High frequency microelectrode

High frequency microelectrode, Total:359 items.

The international standard classification for "High frequency microelectrode" includes: Aerospace electric equipment and systems , Diodes , Rubber , Insulating fluids , Conducting materials .

The Chinese standard classification for "High frequency microelectrode" includes: Electronic components , Technical management , Technical management , Radio Measurement , Semiconductor diode , Rubber products in general , Graphite material .

Group Standards of the People's Republic of China

T/ZZB 0542-2018 Disposable high frequency active electrode surgical instrument (active electrode is intended to coagulate or cut )

Taiwan Provincial Standard of the People's Republic of China

CNS 7013-1981 Measurement of Small Signal HF VHF, and UHF Power Gain of Transistors

Professional Standard - Aerospace

QJ 1299-1987 Specification for Screening of Silicon Microwave Mixer and Detector Diodes

Professional Standard - Electron

SJ 3123-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG1779
SJ 796-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG160
SJ 790-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG121
SJ 783-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG101
SJ 800-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG180
SJ 2372-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD259 and 3CD260
SJ 1482-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG132
SJ 799-1974 Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors,Type 3DG170
SJ 1421-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA22
SJ 1408-1978 Detail specification for silicon NPN high frequency high power transistors,Type 3DA101
SJ 2369-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD253,3CD254 and 3CD453
SJ 1428-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA107
SJ 1682-1980 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA151
SJ 3121-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG2464
SJ 2373-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD262 and 3CD462
SJ 784-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG102
SJ 935-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD101 and 3DD102
SJ 1470-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG102
SJ 2371-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD257,3CD258 and 3CD457
SJ 1426-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA21
SJ 2279-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG123
SJ 3122-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG3177
SJ 1423-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA32
SJ 3120-1988 Detail specification for electronic component--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG1215
SJ 2273-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG81
SJ 1481-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG131
SJ 934-1975 Detail specification for silicon NPN low frequency high power high reversse voltage transistors,Type 3DD100
SJ 1422-1978 Detail specificaiton for silicon NPN high-frequency high power transistors,Type 3DA37
SJ 2366-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD447
SJ 2276-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG114
SJ 1407-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA4
SJ 1471-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG103
SJ 1419-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA18
SJ 1472-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG110
SJ 1484-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG160
SJ 1414-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA102
SJ 1416-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA100
SJ 1430-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA89
SJ/T 11759-2020 Test method for determining the aspect ratio of solar cell's grid line electrode-confocal laser scanning microscope
SJ 1479-1979 Detail specifiation for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG122
SJ 1424-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA105
SJ 1410-1978 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA98
SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
SJ 2281-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG132
SJ 1405-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA1
SJ 1420-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA104
SJ 787-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG111
SJ 1406-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA96
SJ 1429-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA108
SJ 1418-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA10
SJ 2367-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD249,3CD250 and 3CD449
SJ 1476-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG114
SJ 2368-1983 Detail specification for silicon PNP low frequncy high voltage high power transistors,Type 3CD251,3CD252 and 3CD451
SJ 1468-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG100
SJ 1425-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA106
SJ 2278-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG72
SJ 791-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG122
SJ 782-1974 Detail specfication for silicon NPN planar high frequency low power transistors,Type 3DG100
SJ 1417-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA103
SJ 2271-1983 Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes
SJ 2370-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD255,3CD256 and 3CD455
SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD267 and 3CD467
SJ 1415-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA28
SJ 50033/28-1994 Semiconductor discrete device-Detail specification for stripline mixer diodes for 2CV334,2CV3338
SJ 1478-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG121
SJ 785-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG103
SJ 1427-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA92
SJ 1469-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG101
SJ 2275-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG85
SJ 1473-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG111
SJ 2374-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD264,3CD464
SJ 1485-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG170
SJ 2277-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG115
SJ 936-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD103 and 3DD104
SJ 1412-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA14
SJ 1486-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180
SJ 797-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
SJ 801-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG181
SJ 1413-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA2
SJ 786-1974 Detail specification for silicon NPN planar high frequency low power transistors,Type 3DG110
SJ 1409-1978 Detail specification for silicon NPN high-frequency high pwer transistors,Type 3DA3
SJ 2274-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG113
SJ 1683-1980 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA152
SJ 1480-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130
SJ 788-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG112
SJ 1411-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA5
SJ 1431-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA39
SJ 789-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG120
SJ 1475-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG113
SJ 2272-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG44
SJ 1474-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG112
SJ 1477-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG120

