GB/T 1553-1997 in English

SUPERSEDED

Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

Issued on:1997-06-03
Implemented on:1997-01-02
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $240.00
$233.00

Standard No:	GB/T 1553-1997
Document status:	SUPERSEDED
Superseded by:	GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
Superseded on:	2010-06-01
Title in English:	Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
Title in Chinese:	硅和锗体内少数载流子寿命测定光电导衰减法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1997-06-03
Implemented on:	1997-01-02
ICS Classification:	77.040.01-Testing of metals in general
Chinese Classification:	H21-Metal physical property test method
Professional Classification:	GB-National Standard
Related Keywords:	minority carrier lifetime standard test methods photoconductivity decay scopethis standard bulk germanium measurement method
Related Topics:	attenuation carrier lifetime What is the approximate fluorescence lifetime How long does streaming detection take What is the average fluorescence lifetime Test life carrier What is the attenuation rate of the component Germanene conducts electricity Attenuation method light paper electronics light attenuation method photoconductive germanium silicon carrier lifetime life gas in vivo and in vitro half-life Measuring life UV photoelectric lifetime What is the carrier concentration Attenuation method decline Germanium carrier lifetime GBT1553 GBT1553-1997 GBT1553-2009 Saturation photocurrent of silicon Determination of minority carrier lifetime in silicon and germanium Photoconductivity decay method Minority carrier lifetime waveform reading Principle of minority carrier life tester Minority life test Minority carrier life test method Measurement method of minority carrier lifespan gb/t1553

《GB/T 1553-1997硅和锗体内少数载流子寿命测定光电导衰减法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了硅和锗单晶体内少数载流子寿命的测量方法。本标准适用于非本征硅和锗单晶体内载流子复合过程中非平衡少数载流子寿命的测量。

Scope

This standard specifies the measurement method for the minority carrier lifetime in silicon and germanium single crystals. This standard applies to the measurement of the lifetime of non-equilibrium minority carriers in the process of carrier recombination in extrinsic silicon and germanium single crystals.

More samples: YD/T 3934-2021 DL/T 368-2010 JJG 21-2008

Sample only — not a preview of GB/T 1553-1997

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