phase field crystal

phase field crystal, Total:162 items.

The international standard classification for "phase field crystal" includes: Transistors , Other semiconductor devices , Semiconductor devices , Solar energy engineering , Ophthalmic equipment , Advanced ceramics , Materials for aerospace construction .

The Chinese standard classification for "phase field crystal" includes: Semiconductor triode , Field effect device , Physical power source , Semiconductor diode , Extracorporeal circulation, artificial organ and prosthesis device , Medical optical instrument and endoscope , Laser device , Basic standards for aviation and aerospace materials , Technical management , Technical management .

Group Standards of the People's Republic of China

T/CASAS 022-2022 Technical specification for gallium nitride field effect transistor used in line terminal units and triphase electricity meters
T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor

Professional Standard - Non-ferrous Metal

YS/T 1655-2023 Chemical vapor deposition of zinc sulfide crystals

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification
GB/T 18210-2000 Crystalline silicon photovoltaic (PV) array - On-site measurements of I-V characteristics
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors

Professional Standard - Medicine

YY 0290.10-2009 Intraocular lenses—Part 10:Phakic intraocular lenses
YY 0290.5-1997 Intraocular lenses―Part 5:Biocompatibility

Military Standard of the People's Republic of China-General Armament Department

GJB/Z 41.4-1993 Military semiconductor discrete device series spectrum field effect transistor

Professional Standard - Building Materials

JC/T 2146-2012 Heavily MgO-doped lithium niobate crystal for quasi-phase-matching application

Professional Standard - Aviation

HB 6742-1993 Determination of Crystal Orientation for Monocrystal Blade - X-ray Back-reflection Laue Photograph Method

Hebei Provincial Standard of the People's Republic of China

DB13/T 5222-2020 Determination of Purity of Nematic Thermotropic Liquid Crystal Monomer by Gas Chromatography

Professional Standard - Machinery

JB/T 6307.5-1994 Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge

Professional Standard - Aerospace

QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET)

Professional Standard - Electron

SJ 2748-1987 Blank detail specification for single-gate low noise microwave FETs
SJ 20184-1992 Semiconductor discrete device-Detail specification for field-effect transistor of Types CS3821,3822,3823
SJ 20231-1993 Verification regulation of KDK double gate FET Yfs tester
SJ/Z 9154.2-1987 Measurement of quartz crystal unit parameters by zero phase technique in a π-network - Part 2: Phase offset method for measurement of motional capacitance of quartz crystal units
SJ 50033/78-1995 Semiconductor discrete devices - Detail specification for Type CS0464 GaAs microwave FET
SJ 20789-2000 Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor

Taiwan Provincial Standard of the People's Republic of China

CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04049-1995 Guoyang Double Gate Field Effect Transistor CX Tester Verification Regulations

未注明发布机构

SA/SNZ TR IEC 63167:2021 Assessment of contact current related to human exposure to electric, magnetic and electromagnetic fields

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification

GOST

GOST R 71056-2023 Field effect transistor. Parameters system

SCC

BS IEC 60747-4-1:2000 Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
MIL MIL-PRF-19500/748B-2017 TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505, JANTX, JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/748A)
BS 6493-1.8:1985 Semiconductor devices. Discrete devices-Recommendations for field-effect transistors
MIL MIL-PRF-19500/385J-2015 Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/385H-2009 Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/385K-2019 Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
AS 2547.1.8:1986 Semiconductor devices, Part 1.8: Discrete devices - Field-effect transistors
MIL MIL-PRF-19500/295F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295E-2004 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295G-2020 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits-Field-effect transistors-Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
MIL MIL-PRF-19500/295C-2001 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/296E-2004 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
MIL MIL-PRF-19500/295D-2003 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/296D-2003 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N2609, JAN, AND U
MIL MIL-PRF-19500/296C-2001 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
MIL MIL-PRF-19500/296G-2020 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
MIL MIL-PRF-19500/296F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
MIL MIL-PRF-19500/751A-2014 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
IEC 60747-8:1984/AMD1:1991 Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
BS EN ISO 11979-10:2006+A1:2014 Ophthalmic implants. Intraocular lenses-Phakic intraocular lenses
MIL MIL-PRF-19500/692B-2015 Transistor, Field Effect, N-Channel, Silicon, Types 2N7515, 2N7516, and 2N7517, JANTXV and JANS
07/30161967 DC BS EN 60747-8. Semiconductor devices. Discrete devices. Part 8. Field-effect transistors
IEC 60747-8:1984/AMD2:1993 Amendment 2 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
MIL MIL-PRF-19500/696-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANISISTOR, PLASTIC, N-CHANNEL, SILICON TYPE 2N7537, 2N7537A, JAN, JANTX
MIL MIL-S-19500/296B-1993 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2609 (SUPERSEDING MIL-S-19500/296A)