National Metrological Verification Regulations of the People's Republic of China

JJG 362-1984 for Model DO16 UHF Microvolt Voltage Calibrating Equipment
JJG 279-1981 Verification Regulation of HE Microvoltmeter Type WFG-1B
JJG 319-1983 Verification Regulation of VHF Microvolt Meter

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 3073-1982 High power graphite electrodes
GB/T 3789.18-1991 Measurements of the electrical properties of transmitting tubes-Measuring methods of high frequency loss for interelectrode insulators
GB/T 1694-1981 Vulcanized rubber--Test method for HF dielectric constant and dielectric loss angular tangent value
GB/T 15177-1994 Blank detail specification for mircowave detectors and mixer diodes

Military Standard of the People's Republic of China-General Armament Department

GJB 7052-2010 Methods of measure the frequency and spectrum characteristics of short high power microwave pulse

Professional Standard - Ferrous Metallurgy

YB/T 4089-2015 High power graphite electrode
YB/T 4089-2000 High power graphite electrode
YB/T 4090-2015 Ultra high power graphite electrode
YB/T 4090-2000 Ultra high power graphite electrode

Defense Logistics Agency

DLA SMD-5962-94562 REV A-2009 MICROCIRCUIT, LINEAR, HIGH FREQUENCY VIDEO SWITCH, MONOLITHIC SILICON
DLA SMD-5962-89972 REV D-2009 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, HIGH VOLTAGE, VIDEO AMPLIFIER
DLA SMD-5962-93246 REV E-2013 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, HIGH VOLTAGE, VIDEO AMPLIFIER
DLA SMD-5962-88605 REV B-2001 MICROCIRCUIT, DIGITAL, BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER, MONOLITHIC SILICON
DLA SMD-5962-93243 REV D-2009 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, HIGH VOLTAGE, VIDEO AMPLIFIER
DLA SMD-5962-94562-1994 MICROCIRCUIT, LINEAR, HIGH FREQUENCY VIDEO SWITCH, MONOLITHIC SILICON
DLA SMD-5962-86728 REV B-2011 MICROCIRCUIT, DIGITAL, BIPOLAR, HIGH SPEED REGISTER, MONOLITHIC SILICON
DLA SMD-5962-93243 REV C-2001 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, HIGH VOLTAGE, VIDEO AMPLIFIER
DLA SMD-5962-89972 REV C-2001 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, HIGH VOLTAGE, VIDEO AMPLIFIER
DLA SMD-5962-93246 REV D-2005 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, HIGH VOLTAGE, VIDEO AMPLIFIER
DLA SMD-5962-78019 REV E-2006 MICROCIRCUIT, LINEAR, DUAL, HIGH SPEED, VOLTAGE COMPARATOR, MONOLITHIC SILICON
DLA MIL-M-38510/22 D VALID NOTICE 1-2010 Microcircuits, Digital, Bipolar, High-Speed TTL, Flip-Flops, Monolithic Silicon
DLA SMD-5962-94603 REV A-2009 MICROCIRCUIT, LINEAR, HIGH OUTPUT CURRENT, HIGH FREQUENCY CURRENT FEEDBACK AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90979 REV B-2008 MICROCIRCUIT, LINEAR, HIGH SPEED PHASE / FREQUENCY DISCRIMINATOR, MONOLITHIC SILICON
DLA SMD-5962-94749 REV B-2001 MICROCIRCUIT, LINEAR, ULTRA HIGH FREQUENCY ALL NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
DLA MIL-M-38510/333 C VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nor Gates, Monolithic Silicon
DLA MIL-M-38510/333 C VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nor Gates, Monolithic Silicon
DLA SMD-5962-94603-1994 MICROCIRCUIT, LINEAR, HIGH OUTPUT CURRENT, HIGH FREQUENCY CURRENT FEEDBACK AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-88605 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER, MONOLITHIC SILICON
DLA MIL-M-38510/337 B VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Decoders, Monolithic Silicon
DLA SMD-5962-86728 REV A-2005 MICROCIRCUITS, DIGITAL, BIPOLAR, HIGH SPEED REGISTER, MONOLITHIC SILICON
DLA MIL-M-38510/330 C VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Gates, Monolithic Silicon
DLA SMD-5962-01507 REV A-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, HIGH-SPEED LOOK-AHEAD CARRY GENERATOR, MONOLITHIC SILICON
DLA MIL-M-38510/337 B VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Decoders, Monolithic Silicon
DLA MIL-M-38510/330 C VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Gates, Monolithic Silicon
DLA MIL-PRF-39003/9 F-2009 CAPACITOR, FIXED, ELECTROLYTIC (SOLID ELECTROLYTE), TANTALUM (POLARIZED, SINTERED SLUG), HIGH FREQUENCY, ESTABLISHED RELIABILITY, STYLE CSR21
DLA MIL-M-38510/345 C VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Exclusive or Gates, Monolithic Silicon
DLA SMD-5962-91761 REV A-2008 MICROCIRCUIT, DIGITAL, ECL, TWO MODULUS DIVIDER, 200 MHz ?10/11, MONOLITHIC SILICON
