semiconductor metal elements

semiconductor metal elements, Total:77 items.

The international standard classification for "semiconductor metal elements" includes: Electronic components in general .

The Chinese standard classification for "semiconductor metal elements" includes: Technical Management , Technical management , Technical management , Sensitive component and sensor , Pipe fittings, clamps and seals .

Professional Standard - Electron

SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor
SJ 20079-1992 Test methods for gas sensors of metal-oxide semiconductor
SJ/T 10176-1991 Detail specification of metal rhomb package for semiconductor integrated circuits
SJ 20026-1992 Measuring methods for gas sensors of metal oxide semiconductor

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor

Group Standards of the People's Republic of China

T/QGCML 3081-2024 Semiconductor sputtering target high-purity titanium metal powder
T/CASAS 017-2021 Terminology of micro-nano metallic sintering technology for wide-bandgap semiconductor
T/QGCML 3970-2024 Semiconductor workshop metal dust intelligent detection and analysis system
T/CECA 35-2019 Metal oxide semiconductor gas sensor

Professional Standard - Aviation

HB 4-118-1983 Metal conduit semi-flexible connection
HB 4-118-1996 Semi-flexible Connection of Metal Conduit
HB 4-118-1976 Metal conduit semi-flexible connection

Professional Standard - Machinery

JB/T 11623-2013 Thick film metal oxide semiconductor gas sensor

未注明发布机构

DIN 50451-7 E:2017-09 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS
DIN 50451-7 E:2017-02 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

European Committee for Electrotechnical Standardization（CENELEC）

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
EN 62418:2010 Semiconductor devices - Metallization stress void test

Defense Logistics Agency

DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-96612 REV B-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, BINARY RATE MULTIPLIER, MONOLITHIC SILICON

British Standards Institution (BSI)

BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
BS EN 62418:2010 Semiconductor devices. Metallization stress void test
BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements

International Electrotechnical Commission (IEC)

IEC 60747-14-2:2000 Semiconductor devices - Part 14-2: Semiconductor sensors; Hall elements
IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 62418:2010 Semiconductor devices - Metallization stress void test
IEC 60747-14-1:2000 Semiconductor devices - Part 14-1: Semiconductor sensors; General and classification
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

HU-MSZT

MNOSZ 11292-1953 metal pipe heat element
MI 11290/8-1980 cooling element. Platinum metal logo

Association Francaise de Normalisation

NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
NF C80-204*NF EN 62418:2011 Semiconductor devices - Metallization stress void test
NF EN 62417:2010 Semiconductor Devices – Mobile Ion Testing for Metal Oxide Field Effect Semiconductor Transistors (MOSFETs)
NF EN 62418:2011 Semiconductor Devices - Testing Cavities Due to Metallization Stresses
NF EN 24503:1993 Hard metals - Determination of metallic elements by X-ray fluorescence - Fusion method

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE 59-1962 SEMICONDUCTOR RECTIFIER COMPONENTS

PL-PKN

PN T01503 ArkusZ01-1972 Semiconduc?or devices Dimension Device A1
PN T01503 ArkusZ50-1973 Semiconductor devicesDimensions Case C9

Danish Standards Foundation

DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/EN 62418:2010 Semiconductor devices - Metallization stress void test

ES-UNE

UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
UNE-EN 62418:2010 Semiconductor devices - Metallization stress void test (Endorsed by AENOR in October of 2010.)

SCC

DANSK DS/EN 62418:2010 Semiconductor devices - Metallization stress void test
CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
CEI EN 62418:2011 Semiconductor devices - Metallization stress void test
BS 2709:1956 Specification for the electrical performance of semiconductor rectifiers (metal rectifiers)
DIN 50451-7:2018 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

German Institute for Standardization

DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
DIN 50451-3:2014-11 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
DIN 50451-7:2018-04 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

GSO

BH GSO IEC 62418:2022 Semiconductor devices - Metallization stress void test
GSO IEC 62418:2021 Semiconductor devices - Metallization stress void test
GSO IEC 60747-14-2:2014 Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements
BH GSO IEC 60747-14-2:2016 Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements

American National Standards Institute （ANSI)

ANSI/ASTM D4388:2013 Specification for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
ANSI/ASTM D4325:2013 Test Methods for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
ANSI/EIA 321-C:1987 Numbering of Like-Named Terminal Functions in Semiconductor Devices and Designation of Units in Multiple-Unit Semiconductor Devices

Korean Agency for Technology and Standards (KATS)

KS C 7013-1985 TYPE DESIGNATION SYSTEM FOR SEMICONDUCTOR DEVICES
KS C 7013-1971(2000) TYPE DESIGNATION SYSTEM FOR SEMICONDUCTOR DEVICES

Lithuanian Standards Office

LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
LST EN 62418-2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010)

RU-GOST R

GOST R 50965-1996 Aluminium and aluminium alloys. Method for determination of hydrogen in solid metal

BELST

STB 1488-2004 Garbage chute metallic elements. Specifications
STB 1547-2005 Metallic elements of the smoke pipes. Specifications

U.S. Military Regulations and Norms

ARMY MIL-M-63530 (1)-1987 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530-1981 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC EIA-323-1966 Air-Convection-Cooled Life Test Environment for Lead-Mounted Semiconductor Devices

Institute of Electrical and Electronics Engineers (IEEE)

AIEE No 59-1962 (Supersedes AIEE No. 59, 1956 and AIEE Standard for Semiconductor Rectifier Components

American Society for Testing and Materials (ASTM)

ASTM D4388-20 Standard Specification for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
ASTM F615M-95(2008) Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components (Metric)