ph field effect transistor electrodes

ph field effect transistor electrodes, Total:54 items.

The international standard classification for "ph field effect transistor electrodes" includes: Transistors , Other semiconductor devices .

The Chinese standard classification for "ph field effect transistor electrodes" includes: Semiconductor diode , Field effect device .

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors

QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET)

GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 17466-1980 Transistors bipolar and field-effect. Basic parameters
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
GOST 20398.10-1980 Field-effect transistors. Drain current for Vgs=0 impulse measurement technique
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.0-1983 Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 20398.7-1974 Field-effect transistors. Threshold and cut-off voltage measurement technique
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique

DIN 55659-2:2012 Paints and varnishes - Determination of pH value - Part 2: pH-electrodes with ISFET technology

JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
JUS N.R1.390-1979 Bipolar tnmmton. Etsential ratings and chancteristics: bw-power signal transistors
JUS N.R1.373-1980 Semiconductor ?iodes. Essentialratings and characteristics. Low-power signaldiodes
JUS N.R1.391-1979 Bvpolar transistors. Essential ratings and characteristics: power transistors
JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods

BS IEC 60747-4-1:2000 Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
BS QC 750112:1988 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up ...
BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits-Field-effect transistors-Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.

DLA SMD-5962-01504 REV D-2011 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-81023 REV L-2006 MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA SMD-5962-01503 REV C-2013 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-90633 REV A-2006 MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89659-1990 MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID

TIS 2122-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz

CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods

PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
PN T01505 ArkusZ11-1974 Field-effect ?ransis?ors Measuring method Drain-source breakdown yol?age U
PN T01505 ArkusZ01-1974 Field-effec? transistors Measuring me?hod Gate-source cut-o?f yol?aoe Ugs (Offi
PN T01505 ArkusZ10-1974 Field-effecl transistors Measuring method Ga?e-source breakdown voltage U(8R) GSS

KS C 5202-1980(2000) RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C 5202-2004 RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C IEC 60747-8:2002 Discrete devices－Part 8：Field－effect transistors
KS C IEC 60747-4-1-2020 Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
KS C IEC 60747-4-1-2002(2017) Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification

BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors

MICROW FLD-EFFE TRANSIS-1994 Microwave Field-Effect Transistors: Theory@ design and applications

IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
IEC 60747-4-1:2000 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification

NF C86-712:1981 Harmonized system of quality assessment for electronic components. Blank detail specification. Single gate field-effect transistors.

STAS 12389-1985 FIELD-EFFECT TRANSISTORS Limiting values and basic electrical parameters nomenclature

QC 750112-1987 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors@ up to 5W and 1 GHz (IEC 747-8-1 ED 1)