DLA SMD-5962-87794 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, NOR DRIVER, MONOLITHIC SILICON
DLA A-A-59700 A-2008 COIL, RF, CHIP, FIXED, HIGH FREQUENCY, MINIATURE, SURFACE MOUNT
DLA MIL-M-38510/345 C VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Exclusive or Gates, Monolithic Silicon
DLA SMD-5962-86863-1987 MICROCIRCUITS, DIGITAL, BIPOLAR, 16-BIT MICROPROCESSOR
DLA MIL-M-38510/349 B VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Parity Checker, Monolithic Silicon
DLA SMD-5962-88752 REV D-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, HEX INVERTER, MONOLITHIC SILICON
DLA MIL-M-38510/334 C VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, and-or-Invert Gates, Monolithic Silicon
DLA SMD-5962-86064 REV C-2006 MICROCIRCUITS, LINEAR, ULTRA HIGH-FREQUENCY OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-M-38510/349 B VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Parity Checker, Monolithic Silicon
DLA SMD-5962-87595 REV C-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-88731 REV B-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, HEX DRIVERS, MONOLITHIC SILICON
DLA MIL-M-38510/332 C VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Octal Buffers, Monolithic Silicon
DLA SMD-5962-86836 REV D-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, OR GATES, MONOLITHIC SILICON
DLA MIL-M-38510/334 C VALID NOTICE 1-2008 MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVERT GATES, MONOLITHIC SILICON
DLA MIL-DTL-10392 E-2008 Cord, Electrical (Audio, Miniature)
DLA SMD-5962-88707 REV D-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, PI-BUS TRANSCEIVER, MONOLITHIC SILICON
DLA MIL-M-38510/375 A VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Low Power-Schottky TTL, or Gates, Monolithic Silicon
DLA MIL-M-38510/332 C VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Octal Buffers, Monolithic Silicon
DLA SMD-5962-88709 REV A-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 2-INPUT NOR GATES, MONOLITHIC SILICON
DLA SMD-5962-94670 REV A-2009 MICROCIRCUIT, LINEAR, HIGH SPEED, VIDEO, 8-BIT, D/A CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-86838 REV D-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
DLA SMD-5962-86840 REV F-2011 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, COUNTER, MONOLITHIC SILICON
DLA SMD-5962-88555 REV D-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, D-TYPE REGISTER, MONOLITHIC SILICON
DLA MIL-M-38510/341 F VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced, Schottky TTL, Flip-Flops, Cascadable, Monolithic Silicon
DLA SMD-5962-86866 REV D-2013 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, DECODER, MONOLITHIC SILICON
DLA MIL-M-38510/343 B VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Binary Counters, Monolithic Silicon
DLA SMD-5962-88589 REV D-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, POSITIVE NAND GATE, MONOLITHIC SILICON
DLA MIL-M-38510/338 B VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Arithmetic Logic Units,Monolithic Silicon
DLA SMD-5962-89438 REV B-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 10-NONINVERTING REGISTER, MONOLITHIC SILICON
DLA SMD-5962-86865 REV E-2013 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-89558 REV B-2012 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, TRANSCEIVERS/REGISTERS, MONOLITHIC SILICON
DLA MIL-M-38510/344 A VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Decade Counters, Monolithic Silicon
DLA SMD-5962-88712 REV A-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, 8-BIT IDENTITY COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-86844 REV E-2013 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
DLA MIL-M-38510/343 B VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Binary Counters, Monolithic Silicon
DLA SMD-5962-88774 REV C-2011 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL AND-OR-INVERT GATE, MONOLITHIC SILICON
DLA MIL-M-38510/344 A VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Decade Counters, Monolithic Silicon
DLA MIL-M-38510/341 F VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced, Schottky TTL, Flip-Flops, Cascadable, Monolithic Silicon
DLA SMD-5962-01507-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, HIGH-SPEED LOOK-AHEAD CARRY GENERATOR, MONOLITHIC SILICON
DLA SMD-5962-94566 REV B-2008 MICROCIRCUIT, LINEAR, HIGH SPEED VIDEO OPERATIONAL AMPLIFIER WITH DISABLE, MONOLITHIC SILICON
