Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)
electronic industry ― germane scopethis standard germane international relative atomic mass molecular mass sulfuric acid solution pure ramie-dyed fabrics iridium content molar anatomical models
GB/T 31987-2015 in English

GB/T 31987-2015 in English

VALID

Gas for electronic industry―Germane

  • Issued on:2015-09-11
  • Implemented on:2016-05-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00

《GB/T 31987-2015电子工业用气体 锗烷》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了锗烷的技术要求、试验方法、标志、包装、贮运和安全。
本标准适用于氯化锗还原、电解氧化锗的硫酸溶液、锗镁合金与盐酸反应等方法得到的锗烷产品。它用于化学试剂、制取高纯度锗、化学气相淀积、扩散、非晶硅、外延、离子注入等领域。分子式:GeH4。
相对分子质量:76.662(按2011年国际相对原子质量计算)。


Scope

This standard specifies the technical requirements, test methods, marking, packaging, storage and transportation and safety of germane. This standard applies to germane products obtained by the reduction of germanium chloride, the electrolysis of germanium oxide in sulfuric acid solution, and the reaction of germanium-magnesium alloys with hydrochloric acid. It is used in chemical reagents, preparation of high-purity germanium, chemical vapor deposition, diffusion, amorphous silicon, epitaxy, ion implantation and other fields. Molecular formula: GeH4. Relative molecular mass: 76.662 (calculated according to the international relative atomic mass in 2011).

Sample only — not a preview of GB/T 31987-2015
Page: 1 / 0
100%

Loading PDF document...

Error loading PDF. Please make sure the file is valid and try again.

We also recommend