carrier
carrier, Total:16 items.
The international standard classification for "carrier" includes: Testing of metals , Chemical analysis of metals , Salts , Semiconducting materials , Testing of metals in general .
The Chinese standard classification for "carrier" includes: Metal physical property test method , Semimetal and semiconductor material in general , Semiconductor diode , Technical Management .
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 11068-1989 Gallium arsenide epitaxial layer-Determination of carrier concentration-Voltage-capacitance method
- GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
- GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
- GB/T 8757-2006 Determination of carrier concentration in galliumarsenide by the plasma resonance minimum
- GB/T 36705-2018 王志、李刚、钟圣俊、孟宪卫、王新华、乐有邦、吴晓煜、张倩倩
- GB/T 11068-2006 Gallium arsenide epitaxial layer - determination of carrier concentration voltage-capacitance method
- GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
- GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes
- GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
- GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method
Xinjiang Provincial Standard of the People's Republic of China
- DB65/T 3485-2013 Measurement method for minority carrier lifetime of solar grade polysilicon block
Professional Standard - Electron
- SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
- SJ 3244.4-1989 Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
- SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
- SJ 3244.1-1989 Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
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