Korean Agency for Technology and Standards (KATS)

KS C 5202-1980(2000) RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C IEC 60747-8:2002 Discrete devices－Part 8：Field－effect transistors
KS C 5202-2004 RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C IEC 61829:2005 Crystalline silicon photovoltaic(PV) array-On-site measurement of I-V characteristics
KS C IEC 61829:2016 Crystalline silicon photovoltaic(PV) array－On－site measurement of I－V characteristics
KS C IEC 61829-2021 Crystalline silicon photovoltaic(PV) array－On－site measurement of I－V characteristics
KS C IEC 60747-8:2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
KS C IEC 61829-2016(2021) Crystalline silicon photovoltaic(PV) array－On－site measurement of I－V characteristics
KS D 0205-2002(2022) Steel－Micrographic determination of the ferritic or austenitic grain size
KS D 0205-2002(2017) Steel－Micrographic determination of the ferritic or austenitic grain size
KS D 0205-1987 Steel－Micrographic determination of the ferritic or austenitic grain size
KS C IEC 60747-4-1-2020 Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
KS C IEC 60444-2-2002(2017) Measurement of quartz crystal unit parameters by zero phase technique in a p-network－Part 2：Phase offset method for measurement of motional capacitance of quartz crystal units
KS C IEC 60747-4-1-2002(2017) Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
KS C IEC 60444-2-2022 Measurement of quartz crystal unit parameters by zero phase technique in a p-network－Part 2：Phase offset method for measurement of motional capacitance of quartz crystal units

British Standards Institution (BSI)

BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors
BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
BS EN 60444-2:1997 Measurement of quartz crystal unit parameters. Phase offset method for measurement of motional capacitance of quartz crystal units
BS EN ISO 11979-5:2020 Ophthalmic implants. Intraocular lenses - Biocompatibility
BS QC 750114:1996 Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications

International Electrotechnical Commission (IEC)

IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
IEC 60747-8-3:1995 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications
IEC 60747-8-1:1987 Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
IEC 61829:1995 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics
IEC 60747-8:2010/AMD1:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8-2:1993 Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications
IEC 60747-8:2010+AMD1:2021 CSV Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:1984 Semiconductor devices. Discrete devices. Part 8 : Field-effect transistors
IEC 60747-8:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-4-1:2000 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification

YU-JUS

JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.390-1979 Bipolar tnmmton. Etsential ratings and chancteristics: bw-power signal transistors
JUS N.R1.373-1980 Semiconductor ?iodes. Essentialratings and characteristics. Low-power signaldiodes
JUS N.R1.392-1980 Field-effect transistors. Essential ratings and characteristics
JUS N.R1.323-1979 Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods
JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
JUS N.R1.391-1979 Bvpolar transistors. Essential ratings and characteristics: power transistors

Japanese Industrial Standards Committee (JISC)

JIS C 7214:1978 Reliability assured field-effect transistors

RU-GOST R

GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique
GOST 17466-1980 Transistors bipolar and field-effect. Basic parameters
GOST R IEC 61829-2013 Crystalline silicon photovoltaic batteries. On-site measurement of I-V characteristics
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.0-1983 Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
GOST 20398.7-1974 Field-effect transistors. Threshold and cut-off voltage measurement technique
GOST 20398.1-1974 Field-effect transistors. Shot-circuit forward transfer admittance measurement technique
GOST 20398.4-1974 Field-effect transistors. Active output conductance component measurement technique

European Standard for Electrical and Electronic Components

EN 150012:1991 Blank detail specification: single gate field-effect transistors

CZ-CSN

CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods
CSN 35 8797 Cast.8 IEC 747-8 ZA1+A2:1996 Semiconductor devices. Discrete devices. Part 8: Field-effect transistore

