Germanene conducts electricity
Germanene conducts electricity, Total:60 items.
The international standard classification for "Germanene conducts electricity" includes: Semiconducting materials , Testing of metals in general , Testing of metals , Gases for industrial application .
The Chinese standard classification for "Germanene conducts electricity" includes: Semimetal and semiconductor material in general , Metal physical property test method , Elemental semiconductor material , Industrial gas and chemical gas .
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 31987-2015 Gas for electronic industry―Germane
- GB/T 30861-2014 Germanium substrate for solar cell
- GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
- GB/T 26072-2010 Germanium single crystal for solar cell
- GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
- GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method
Group Standards of the People's Republic of China
- T/ICMTIA ESG0020-2022 Gas germane for integrated circuits
Japanese Industrial Standards Committee (JISC)
- JIS H 0607:1978 Determination of conductivity type in germanium by thermoelectromotive method
- JIS H 0603:1978 Measurement of minority carrier life time in germanium by photoconductive decay method
- JIS H 0601:1962 Testing methods of resistivity for germanium
Korean Agency for Technology and Standards (KATS)
- KS D 0266-1989(2024) Determination of conductivity type in germanium by thermoelectromotive method method
- KS D 0266-2019 Determination of conductivity type in germanium by thermoelectromotive method
- KS D 0266-2024 Determination of conductivity type in germanium by thermoelectromotive method method
- KS D 0266-1989 Determination of conductivity type in germanium by thermoelectromotive method
- KS D 0266-1989(2019) Determination of conductivity type in germanium by thermoelectromotive method
- KS D 0265-2019 Measurement of minority carrier life time in germanium by photoconductive decay method
- KS D 0265-2024 Measurement of minority carrier life time in germanium by photoconductive decay method
- KS D 0265-1989(2024) Measurement of minority carrier life time in germanium by photoconductive decay method
- KS D 0265-1989(2019) Measurement of minority carrier life time in germanium by photoconductive decay method
- KS C 0263-2022 Testing methods of resistivity germanium
- KS D 0265-1989 Measurement of minority carrier life time in germanium by photoconductive decay method
- KS C 0263-2002(2022) Testing methods of resistivity germanium
- KS C 0263-2002(2017) Testing methods of resistivity germanium
- KS C 0263-2002 Testing methods of resistivity germanium
Defense Logistics Agency
- DLA MIL-S-19500/76 C VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, Power Types 2N1412 and 2N1412A
- DLA MIL-S-19500/191 A (1)-1971 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263
- DLA MIL-S-19500/40 B VALID NOTICE 3-2011 Semiconductor, Transistor, NPN, Germanium, Power Type 2N326
- DLA MIL-S-19500/170 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Type 2N1499A
- DLA MIL-S-19500/49 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Types 2N464, 2N465, 2N467
- DLA MIL-S-19500/72 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Types 2N499 and 2N499A
- DLA MIL-PRF-19500/25 B NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N240
- DLA MIL-S-19500/58 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N665
- DLA MIL-S-19500/330 A VALID NOTICE 4-2011 Semiconductor Device, Transistor PNP, Germanium Types 2N1557A through 2N1560A
- DLA MIL-S-19500/68 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Switching Type 2N1120
- DLA MIL-S-19500/25 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N240
- DLA MIL-S-19500/51 E VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low Power Type 2N466
- DLA MIL-S-19500/13 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, High Power Type 2N174A
- DLA MIL-S-19500/44 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N428
- DLA MIL-S-19500/338 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP Germanium, Switching Type 2N3449
- DLA MIL-PRF-19500/27 E NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-FREQUENCY TYPE 2N384
- DLA MIL-S-19500/36 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N297A
- DLA MIL-S-19500/200 B VALID NOTICE 3-2011 Semiconductor Device, Diode, Germanium Type 1N270 JAN, JANTX, and JANTXV
- DLA MIL-S-19500/174 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, Low Power Type JAN-2N398A
- DLA MIL-S-19500/201 B VALID NOTICE 3-2011 Semiconductor Device, Diode, Germanium Type 1N277 JAN, JANTX, and JANTXV
- DLA MIL-S-19500/71 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N1195
- DLA MIL-S-19500/87 A VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium Low Power Type 2N1142
- DLA MIL-PRF-19500/205 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, LOW LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXV
- DLA MIL-S-19500/331 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Power Types 2N1553A through 2N1556A
- DLA MIL-S-19500/201 B-1989 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE 1N277 JAN, JANTX, AND JANTXV
- DLA MIL-S-19500/38 C (1)-1988 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPES 2N539 AND 2N539A
- DLA MIL-S-19500/9 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128
- DLA MIL-S-19500/41 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Switching Types 2N425, 2N426, 2N427
Military Standards (MIL-STD)
- MIL MIL-S-19500/340-1965 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH POWER TYPE 2N2079A
- MIL MIL-S-19500/364-1966 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE IN1838
- MIL MIL-S-19500/338-1965 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP GERMANIUM, SWITCHING TYPE 2N3449
- MIL MIL-S-19500/310-1965 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N2834 (NO S/S DOCUMENT)
- MIL MIL-S-19500/170A-1969 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N1499A (SUPERSEDING MIL-S-19500/170)
- MIL MIL-S-19500/123A-1966 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, VHF 2N700A (SUPERSEDING MIL-S-19500/123)
American Society for Testing and Materials (ASTM)
- ASTM F28-91(1997) Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
International Electrotechnical Commission (IEC)
- IEC 60937:1988 Cryostat end-cap dimensions for germanium semiconductor detectors for gamma-ray spectrometers
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