DLA SMD-5962-97641 REV B-2005 MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENCY, ALL NPN TRANSISTOR ARRAY, MONOLITHIC SILICON
DLA SMD-5962-88522 REV B-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 2-INPUT AND DRIVERS MONOLITHIC SILICON
DLA MIL-M-38510/347 A VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, 8-Bit Identity Comparator, Monolithic Silicon
DLA MIL-PRF-1/1470 E-2009 ELECTRON TUBE, MICROWAVE (NEGATIVE GRID) TYPE 7698
DLA MIL-PRF-1/1657 E-2009 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 8727
DLA MIL-PRF-1/1633 B VALID NOTICE 1-2009 Electron Tube, Negative Grid (Microwave) Type 7211
DLA MIL-PRF-1/484 E-2008 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 6299
DLA SMD-5962-99536 REV F-2011 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, HIGH FREQUENCY HALF BRIDGE DRIVER, MONOLITHIC SILICON
DLA SMD-5962-99536 REV G-2011 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, HIGH FREQUENCY HALF BRIDGE DRIVER, MONOLITHIC SILICON
DLA DSCC-VID-V62/03658 REV A-2009 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE OR GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-97636 REV A-2007 MICROCIRCUIT, DIGITAL, BIPOLAR, DUAL 4-INPUT NOR GATES WITH STROBE, MONOLITHIC silicon
DLA SMD-5962-83022 REV J-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, COUNTERS, MONOLITHIC SILICON
DLA SMD-5962-84154 REV D-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, REGISTER, MONOLITHIC SILICON
DLA MIL-M-38510/335 C VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Quadruple, 2 Input or Gates, Monolithic Silicon
DLA MIL-M-38510/347 A VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, 8-Bit Identity Comparator, Monolithic Silicon
DLA MIL-PRF-1/1335 H NOTICE 1-2012 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 7462
DLA MIL-M-38510/335 C VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar Advanced Schottky TTL, Quadruple, 2 Input or Gates, Monolithic Silicon
DLA SMD-5962-84013 REV F-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
DLA MIL-PRF-1/1429 J VALID NOTICE 1-2011 Electron Tube, Negative Grid (Microwave) Type 7815
DLA SMD-5962-89553 REV B-2012 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, OCTAL BUS TRANSCEIVERS, MONOLITHIC SILICON
DLA SMD-5962-88710 REV A-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 8-BIT IDENTITY COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-88718 REV C-2013 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, HEX INVERTER WITH OPEN-DRAIN OUTPUTS, MONOLITHIC SILICON
DLA MIL-PRF-1/868 F-2008 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 2C40A
DLA MIL-PRF-1/1330 G NOTICE 1-2012 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 7486
DLA MIL-PRF-1/1203 K NOTICE 2-2012 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 7077
DLA MIL-M-38510/336 B VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Shift Registers, Cascadable, Monolithic Silicon
DLA SMD-5962-89555 REV C-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL REGISTERED TRANSCEIVERS, MONOLITHIC SILICON
DLA SMD-5962-05219 REV C-2008 MICROCIRCUIT, HYBRID, DUAL VOLTAGE REGULATOR, POSTIVE AND NEGATIVE, ADJUSTABLE
DLA DSCC-VID-V62/06609-2006 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-09206 REV A-2012 MICROCIRCUIT, HYBRID, VOLTAGE REGULATOR, POSTIVE AND NEGATIVE, ADJUSTABLE
DLA SMD-5962-89525 REV C-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BUS INTERFACE FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-09206-2009 MICROCIRCUIT, HYBRID, VOLTAGE REGULATOR, POSTIVE AND NEGATIVE, ADJUSTABLE
DLA SMD-5962-05219 REV D-2011 MICROCIRCUIT, HYBRID, DUAL VOLTAGE REGULATOR, POSTIVE AND NEGATIVE, ADJUSTABLE
DLA SMD-5962-94694 REV C-2009 MICROCIRCUIT, LINEAR, WIDEBAND, HIGH SLEW RATE, VIDEO OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-87787 REV B-2007 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, WIDEBAND, HIGH SLEW RATE, MONOLITHIC SILICON
DLA SMD-5962-88598 REV A-1990 MICROCIRCUITS, DIGITAL, BIPOLAR CLOCK GENERATOR/MICROCYCLE LENGTH CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-84145 REV D-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, OR DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-88627 REV C-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 8-BIT BINARY COUNTER, MONOLITHIC SILICON
DLA MIL-M-38510/336 B VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Shift Registers, Cascadable, Monolithic Silicon