PL-PKN

PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
PN T01501 ArkusZ4-1973 Semiconductor deyictj Letter symbols of field-effect transistors porameters
PN T01505 ArkusZ11-1974 Field-effect ?ransis?ors Measuring method Drain-source breakdown yol?age U
PN T01505 ArkusZ01-1974 Field-effec? transistors Measuring me?hod Gate-source cut-o?f yol?aoe Ugs (Offi
PN T01505 ArkusZ10-1974 Field-effecl transistors Measuring method Ga?e-source breakdown voltage U(8R) GSS
PN T01505 ArkusZ12-1974 Field-e??ecl transis?ors Measuring method Shorf-circui? inpof conducfance common source 9uss
PN T01505 ArkusZ09-1974 Field-effect transittors Measuring method Drain-source breakdown voltage U(BR) DSS

European Committee for Electrotechnical Standardization（CENELEC）

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
EN 61829:2016 Photovoltaic (PV) array - On-site measurement of current-voltage characteristics
EN 61829:1998 Crystalline Silicon Photovoltaic (PV) Array On-Site Measurement of I-V Characteristics

GSO

OS GSO IEC 61829:2015 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics
BH GSO IEC 61829:2016 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics
GSO IEC 60747-8:2014 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
OS GSO IEC 60747-8:2014 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
GSO IEC 61829:2015 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics

IET - Institution of Engineering and Technology

MICROW FLD-EFFE TRANSIS-1994 Microwave Field-Effect Transistors: Theory@ design and applications
RF MICROW MDL MEAS TECHNQ FLD EFFT TRANSIS-2010 RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

TH-TISI

TIS 2124-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section three: blank detail specification for case.rated field.effect transistors for switching applications
TIS 2122-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz
TIS 2121-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors
TIS 2123-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section two: blank detail specification for field.effect transistors for case.rated power amplifier applications

RO-ASRO

STAS SR CEI 747-8-1993 Semiconductor devices Discrete devices Part 8: Field effect transistors
STAS 12389-1985 FIELD-EFFECT TRANSISTORS Limiting values and basic electrical parameters nomenclature
STAS 7128/8-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Symbols for field effect transitors
STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters

KR-KS

KS C IEC 60747-8-2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
KS C IEC 61829-2016 Crystalline silicon photovoltaic(PV) array－On－site measurement of I－V characteristics

Danish Standards Foundation

DS/EN 61829:1999 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics

IN-BIS

IS 4400 Pt.10-1983 Measurement Methods for Semiconductor Devices Part 10 Field Effect Transistors

Defense Logistics Agency

DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA MIL-PRF-19500/296 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
DLA MIL-PRF-19500/296 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
DLA MIL-PRF-19500/295 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
DLA MIL-PRF-19500/295 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DLA SMD-5962-89659-1990 MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID
DLA MIL-PRF-19500/750-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/750 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Type 2N7507U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/751-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/751 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/748-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS
DLA MIL-PRF-19500/748 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7505T3, JANTX, JANTXV and JANS
DLA MIL-PRF-19500/696 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, JAN AND JANTX

Association Francaise de Normalisation

NF C57-108:2000 Crystalline silicon photovoltaic (PV) array - On site measurement of I-V characteristics.

AENOR

UNE-EN 61829:2000 Crystalline silicon pr？hotovoltaic (PV) array. On-site measurement of I-V characteristics.

International Organization for Standardization (ISO)

ISO 643:1983 Steels; Micrographic determination of the ferritic or austenitic grain size

American National Standards Institute （ANSI)

ANSI Z80.13-2007 Phakic Intraocular Lenses
ANSI B74.23-2002 Measuring the Relative Crystal Strengths of a Diamond Cubic Boron Nitride Grits

ES-UNE

UNE-EN 60444-2:1997 MEASUREMENT OF QUARTZ CRYSTAL UNIT PARAMETERS BY ZERO PHASE IN A PI-NETWORK. PART 2: PHASE OFFSET METHOD FOR MEASUREMENT OF MOTIONAL CAPACITANCE OF QUARTZ CRYSTAL UNITS (Endorsed by AENOR in October of 1997.)

IECQ - IEC: Quality Assessment System for Electronic Components

QC 750112-1987 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors@ up to 5W and 1 GHz (IEC 747-8-1 ED 1)

Lithuanian Standards Office

LST EN 61829-2001 Crystalline silicon photovoltaic (PV) array. On-site measurement of I-V characteristics (IEC 61829:1995)

Others: continuous phase flow field,continuous phase flow field,crystal phase,phase of xrd crystal,xrd crystal phase,Thermoelectric phase field,Hong Kong photo field,phase field crystal,crystal phase