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Database: 365,228(8 Aug 2026)
capacitors introductionthis standard positive step-function temperature coefficient thermistors organic component polydimethyldiallylammonium chloride
GB/T 41652-2022 in English

GB/T 41652-2022 in English

VALID

Silicon electrode and silicon ring for plasma etching machine

  • Issued on:2022-07-11
  • Implemented on:2023-02-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00
Standard No: GB/T 41652-2022
Document status: VALID
Title in English: Silicon electrode and silicon ring for plasma etching machine
Title in Chinese: 刻蚀机用硅电极及硅环
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2022-07-11
Implemented on: 2023-02-01
ICS Classification: 29.045-Semiconducting materials
Chinese Classification: H82-Elemental semiconductor material
Professional Classification: GB-National Standard
Related Topics: etching
Electrode carbon content
Dated etching
Etching machine
Motor pole pair
Electrode ring
cobalt etching
ring disk electrode
ring-disk electrode method
ring electrode
Ring disk electrode+
Silicon anode
Silicon anode
Electrode English
The role of the common electrode
silicon deep etch
Electrode ring
Molybdenum etchant
Silicon Polarity
GB/T 41652
GB/T 41652-2022
etched mesh
Titanium silicon etching
Ta2O5, etching
Oxford etching machine
electrode
gb/t 41652-2022

《GB/T 41652-2022刻蚀机用硅电极及硅环》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC2(全国半导体设备和材料标准化技术委员会材料分会)执行,主管部门为国家标准化管理委员会。


Introduction

Technical Specification System Interpretation


Key Technical Parameter System

Electrical Performance Index System

Parameter Category Test Standard Equipment Requirements Control Index
Resistivity GB/T1551 In-line Four-Probe Method Four-Probe Tester (1-5)Ω·cm
Radial Resistivity Variation GB/T11073 Mapping Test Multi-point probe system ≤10%

Structural reliability index

Key geometric features are controlled within ±0.1mm, the positioning holes adopt R-type anti-stress chamfer, and the process window is: 0.3±0.1mm. The chamfered surface must meet the requirements of 3D optical profiler detection


Quality standard evolution path

Control dimension 2015 standard 2022 new standard Improvement gain
Surface roughness (Ra) 0.5μm 0.2μm 150% optimization
Oxygen content control - ≤24ppma New indicators

Technical motivation for standard formulation

With the development of advanced processes below 5nm, the plasma uniformity requirement is raised to a control level of ±2%. The newly added carbon content and micropore defect control modules in the 2022 version of the standard directly respond to the 14/16 angstrom process requirements.


Implementation Guide

Inspection Strategy Management

  • AQL Sampling Plan: Geometric dimensions shall comply with GB/T2828.1 Level II standard
  • Reliability Verification: It is recommended to pass 500 plasma cycle tests

Exception Handling Procedure

Failure mode analysis of excessive crystal orientation deviation should include: X-ray diffractometer phase analysis combined with EBSD grain orientation mapping.

Sample only — not a preview of GB/T 41652-2022
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