DLA SMD-5962-78017 REV G-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, MICROPROGRAM CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-88556 REV B-2011 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, ANALOG MULTIPLEXER/DEMULTIPLEXER, DOUBLE-POLE FOUR POSITION, MONOLITHIC SILICON
DLA SMD-5962-84000 REV D-2005 MICROCIRCUITS, DIGITAL, ADVANCED LOWPOWER SCHOTTKY TTL, J-K FLIP-FLOPS, MONOLITHIC SILICON
DLA SMD-5962-88677 REV C-2009 MICROCIRCUIT, DIGITAL, 4-BIT BIPOLAR MICROPROCESSOR SLICE, MONOLITHIC SILICON
DLA SMD-5962-84030 REV E-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS, MONOLITHIC SILICON
DLA SMD-5962-84012 REV G-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, TRANSPARENT LATCHES, MONOLITHIC SILICON
DLA SMD-5962-85126 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUFFERS, MONOLITHIC SILICON
DLA SMD-5962-95671 REV B-2006 MICROCIRCUIT, LINEAR, RADIATION HARDENED, WIDEBAND, HIGH IMPEDENCE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-84135 REV E-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, MULTIPLEXER MONOLITHIC SILICON
DLA SMD-5962-89545 REV B-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, 8-BIT BIDIRECTIONAL BINARY COUNTER, MONOLITHIC SILICON
DLA DSCC-VID-V62/12637-2012 MICROCIRCUIT, DIGITAL-LINEAR, CMOS, 170 MHz, TRIPLE, 10-BIT HIGH SPEED VIDEO DAC, MONOLITHIC SILICON
DLA SMD-5962-87767 REV B-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, OCTAL BUFFER AND LINE DRIVER WITH OPEN-COLLECTOR OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-87754 REV B-2011 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, ANALOG MULTIPLEXER/DEMULTIPLEXER, TRIPLE SINGLE POLE, DOUBLE-POSITION, MONOLITHIC SILICON
DLA SMD-5962-89487 REV B-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
DLA SMD-5962-84143 REV F-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
DLA SMD-5962-07218 REV A-2008 MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENCY, NPN-PNP COMBINATION TRANSISTOR ARRAY, MONOLITHIC SILICON
DLA SMD-5962-88742 REV B-2011 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, HEX NONINVERTING BUFFERS, MONOLITHIC SILICON
DLA SMD-5962-85503 REV A-1987 MICROCIRCUITS, DIGITAL 16-BIT BIPOLAR MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-87705 REV B-2005 MICROCIRCUITS, BIPOLAR, VMEBUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-88578 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT IDENTITY COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-99536 REV E-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH FREQUENCY HALF BRIDGE DRIVER, MONOLITHIC SILICON
DLA SMD-5962-88737 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, OCTAL BUS TRANSCEIVERS, MONOLITHIC SILICON
DLA MIL-M-38510/321 C VALID NOTICE 2-2013 Microcircuits, Digital, Low-Power Schottky TTL, Buffers/Drivers, Open Collector Output, High Voltage, Monolithic Silicon
DLA SMD-5962-85502 REV E-2006 MICROCIRCUIT, DIGITAL, 16-BIT BIPOLAR MICROCONTROLLER, MONOLITHIC SILICON
DLA A-A-59739 A-2013 COIL, RF, CHIP, FIXED, HIGH Q, MINIATURE, SURFACE MOUNT
DLA SMD-5962-89526 REV C-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, SYNCHRONOUS 8-BIT,UP/DOWN COUNTER, MONOLITHIC SILICON
DLA MIL-M-38510/348 C-2004 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-83019 REV G-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, FLIP-FLOPS MONOLITHIC SILICON
DLA MIL-M-38510/382 B VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky TTL, D-Type Latches, Cascadable, Monolithic Silicon
DLA SMD-5962-90585 REV B-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCE SCHOTTKY TTL, MULTI-MODE BUFFERED LATCH, INV. (THREE-STATE), MONOLITHIC SILICON
DLA QPL-8971-10-2004 ELECTRODES, GRAPHITE, SPECTROMETRIC GRADE
DLA SMD-5962-84136 REV E-2005 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-88753 REV C-2011 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL BUS TRANSCEIVERS AND REGISTERS, MONOLITHIC SILICON
DLA SMD-5962-93217 REV C-2008 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR ,TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-94566 REV A-2001 MICROCIRCUIT, LINEAR, HIGH SPEED VIDEO OPERATIONAL AMPLIFIER WITH DISABLE, MONOLITHIC SILICON
DLA DSCC-VID-V62/06609 REV A-2013 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-84010 REV D-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, FLIP-FLOPS, MONOLITHIC SILICON

