Saturation photocurrent of silicon

Saturation photocurrent of silicon, Total:52 items.

The international standard classification for "Saturation photocurrent of silicon" includes: Testing of metals , Semiconducting materials , Testing of metals in general , Rubber , Reinforced plastics , Ferrous metals in general .

The Chinese standard classification for "Saturation photocurrent of silicon" includes: Metal physical property test method , Semimetal and semiconductor material in general , Rubber products in general , Synthetic resin and plastic , Steel and iron alloy analysis method , Technical management .

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工业和信息化部

• HG/T 4894-2016 Unsaturated silane coupling agent

Professional Standard - Energy

• NB/T 11075-2023 Saturable reactor for high voltage direct current (HVDC) converter valve

Professional Standard - Chemical Industry

• HG/T 4892~4894-2016 Amino silane coupling agent

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

• GB/T 8238-1987 Unsaturated polyester resin; Determination of refractive index of liquid and casting
• GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
• GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
• GB/T 223.5-2008 Steel and iron - Determination of acid-soluble silicon and total silicon content - Reduced molybdosilicate spectrophotometric method
• GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method
• GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
• GB/T 16583-2008 Identification of saturated rubbers in unsaturated rubbers

Group Standards of the People's Republic of China

• T/CEC 395-2020 Specifications for ultra-thin oriented electrical steel strip (sheet) for HVDC converter valve saturable reactor
• T/CASAS 026-2023 Test method for minority carrier lifetime in silicon carbide—microwave photoconductive decay
• T/CEC 112-2016 Preventive test procedure for saturated iron core type high temperature superconducting current limiting reactor
• T/CEC 394-2020 Specifications for ultra-thin oriented electrical steel strip (sheet) for HVDC converter valve saturable reactor
• T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells

Professional Standard - Military and Civilian Products

• WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes

Professional Standard - Electron

• SJ 2142-1982 Methods of measurement for current temperature coefficient of silicon current regulator diodes
• SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
• SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
• SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes

SCC

• AWWA QTC97036 Sorption and Inactivation of Viruses in Soil Columns Under Saturated and Unsaturated Flow Conditions
• AWWA WQTC62454 Virus and Bacteria Removal During Flow Through Saturated Clay Soil Columns
• SPC GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots -- Non-contact measurement of photoconductivity decay by microwave reflectance method (TEXT OF DOCUMENT IS IN CHINESE)
• BS PD IEC TS 63202-4:2022 Photovoltaic cells-Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells

Defense Logistics Agency

• DLA SMD-5962-94678-1994 MICROCIRCUIT, LINEAR, 20 MSPS FLASH A/D CONVERTER, MONOLITHIC SILICON
• DLA SMD-5962-96892 REV B-2003 MICROCIRCUIT, DIGITAL-LINEAR, 12-BIT D/A CONVERTER, MONOLITHIC SILICON
• DLA SMD-5962-95519-1994 MICROCIRCUIT, LINEAR, 12-BIT 2 MHZ A/D CONVERTER, MONOLITHIC SILICON

American Society for Testing and Materials (ASTM)

• ASTM F676-97 Standard Test Method for Measuring Unsaturated TTL Sink Current
• ASTM F676-97(2003) Standard Test Method for Measuring Unsaturated TTL Sink Current
• ASTM F28-91(1997) Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay

American National Standards Institute （ANSI)

• ANSI/NSF 41(i3)-2005 Non-liquid saturated treatment systems

GSO

• GSO IEC 61829:2015 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics

Korean Agency for Technology and Standards (KATS)

• KS D 0257-2002(2022) Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
• KS D 0257-2022 Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
• KS E 3076-2017 Methods for X－ray fluorescence spectrometric analysis of silica stone and silica sand
• KS E 3076-2022 Methods for X-ray fluorescence spectrometric analysis of silica stone and silica sand
• KS D 0257-2002(2017) Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
• KS D 0257-2002 Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

British Standards Institution (BSI)

• PD IEC TS 63202-4:2022 Photovoltaic cells - Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells
• BS EN IEC 63202-1:2019 Photovoltaic cells - Measurement of light-induced degradation of crystalline silicon photovoltaic cells
• PD IEC TS 63202-2:2021 Photovoltaic cells. Electroluminescence imaging of crystalline silicon solar cells

Japanese Industrial Standards Committee (JISC)

• JIS H 0604:1995 Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method

PL-PKN

• PN T01504-02-1987 Transistors Measuring methods Collector-emitter saturation voltage ?/C?-sat and base-emitter saturation voltage UBEat

ESDU - Engineering Sciences Data Unit

• ESDU 82004 D-2003 Thermophysical properties of industrially important fluids on the saturation line: Phenol.
• ESDU 82032 D-2003 Thermophysical properties of industrially important fluids on the saturation line: Cresols.
• ESDU 81010-1981 Thermophysical properties of industrially important fluids on the saturation line: ammonia.
• ESDU 83005 A-2003 Thermophysical properties of industrially important fluids on the saturation line: Xylenols.

German Institute for Standardization

• DIN 52129:2014 Uncoated bitumen saturated sheeting - Definition, designation, requirements

NL-NEN

• NEN 5789-1991 Soil - Unsaturated zone Determination of the saturated hydraulic conductivity

International Electrotechnical Commission (IEC)

• IEC TS 63202-4:2022 Photovoltaic cells - Part 4: Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells

CZ-CSN

• CSN 35 8740-1985 Transistors. Moasuring methods of saturation voltage

Standard Association of Australia （SAA）

• AS 1852.431:1981 International electrotechnical vocabulary - Transductors

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