIL MIL-PRF-55310/37B-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 85 MHz, Hermetic Seal, CMOS
  • MIL MIL-PRF-55310/37A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 85 MHz, Hermetic Seal, CMOS
  • MIL MIL-PRF-55310/33B-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 85 MHz, Hermetic Seal, CMOS
  • MIL MIL-PRF-55310/37-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 500 KHZ THROUGH 85 MHZ, HERMETIC SEAL, CMOS
  • MIL MIL-S-19500/288-1964 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
  • MIL MIL-S-19500/289-1964 Semiconductor Device, Transistor, PNP, Silicon Type 2N2378
  • IEC 60122-2:1962 Quartz crystal units for oscillators - Part 2: Guide to the use of quartz oscillator crystals
  • MIL MIL-PRF-55310/34-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHZ THROUGH 150 MHZ, HERMETIC SEAL, CMOS
  • BS IEC 60747-4-2:2000 Semiconductor devices. Discrete devices-Microwave diodes and transistors. Integrated-circuit microwave amplifiers. Blank detail specification
  • MIL MIL-PRF-55310/33C-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 85 MHz, Hermetic Seal, CMOS
  • DANSK DS/EN IEC 60122-4:2019 Quartz crystal units of assessed quality – Part 4: Crystal units with thermistors
  • BS IEC 60747-4-1:2000 Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
  • MIL MIL-PRF-55310/21F-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ Through 60.0 MHZ, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/41-2018 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHz THROUGH 125 MHz, HERMETIC SEAL, LOW VOLTAGE CMOS
  • MIL MIL-PRF-55310/16K-2017 Oscillator, Crystal Controlled, TYPE 1 (Crystal Oscillator (XO)), 0.1 HZ Through 80 MHZ, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/15G-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.01 Hz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
  • MIL MIL-PRF-55310/38B-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 150 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/38A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 150 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/20F-2012 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 40.0 KHz through 60.0 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/30E-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 450 KHz Through 100 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/38-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 500 KHZ THROUGH 150 MHZ, HERMETIC SEAL, LOW VOLTAGE CMOS
  • MIL MIL-PRF-55310/11G-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.05 MHz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
  • MIL MIL-PRF-55310/13J-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 300 Hz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
  • MIL MIL-PRF-55310/34D-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 150 MHz, Hermetic Seal, Low Voltage CMOS
  • CEI EN IEC 60122-4:2019 Quartz crystal units of assessed quality Part 4: Crystal units with thermistors
  • MIL MIL-PRF-55310/19E-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 60.0 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/18F-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.01 Hz Through 15.0 MHz, Hermetic Seal, Square Wave, CMOS
  • MIL MIL-PRF-55310/8J-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 50 Hz Through 50 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/28D-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 85 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/10J-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 kHz Through 60 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/30C-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 450 KHZ through 100 MHZ, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/34C-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 150 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/38C-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 150 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/21H-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ Through 60.0 MHZ, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/26D-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 10kHz Through 65 MHz, Hermetic Seal, Square Wave, High Speed CMOS
  • MIL MIL-PRF-55310/34B-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 500 KHz Through 150 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/29C-2011 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.2 MHz Through 85 MHz, Hermetic Seal, Square Wave, HCMOS
  • MIL MIL-PRF-55310/21G-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ Through 60.0 MHZ, Hermetic Seal, Square Wave, TTL
  • MIL MIL-S-19500/303-1964 Semiconductor Device, Transistor, Types 2N2631 and 2N2876
  • MIL MIL-PRF-55310/39-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHZ THROUGH 133 MHZ, HERMETIC SEAL, LOW VOLTAGE 2.5V CMOS
  • MIL MIL-PRF-55310/35A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz through 133 MHz, Hermetic Seal, Low Voltage 2.5V CMOS
  • MIL MIL-PRF-55310/36A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz through 100 MHz, Hermetic Seal, Low Voltage 1.8V CMOS
  • MIL MIL-PRF-55310/12H-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.05 MHz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