Gosstandart of Russia

GOST 18604.14-1977 Bipolar microwave oscillator transistors. Techniques for measuring coefficient modulus of inverse transmission of voltage in the circuit with general base at high frequency
GOST 19656.3-1974 Semiconductor UHF mixer diodes. Measurement methods of output impedance at an intermediate frequency
GOST 18604.15-1977 Bipolar microwave oscillator transistors. Techniques for measuring critical current
GOST 27694-1988 Integrated circuits. Low-, intermediate- and high-frequency amplifiers. Methods for measuring electric parameters
GOST 19656.2-1974 Semiconductor UHF mixer diodes. Measurement method of rectified current
GOST 18604.11-1988 Transistors bipolar. Method of measuring noise figure at high and ultra-high frequencies
GOST 19656.4-1974 Semiconductor UHF mixer diodes. Measurement methods of conversion losses
GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions
GOST 19656.1-1974 Semiconductor UHF mixer and detector diodes. Measurement method of voltage standing-wave ratio
GOST 19656.5-1974 Semiconductor UHF mixer and detector diodes. Measurement methods of output noise ratio
GOST 19656.9-1974 Ultra-high frequency multiplication and parametric semiconductor diodes fixed time and limit frequency measurement methods
GOST 19656.14-1979 Semiconductor microwave switching diodes. Measurement method of critical frequency
GOST 19656.9-1979 Semiconductor microwave varactors and multiplier diodes. Methods of measuring time constant and limiting frequency
GOST 19656.7-1974 Semiconductor UHF detector diodes. Measurement method of current sensitivity
GOST 19656.12-1976 Semicondactor UHF mixer diodes. Measurement method of input impedance
GOST 18604.1-1980 Transistors bipolar. Method for measuring collector-tobase time constant at high frequencies
GOST 19656.10-1988 Semiconductor microwave switching and limiter diodes. Methods of measuring loss resistances
GOST 19656.6-1974 Semiconductor UHF mixer diodes. Measurement methods of standard overall noise figure
GOST 20215-1984 Semiconductor microwave diodes. General specifications
GOST 26169-1984 Radioelectronic equipment electromagnetic compatibility. High-power bipolar high-frequency linear transistors intermodulation component coefficient standards
GOST R 71378-2024 High-voltage cenotrons. Method of measuring the anode-cathode capacitance
GOST 19656.15-1984 Semiconductor UHF diodes. Measurement methods of thermal resistance and pulse thermal resistance
GOST 18604.27-1986 Power high-voltage bipolar transistors. Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current

The Institution of Engineering and Technology (IET)

LOW-PWR HF MICROELEC-1996 Low-power HF Microelectronics: a unified approach
HIGH FREQ CIRC ENG-1996 High-frequency Circuit Engineering

Association Francaise de Normalisation

NF C96-314:1985 Microcircuits. Microwave. Couplers. General requirements.
NF Z86-384*NF ETS 300384:1998 Radio broadcasting systems. Very High Frequency (VHF), frequency modulated, sound broadcasting transmitters.

Military Standards (MIL-STD)

