Gallium Arsenide Indium Phosphide Material Hall Migration
Gallium Arsenide Indium Phosphide Material Hall Migration, Total:10 items.
The international standard classification for "Gallium Arsenide Indium Phosphide Material Hall Migration" includes: .
The Chinese standard classification for "Gallium Arsenide Indium Phosphide Material Hall Migration" includes: Technical Management .
Professional Standard - Electron
- SJ/T 11488-2015 Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
- SJ 3244.1-1989 Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
- SJ 3244.4-1989 Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
- SJ 3244.5-1989 Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
- SJ 3249.1-1989 Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material
Czech Standards Institute (UNMZ)
- CSN 34 5941-1984 Gallium arsenide and gallium phospide monocrystalline. Determination of resistivity and Hall coefficient
American Society for Testing and Materials (ASTM)
- ASTM F418-77(2002) Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements
- ASTM F418-77(1996)e1 Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements
Gosstandart of Russia
- GOST 25948-1983 Monocrystal gallium arsenide and gallium phosphide. Measurement of specific electric resistance and hall-coefficient
