GB/T 18210-2000 in English
SUPERSEDEDCrystalline silicon photovoltaic (PV) array - On-site measurements of I-V characteristics
- Issued on:2000-10-17
- Implemented on:2001-05-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$146.00
《GB/T 18210-2000晶体硅光伏(PV)方阵 I-V特性的现场测量》由TC90(全国太阳光伏能源系统标准化技术委员会)归口,主管部门为工业和信息化部(电子)。
本标准描述晶体硅光伏方阵特性的现场测量及将测得的数据外推到标准测试条件(STC)或其他选定的温度攻辐照度条件下的程序。
Scope
This International Standard describes procedures for in situ measurements of the characteristics of crystalline silicon photovoltaic arrays and for extrapolation of measured data to standard test conditions (STC) or other selected conditions of temperature and irradiance. Measurement of the IV characteristics of the photovoltaic array under actual site conditions and its extrapolation under acceptance test conditions (ATC), capable of providing (see Appendix A and IECQ QC001002): a) data for power ratings; b) verification of installed Whether the power performance of the square array meets the design specifications; c) detect the difference between the field component characteristics and the laboratory or factory measurement; d) detect the performance degradation of the components and square array relative to the initial field data. Data from field measurements extrapolated to standard test conditions (STC) for a given component can be directly compared with results previously obtained in the laboratory and factory. The condition is that the standard photovoltaic device used in both measurements has the same spectral response and the same spatially distributed response. See the corresponding standard of GB/T 6495 (or IEC 60904). The data measured by the field array includes diodes, cables and mismatch losses. Therefore, they are not directly comparable to the sum of the component data. If a photovoltaic array is composed of several sub-arrays with different elevation angles, azimuth angles, processes, and electrical structures, the procedures described here will only apply to each photovoltaic sub-array.

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