MIL MIL-M-38510/340D-2003 Microcircuits, Digital, Bipolar Advanced Schottky TTL, and Gates, Monolithic Silicon
MIL MIL-PRF-1/1047D-2013 Electron Tube, Negative Grid (Microwave) Type 2C41
MIL MIL-PRF-39003/9F-2009 Capacitor, Fixed, Electrolytic (Solid Electrolyte), Tantalum (Polarized, Sintered Slug), High Frequency, Established Reliability, Style CSR21
MIL MIL-PRF-39003/9G-2012 Capacitor, Fixed, Electrolytic (Solid Electrolyte), Tantalum (Polarized, Sintered Slug), High Frequency, Established Reliability, Style CSR21
MIL MIL-PRF-1/30C-2013 Electron Tube, Microwave, Negative Grid Type 2C36
MIL MIL-DTL-10392E-2008 Cord, Electrical (Audio, Miniature)
MIL MIL-A-28768/5-1987 ANTENNA, FIXED, HIGH FREQUENCY, VERTICAL POLARIZATION, OMNIDIRECTIONAL, BROADBAND
MIL MIL-DTL-10392F-2012 Cord, Electrical (Audio, Miniature)
MIL MIL-M-38510/22C-1989 MICROCIRCUITS, DIGITAL, BIPOLAR, HIGH-SPEED, TTL, FLIP-FLOPS MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/22B)
MIL MIL-PRF-1/1657E-2009 Electron Tube, Negative Grid (Microwave) Type 8727
MIL MIL-PRF-1/484E-2008 Electron Tube, Negative Grid (Microwave) Type 6299
MIL MIL-PRF-1/868F-2008 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 2C40A
MIL MIL-PRF-1/1633C-2015 Electron Tube, Negative Grid (Microwave) Type 7211
MIL MIL-PRF-1/1470E-2009 Electron Tube, Microwave (Negative Grid) Type 7698
MIL MIL-PRF-1/868G-2018 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE 2C40A
MIL MIL-PRF-1/1120H-2016 Electron Tube, Negative Grid (Microwave) Type 7289
MIL MIL-A-28768/3-1973 ANTENNA, FIXED HIGH FREQUENCY, VERTICAL LOG PERIODIC (DIPOLE)
MIL MIL-PRF-1/1429K-2016 Electron Tube, Negative Grid (Microwave) Type 7815
MIL MIL-PRF-1/1470F-2015 Electron Tube, Microwave (Negative Grid) Type 7698
MIL MIL-M-38510/340C-1988 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/340B)
MIL MIL-PRF-1/1660E-2019 Electron Tube, Microwave, Negative Grid Type 8403
MIL MIL-PRF-1/1660D-2015 Electron Tube, Microwave, Negative Grid Type 8403
MIL MIL-M-38510/333C-2003 MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/333B)
MIL MIL-M-38510/345C-2004 MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, EXCLUSIVE OR GATES, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/345B)
MIL MIL-PRF-1/1702D-2015 Electron Tube, Negative Grid (Microwave) Type 8745
MIL MIL-PRF-39003/11-2016 Capacitor, Fixed, Electrolytic (Solid Electrolyte), Tantalum (Polarized, Sintered Slug), High Frequency, Established Reliability, Style CSS21 (High Reliability Applications)
MIL MIL-PRF-1/1727B-2015 Electron Tube, Microwave, Negative Grid Type DOD-018
MIL MIL-PRF-1/1729E-2013 Electron Tube, Negative Grid (Microwave) TYPE 8538B 17/
MIL MIL-R-28887-1984 RADIO GROUP, VLF, LF, MF, AND HF
MIL MIL-E-1/1771-1979 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE DOD-041
MIL MIL-M-38510/352A-2004 MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND BUFFERS, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/352)
MIL MIL-PRF-27/205D-2012 Transformers and Inductors (Audio, Power, and High-Power Pulse), Inductors, Audio Frequency, High Q
MIL MIL-M-38510/8E-2005 MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, BUFFERS/DRIVERS OPEN COLLECTOR OUTPUT, HIGH VOLTAGE, MONOLITHIC SILICON (SEE BASE FOR INACTIVATION NOTICE) (SUPERSEDING MIL-M-38510/8D)
MIL MIL-PRF-1/1771A-2020 ELECTRON TUBE, NEGATIVE GRID (MICROWAVE) TYPE DOD-041 1/
MIL MIL-M-38510/334C-2003 MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, AND-OR-INVENT GATES, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/334B)

Cuban Institute of Standards and Metrology

NC 66-25-1987 Electronic and Electrotechnical Industry. High Frequency Bipolar Transistors. Quality Specifications
NC 66-28-1984 Electronics. High-Frequency Bipolar Transistors. Type BF 199. Quality Specifications
NC 66-27-1984 Electronics High-Frequency Bipolar Transistors, Type BF 310 Quality Specifications

Polski Komitet Normalizacyjny (PKN)

PN T01504 ArkusZ26-1974 Transistors Measurement of base resistance at high frequency rbb

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Std 433-2022 IEEE Recommended Practice for Insulation Testing™ of AC Electric Machinery with High Voltage at Very Low Frequency - Redline
IEEE Std 433-2009 IEEE Recommended Practice for Insulation Testing™ of AC Electric Machinery with High Voltage at Very Low Frequency - Redline
IEEE Unapproved Draft Std P433/D16 Oct 2009 Draft Recommeded Practice for Insulation Testing of AC Electric Machinery with High Voltage at Very Low Frequency
IEEE 433-2022 IEEE Recommended Practice for Insulation Testing of AC Electric Machinery with High Voltage Rating up to 30 kV at Very Low Frequency

International Telecommunication Union (ITU)

ITU-R RAPPORT BS.464-5 FRENCH-1990 Polarization of emissions in frequency-modulation broadcasting in band 8 (VHF)
ITU-R REPORT BS.464-5-1990 Polarization of emissions in frequency-modulation broadcasting in band 8 (VHF)
ITU-R F.401-2 FRENCH-1970 FREQUENCIES AND DEVIATIONS OF CONTINUITY PILOTS FOR FREQUENCY MODULATION RADIO-RELAY SYSTEMS FOR TELEVISION AND TELEPHONY
ITU-R RAPPORT SM.2125-1 FRENCH-2011 Parameters of and measurement procedures on H/V/UHF monitoring receivers and stations
ITU-R BT.798-1 SPANISH-1994 Digital Television Terrestrial Broadcasting in the VHF/UHF Bands

