Gallium Nitride Substrate Abroad
Gallium Nitride Substrate Abroad, Total:10 items.
The international standard classification for "Gallium Nitride Substrate Abroad" includes: Semiconducting materials , Testing of metals .
The Chinese standard classification for "Gallium Nitride Substrate Abroad" includes: Compound semiconductor material , Metal physical property test method .
Professional Standard - Non-ferrous Metal
- YS/T 1653-2023 Gallium nitride substrates
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 37053-2018 General specification for epitaxial wafers and substrates based on gallium nitride
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
- GB/T 30856-2014 GaAs substrates for LED epitaxial chips
- GB/T 30855-2014 GaP substrates for LED epitaxial chips
Professional Standard - Electron
- SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode
British Standards Institution (BSI)
- BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
- 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
- 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
International Electrotechnical Commission (IEC)
- IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
GaN substrate,GaN substrate,Gallium Nitride Single Crystal Substrate,GaN single crystal substrate,"Atomic Force Microscopy Examination Method for Surface Roughness of Gallium Nitride Single Crystal Substrate",Gallium Nitride Substrate,GaN single crystal substrate,Gallium Nitride Substrate+,Gallium Nitride Substrate,Gallium Nitride Substrate Abroad,GaN substrate downstream,Measuring GaN Substrate Sheet Carrier Concentration