  • MIL MIL-PRF-55310/9J-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 400 kHz Through 60 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/13H-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 300 Hz Through 10 MHz, Hermetic Seal, Square Wave, CMOS
  • MIL MIL-PRF-55310/30D-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 450 KHz Through 100 MHz, Hermetic Seal, Low Voltage CMOS
  • MIL MIL-PRF-55310/16J-2008 Oscillator, Crystal Controlled, TYPE 1 (Crystal Oscillator (XO)), 0.1 HZ Through 80 MHZ, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/28C-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 85 MHz, Hermetic Seal, Square Wave, TTL
  • MIL MIL-PRF-55310/14H-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.1 Hz Through 25 MHz, Hermetic Seal, Square Wave, TTL
  • DIN VDE 0556:1966 Regulations for polycrystal semiconductor-rectifiers
  • MIL MIL-PRF-55310/39A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz Through 133 MHz, Hermetic Seal, Low Voltage 2.5V CMOS
  • IEC 60458:1974 Transistorized ballasts for fluorescent lamps
  • MIL MIL-PRF-55310/40C-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz Through 100 MHz, Hermetic Seal, Low Voltage 1.8V CMOS
  • MIL MIL-PRF-55310/36C-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz through 100 MHz, Hermetic Seal, Low Voltage 1.8V CMOS
  • BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits-Field-effect transistors-Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
  • MIL MIL-PRF-55310/36-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHZ THROUGH 100 MHZ, HERMETIC SEAL, LOW VOLTAGE 1.8V CMOS
  • MIL MIL-PRF-55310/39C-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz Through 133 MHz, Hermetic Seal, Low Voltage 2.5V CMOS
  • MIL MIL-PRF-55310/35B-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz through 133 MHz, Hermetic Seal, Low Voltage 2.5V CMOS
  • MIL MIL-PRF-55310/40A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz Through 100 MHz, Hermetic Seal, Low Voltage 1.8V CMOS
  • MIL MIL-PRF-55310/39B-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz Through 133 MHz, Hermetic Seal, Low Voltage 2.5V CMOS
  • MIL MIL-PRF-55310/40B-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz Through 100 MHz, Hermetic Seal, Low Voltage 1.8V CMOS
  • MIL MIL-PRF-55310/35C-2018 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz through 133 MHz, Hermetic Seal, Low Voltage 2.5V CMOS
  • BS 6493-1.7:1989 Semiconductor devices. Discrete devices-Recommendations for bipolar transistors
  • MIL MIL-PRF-55310/35-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHZ THROUGH 133 MHZ, HERMETIC SEAL, LOW VOLTAGE 2.5V CMOS
  • MIL MIL-PRF-55310/36B-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1 MHz through 100 MHz, Hermetic Seal, Low Voltage 1.8V CMOS
  • MIL MIL-PRF-55310/40-2007 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1 MHZ THROUGH 100 MHZ, HERMETIC SEAL, LOW VOLTAGE 1.8V CMOS
  • DANSK DS/EN 60444-9:2007 Measurement of quartz crystal unit parameters -- Part 9: Measurement of spurious resonances of piezoelectric crystal units
  • MIL MIL-PRF-55310/27E-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz through 85 MHz, Hermetic Seal, Square Wave, High Speed CMOS
  • MIL MIL-PRF-55310/27C-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHZ through 85 MHZ, Hermetic Seal, Square Wave, High Speed CMOS
  • MIL MIL-PRF-55310/32B-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.544 MHz through 125 MHz, Hermetic Seal, Square Wave, Advanced CMOS
  • MIL MIL-PRF-55310/31-2006 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.75 MHZ THROUGH 200 MHZ, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
  • 07/30161553 DC BS EN 60758. Synthetic quartz crystal. Specifications and guide to the use
  • MIL MIL-PRF-55310/17F-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), Gated, 250 kHz Through 50 MHz, Hermetic Seal, Square Wave, TTL
  • IEC 60122-2:1962/AMD1:1969 Amendment 1 - Quartz crystal units for oscillators - Part 2: Guide to the use of quartz oscillator crystals
  • BS IEC 60747-9:1998 Semiconductor devices. Discrete devices-Insulated-gate bipolar transistors (IGBTs)
  • MIL MIL-PRF-55310/32C-2017 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.544 MHz through 125 MHz, Hermetic Seal, Square Wave, Advanced CMOS
  • MIL MIL-PRF-55310/31A-2010 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 0.75 MHz Through 200 MHz, Hermetic Seal, Square Wave, Advanced CMOS
  • MIL MIL-PRF-55310/32-2006 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.544 MHZ THROUGH 125 MHZ, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
  • MIL MIL-PRF-55310/27D-2008 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz through 85 MHz, Hermetic Seal, Square Wave, High Speed CMOS
  • BS EN ISO 11979-10:2006+A1:2014 Ophthalmic implants. Intraocular lenses-Phakic intraocular lenses
  • 13/30280840 DC BS EN 60758. Synthetic quart crystal. Specifications and guidelines for the use
  • BS 6493-1.8:1985 Semiconductor devices. Discrete devices-Recommendations for field-effect transistors
  • UNE 20541-1:1974 SUPPLY VOLTAGES FOR TRANSISTORIZED NUCLEAR INSTRUMENTS
  • CEI EN 60444-9:2009 Measurement of quartz crystal unit parameters Part 9: Measurement of spurious resonances of piezoelectric crystal units