Magyar Szabványügyi Testület

MSZ 10906/19-1969 Electrode tube power mark measurement mode. Microelectrode tube band definition

Korean Agency for Technology and Standards (KATS)

KS C 6111-4-2007(2017) Homogeneity in the surface resistance of large high-Tc superconductor films at microwave frequencies
KS C 6111-4-2007(2022) Homogeneity in the surface resistance of large high-Tc superconductor films at microwave frequencies
KS C 6111-4-2022 Homogeneity in the surface resistance of large high-Tc superconductor films at microwave frequencies
KS C 6111-3-2022 Electronic characteristic measurements－Intrinsic surface impedance of high-TC superconductor films at microwave frequencies
KS C 6111-3-2007(2022) Electronic characteristic measurements－Intrinsic surface impedance of high-TC superconductor films at microwave frequencies
KS C 3610-2006 Radio-frequency coaxial cables

Institute of Interconnecting and Packaging Electronic Circuits (IPC)

IPC 6018D-2022 Qualification and Performance Specification for High Frequency (Microwave) Printed Boards
IPC 6018B-2011 Qualification and Performance Specification for High Frequency (Microwave) Printed Boards
IPC 6018B CD-2011 Qualification and Performance Specification for High Frequency (Microwave) Printed Boards
IPC AJ-820A-CHINESE-2012 Identification and performance specifications for high frequency (microwave) printed boards
IPC 6018C CHINESE-2016 Qualification and Performance Specification for High Frequency (Microwave) Printed Boards
IPC 6018B CHINESE-2011 Qualification and Performance Specification for High Frequency (Microwave) Printed Boards

American Society for Testing and Materials (ASTM)

ASTM F632-90 Test Method for Measuring High Frequency Small Signal Common Emitter Current Gain of Transistor
ASTM F1238-95(2003) Standard Specification for Refractory Silicide Sputtering Targets for Microelectronic Applications

Association of German Mechanical Engineers

DVS 0943-2001 High alloy rod electrode
DVS 0943-2006 High alloy rod electrode
DVS 0943-1991 High alloy rod electrode
VDI VDE DGQ DKD 2622 Blatt 19-2015 High frequency cable characterization

British Standards Institution (BSI)

BS EN IEC 61788-7:2020 Superconductivity - Electronic characteristic measurements. Surface resistance of high-temperature superconductors at microwave frequencies
BS EN 62024-1:2002 High frequency inductive components - Electrical characteristics and measuring methods - Nanohenry range chip inductor
BS ISO 12156-2:1998 Diesel fuel. Assessment of lubricity using the high-frequency reciprocating rig (HFRR)-Limit

Czech Standards Institute (UNMZ)

CSN 35 8781-1983 Mixing and detection semiconductor UHF diodes Electric parameter Measurement methods

American Welding Society (AWS)

WRC 160:1971 High-Frequency Resistance Welding

National Association of Corrosion Engineers (NACE)

NACE Paper 06117-2015 pH and reference electrodes for corrosion monitoring in extreme environments of high pressure and temperature

European Telecommunications Standards Institute (ETSI)

ETSI TS 102 562 V1.1.1 (2007-03)-2007 Electromagnetic compatibility and Radio spectrum Matters (ERM); Improved spectrum efficiency for RFID in the UHF Band

Spanish Association for Standardization (UNE)

UNE 21-009-1989 Overhead wires. Wire laid electrodes
AENOR UNE 26140:1959 HIGH FREQUENCY ELECTROACOUSTIC WARNING

International Electrotechnical Commission (IEC)

QC 750102/ SU 0001-1990 Detail Specification for Electronic Components High- Frequency Epitaxy-Planar Ambient-Rated Bipolar Transistors Type KT3II7A

Welding Research Council

BULLETIN 160-1971 HIGH-FREQUENCY RESISTANCE WELDING

Comitato Elettrotecnico Italiano

CEI EN IEC 61788-7:2020 Superconductivity Part 7: Electronic characteristic measurements - Surface resistance of high-temperature superconductors at microwave frequencies

Swiss Association for Standardization (SNV)

SN 219 505.6-1978 Weld preparation; juncture forms on steel, submerged arc welding.

General Motors Corporation (GM)

GM 9984070-1990 Primer - Cathodic High Build Electrocoat Revision F

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