multiple emitter transistor
multiple emitter transistor, Total:31 items.
The international standard classification for "multiple emitter transistor" includes: .
The Chinese standard classification for "multiple emitter transistor" includes: .
Taiwan Provincial Standard of the People's Republic of China
- CNS 13809-1997 Light Emitting Diode Dice
- CNS 8105-1981 Test Method for Transistor Collector - Emitter Saturation Voltage
Professional Standard - Education
- JY/T 0587-2020 General rules for X-ray polycrystalline diffractometry
CZ-CSN
- CSN 35 8757 Cast.8-1985 Transistors. Measuring methods of base-emitor voltage
- CSN 35 8741-1964 Transistore. Measurement of colleotor emitter residual voltage
- CSN 35 8757 Cast.1-1985 Transistors. Measuring method of collector-base and emitterbase breakdown voltage
- CSN 35 8757 Cast.12-1989 Blpolar transistors. Impuls measuring method of break-down voltage collector-emltter
- CSN 35 8757 Cast.5-1985 Transistors. Method of measuring collector and emitter barrier layer capacltance
- CSN 35 8757 Cast.4-1985 Transistors. Methods of measuring collector cut-off current, emitter cut-off current and collector-emitter cut-off current
- CSN 35 8757 Cast.2-1985 Transistors. Measuring method of common-emitter small-signal short-circuit forward current transfer ratio
- CSN 35 8753-1970 Transistors. Method of measuring short circuit input admittance in the common emitter configuration at higher frequencies
Gosstandart of Russia
- GOST 18604.6-1974 Transistors. Method for measuring emitter reverse current
- GOST 18604.3-1980 Transistors bipolar. Methods for measuring collector and emitter capacitances
- GOST 18604.27-1986 Power high-voltage bipolar transistors. Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current
- GOST 18604.22-1978 Transistors bipolar. Methods for measuring collector-emitter and base-emitter saturation voltage
- GOST R 71054-2023 Bipolar transistors. Parameters system
Defense Logistics Agency
- DLA SMD-5962-92075 REV B-2006 MICROCIRCUIT, DIGITAL, ECL, 68030/40 ECL/TTL CLOCK DRIVER, MONOLITHIC SILICON
- DLA SMD-5962-91530 REV A-2006 MICROCIRCUIT, DIGITAL, ECL, HEX TTL-TO-ECL TRANSLATOR, MONOLITHIC SILICON
- DLA SMD-5962-91531 REV A-2004 MICROCIRCUIT, DIGITAL, ECL, HEX ECL-TO-TTL TRANSLATOR, MONOLITHIC SILICON
- DLA SMD-5962-87560 REV F-2006 MICROCIRCUIT, DIGITAL, TTL-TO-ECL TRANSLATOR, MONOLITHIC SILICON
- DLA SMD-5962-87508 REV E-2006 MICROCIRCUIT, DIGITAL, ECL-TO-TTL TRANSLATOR, MONOLITHIC SILICON
- DLA SMD-5962-92066 REV A-2004 MICROCIRCUIT, DIGITAL, ECL, OCTAL ECL/TTL, BI-DIRECTIONAL TRANSLATOR WITH REGISTER, MONOLITHIC SILICON
- DLA MIL-S-19500/390 VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, Double-Emitter Types 3N74, TX3N74, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127
- DLA SMD-5962-85508 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-87711 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
PL-PKN
- PN T01504-22-1987 Transistors Measuring methods Collector-base and emitter-base capacitances Ccbo and Cebo
- PN T01504-10-1987 Transistors Measuring tnethod Collector-emitter sustaining voltage UcEO(sm) and Uceiusus)
Military Standards (MIL-STD)
- MIL MIL-S-19500/390-1968 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N74, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127
YU-JUS
- JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
- JUS N.R1.450-1981 Bipolar transistors. Measuring methods
IT-UNI
- UNI 6966-1971 Determination of the number of polar patterns in polycrystals by X-ray diffraction