Japanese Industrial Standards Committee (JISC)

Korean Agency for Technology and Standards (KATS)

British Standards Institution (BSI)

  • BS IEC 60747-7:2001 Discrete semiconductor devices and integrated circuits - Bipolar transistors
  • BS EN 60444-9:2007 Measurement of quartz crystal unit parameters - Measurement of spurious resonances of piezoelectric crystal units
  • BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
  • BS EN 60758:2016 Synthetic quartz crystal. Specifications and guidelines for use
  • BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
  • BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors
  • BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
  • BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
  • BS IEC 60747-4:2007+A1:2017 Semiconductor devices. Discrete devices - Microwave diodes and transistors
  • BS EN ISO 11979-5:2020 Ophthalmic implants. Intraocular lenses - Biocompatibility
  • BS IEC 60747-9:2019 Semiconductor devices - Discrete devices. Insulated-gate bipolar transistors (IGBTs)

Association Francaise de Normalisation

  • NF C96-007:1989 Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors.
  • NF C96-008:1985 Semiconductor devices. Discrete devices and integrated circuits. Part 8 : field-effect transistors.
  • NF C96-006:1984 Electronic components. Semiconductor devices. Discrete devices and integrated circuits. Part 6 : thyristors.
  • NF C93-632*NF EN 60758:2018 Synthetic quartz crystal - Specifications and guidelines for use
  • NF EN 60758:2018 Synthetic Quartz Crystal – Specifications and Usage Guidelines
  • XP F61-031:1996 Railway rolling stock. Connectors for transistorized ballast.
  • NF C93-621-9*NF EN 60444-9:2014 Measurement of quartz crystal unit parameters - Part 9 : measurement of spurious resonances of piezoelectric crystal units

IN-BIS

U.S. Military Regulations and Norms

HU-MSZT

TR-TSE

SAE - SAE International

Society of Automotive Engineers (SAE)

International Electrotechnical Commission (IEC)

  • IEC 60679-2:1981 Quartz crystal controlled oscillators. Part 2 : Guide to the use of quartz crystal controlled oscillators
  • IEC 60758:2016 Synthetic quartz crystal - Specifications and guidelines for use
  • IEC 60747-7/AMD1:1991 Semiconductor discrete devices and integrated circuits; part 7: bipolar transistors; amendment 1
  • IEC 60758:2008 Synthetic quartz crystal - Specifications and guidelines for use
  • IEC 60747-7/AMD2:1994 Semiconductor discrete devices and integrated circuits - Part 7: Bipolar transistors; Amendment 2
  • IEC 60444-9:2007 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units
  • IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-7:2010/AMD1:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

CZ-CSN

German Institute for Standardization

  • DIN EN 60758:2017-04 Synthetic quartz crystal - Specifications and guidelines for use (IEC 60758:2016); German version EN 60758:2016 / Note: DIN EN 60758 (2009-05) remains valid alongside this standard until 2019-10-07.
  • DIN IEC 60679-2:1997 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators (IEC 60679-2:1981)
  • DIN EN 60444-9:2007-12 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units (IEC 60444-9:2007); German version EN 60444-9:2007

European Committee for Electrotechnical Standardization(CENELEC)

  • EN 60758:2016 Synthetic quartz crystal - Specifications and guidelines for use
  • EN 60758:2009 Synthetic quartz crystal - Specifications and guidelines for use
  • EN 60444-9:2007 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units
  • HD 302-1975 Transistorized Ballast for Fluorescent Lamps

Danish Standards Foundation

  • DS/EN 60758:2009 Synthetic quartz crystal - Specifications and guidelines for use
  • DS/IEC 122-2-1:1993 Quartz crystal units for frequency control and selection. Part 2: Guide to the use of quartz crystal units for frequency control and selection. Section one: Quartz crystal units for microprocessor clock supply
  • DS/IEC 458:1981 Transistorized ballasts for tubular fluorescent lamps

CENELEC - European Committee for Electrotechnical Standardization

  • EN 60758:2005 Synthetic quartz crystal Specifications and guide to the use

KR-KS

GSO

ES-UNE

  • UNE-EN 60758:2016 Synthetic Quartz Crystal - Specifications and guidelines for use (Endorsed by AENOR in November of 2016.)

Aerospace Industries Association

SE-SIS

European Committee for Standardization (CEN)

Aerospace Industries Association/ANSI Aerospace Standards

RO-ASRO

  • STAS 7128/9-1980 SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Letter symbols for unijonction transistors

American National Standards Institute (ANSI)

Lithuanian Standards Office

  • LST EN 60758-2009 Synthetic quartz crystal - Specifications and guidelines for use (IEC 60758:2008)

Association of German Mechanical Engineers

United States Navy