SJ 20789-2000 in English

VALID

Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor

Issued on:2000-10-20
Implemented on:2000-10-20
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $70.00
$68.00

Standard No:	SJ 20789-2000
Document status:	VALID
Title in English:	Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
Title in Chinese:	MOS场效应晶体管热敏参数快速筛选试验方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2000-10-20
Implemented on:	2000-10-20
Professional Classification:	SJ-Electronics
Related Keywords:	mos field effect transistors mos field effect transistor scopethis specification rapid screening thermal parameters test methods
Related Topics:	quick filter MOS field effect field effect transistor field effect transistor capacitive field effect transistor FET pb field effect screening test photoelectric field effect Parameter screening On-site rapid screening method thermal eutectic Quick Sorting Thermometer mos effect fast particle screening Oriental Hafnium Oxide Field Effect Transistor field effect transistor rapid test tube phase field crystal Super Junction Field Effect Transistor Fast Fundamental Parameter Method two-parameter screening Parameters in column efficiency experiments ferroelectric field effect transistor New method for receptor screening Transistor quantity selection Rapid screening calorimeter testing Nucleic acid aptamer screening method Screening methods for positive recombinants Photothermal effect test method Ligand screening method experiment Methods to eliminate matrix effects Reference and candidate methods Reference method candidate method On-site rapid screening of total chromium Rapid Screening Calorimeter Calibration

本规范规定了MOS场效应晶体管热敏参数快速筛选的试验方法。
本规范适用于MOS场效应晶体管（以下简称电阻器）热敏参数快速筛选。

Scope

This specification specifies the test method for rapid screening of thermal parameters of MOS field effect transistors. This specification is suitable for rapid screening of thermal parameters of MOS field effect transistors.

More samples: GB 18306-2015 JJG 21-2008 DL/T 368-2010

Sample only — not a preview of SJ 20789-2000

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