Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)

Titanium silicon etching

Titanium silicon etching, Total:37 items.

The international standard classification for "Titanium silicon etching" includes: Semiconducting materials .

The Chinese standard classification for "Titanium silicon etching" includes: Elemental semiconductor material , Special electronic technology material .


General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 41652-2022 Silicon electrode and silicon ring for plasma etching machine

未注明发布机构

  • SAE AMS2643F-2023 Structural Examination of Titanium Alloys Chemical Etch Inspection Procedure

Group Standards of the People's Republic of China

SAE - SAE International

  • SAE AMS2643A-1988 Structural Examination of Titanium Alloys Chemical Etch Inspection Procedure
  • SAE AMS2643-1972 Structural Examination of Titanium Alloys Chemical Etch Inspection Procedure
  • SAE AMS2643B-1997 Structural Examination of Titanium Alloys Chemical Etch Inspection Procedure
  • SAE AMS2642E-2016 Structural Examination of Titanium Alloys Etch-Anodize Inspection Procedure
  • SAE AMS2642A-1989 Structural Examination of Titanium Alloys Etch-Anodize Inspection Procedure

Society of Automotive Engineers (SAE)

  • SAE AMS2643C-2002 Structural Examination of Titanium Alloys, Chemical Etch Inspection Procedure
  • SAE AMS2642-1972 STRUCTURAL EXAMINATION OF TITANIUM ALLOYS Etch-Anodize Inspection Procedure
  • SAE AMS2642A-1994 STRUCTURAL EXAMINATION OF TITANIUM ALLOYS Etch-Anodize Inspection Procedure
  • SAE AMS2642F-2021 Structural Examination of Titanium Alloys Etch-Anodize Inspection Procedure
  • SAE AMS2642B-2003 (R) Structural Examination of Titanium Alloys Etch-Anodize Inspection Procedure R(1994)
  • SAE AMS-C-81769-1998 Chemical Milling of Metals, Specification for
  • SAE AMS2642D-2010 Structural Examination of Titanium Alloys Etch-Anodize Inspection Procedure
  • SAE AMS7292A-1998 Labels, Aluminum Foil-Etched, Anodized, and Dyed
  • SAE AMS7292-1992 LABELS, ALUMINUM FOIL Etched, Anodized, and Dyed

IPC - Association Connecting Electronics Industries

DIN

  • DIN 50453-2:2023 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicon-dioxide coating, optical method
  • DIN 50453-1:2023 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method

German Institute for Standardization

  • DIN 50453-2:2023-08 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicon-dioxide coating, optical method
  • DIN 50453-1:2023-08 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method

Institute of Interconnecting and Packaging Electronic Circuits (IPC)

SCC

  • DIN 50453-2 E:2023 Draft Document - Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicium-dioxid coating, optical method
  • DIN 50453-1 E:2023 Draft Document - Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method

Korean Agency for Technology and Standards (KATS)