capacitive field effect transistor

capacitive field effect transistor, Total:131 items.

The international standard classification for "capacitive field effect transistor" includes: Semiconductor devices , Other semiconductor devices , Transistors .

The Chinese standard classification for "capacitive field effect transistor" includes: Technical management , Semiconductor triode , Field effect device .

Professional Standard - Electron

SJ 20789-2000 Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
SJ 20231-1993 Verification regulation of KDK double gate FET Yfs tester
SJ 20232-1993 Verification regulation of KDK double gate FET Gp tester
SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
SJ 20184-1992 Semiconductor discrete device-Detail specification for field-effect transistor of Types CS3821,3822,3823
SJ 2748-1987 Blank detail specification for single-gate low noise microwave FETs

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors
GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application

Professional Standard - Aerospace

QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET)

Military Standard of the People's Republic of China-General Armament Department

GJB/Z 41.4-1993 Military semiconductor discrete device series spectrum field effect transistor

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04049-1995 Guoyang Double Gate Field Effect Transistor CX Tester Verification Regulations

Group Standards of the People's Republic of China

T/CASAS 022-2022 Technical specification for gallium nitride field effect transistor used in line terminal units and triphase electricity meters
T/CASAS 007-2020 Test Specification for Silicon Carbide（SiC）Field-effect Transistors（MOSFET）Module of Electric Vehicles

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification

RU-GOST R

GOST 20398.5-1974 Field-effect transistors. Input transfer and output capacitance measurement technique
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.0-1983 Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 20398.7-1974 Field-effect transistors. Threshold and cut-off voltage measurement technique
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique
GOST 17466-1980 Transistors bipolar and field-effect. Basic parameters
GOST 20398.10-1980 Field-effect transistors. Drain current for Vgs=0 impulse measurement technique
GOST 20398.1-1974 Field-effect transistors. Shot-circuit forward transfer admittance measurement technique
GOST 20398.4-1974 Field-effect transistors. Active output conductance component measurement technique

GOST

GOST R 71056-2023 Field effect transistor. Parameters system

PL-PKN

PN T01505-17-1987 Field-effect transistors Measuring method Short-circuit utput capacitance in common source C22SS
PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
PN T01505-16-1987 Field-effect transistors Measuring method Short-circuit input capacitance in common source CnM
PN T01505 ArkusZ11-1974 Field-effect ?ransis?ors Measuring method Drain-source breakdown yol?age U
PN T01505 ArkusZ01-1974 Field-effec? transistors Measuring me?hod Gate-source cut-o?f yol?aoe Ugs (Offi
PN T01505 ArkusZ10-1974 Field-effecl transistors Measuring method Ga?e-source breakdown voltage U(8R) GSS
PN T01505-18-1987 Field-effect transistors Measuring method Common souree reverse transfer capacitance with input short-circuited Cl2j.s
PN T01505 ArkusZ12-1974 Field-e??ecl transis?ors Measuring method Shorf-circui? inpof conducfance common source 9uss
PN T01505 ArkusZ09-1974 Field-effect transittors Measuring method Drain-source breakdown voltage U(BR) DSS
PN T01501 ArkusZ4-1973 Semiconductor deyictj Letter symbols of field-effect transistors porameters
PN T01505 ArkusZ02-1974 Field-effect transistors Measuring me?hod Ga?e-source ?hreshold yoltage Ugs (TO)
PN T01505 ArkusZ14-1974 Field-effec? transistort Measuring method Short-circuit reyerse transfer conductance common source g,,?
PN T01505-19-1987 Field-effect transistors Measuring method Noise factor F and equivalent input noise yoltage U?

CZ-CSN

CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods
CSN 35 8797 Cast.8 IEC 747-8 ZA1+A2:1996 Semiconductor devices. Discrete devices. Part 8: Field-effect transistore

Korean Agency for Technology and Standards (KATS)

KS C 5202-1980(2000) RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C 5202-2004 RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C IEC 60747-8:2002 Discrete devices－Part 8：Field－effect transistors
KS C IEC 60747-8:2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors

SCC

BS IEC 60747-4-1:2000 Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
BS IEC 60747-8:2000 Discrete semiconductor devices and integrated circuits-Field-effect transistors-Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.
BS 6493-1.8:1985 Semiconductor devices. Discrete devices-Recommendations for field-effect transistors
MIL MIL-PRF-19500/748B-2017 TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505, JANTX, JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/748A)
AS 2547.1.8:1986 Semiconductor devices, Part 1.8: Discrete devices - Field-effect transistors
MIL MIL-PRF-19500/385J-2015 Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/385H-2009 Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/295F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295E-2004 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295G-2020 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/385K-2019 Transistors, Junction Field Effect, N-Channel, Silicon, Device Types 2N4856 Through 2N4861, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/295D-2003 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295C-2001 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/296E-2004 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
MIL MIL-PRF-19500/296D-2003 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N2609, JAN, AND U
MIL MIL-PRF-19500/296C-2001 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
MIL MIL-PRF-19500/692B-2015 Transistor, Field Effect, N-Channel, Silicon, Types 2N7515, 2N7516, and 2N7517, JANTXV and JANS
MIL MIL-PRF-19500/296F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
MIL MIL-PRF-19500/296G-2020 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
BS QC 750112:1988 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up ...
MIL MIL-PRF-19500/751A-2014 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS

YU-JUS

JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods
JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
JUS N.R1.390-1979 Bipolar tnmmton. Etsential ratings and chancteristics: bw-power signal transistors
JUS N.R1.373-1980 Semiconductor ?iodes. Essentialratings and characteristics. Low-power signaldiodes
JUS N.R1.391-1979 Bvpolar transistors. Essential ratings and characteristics: power transistors

British Standards Institution (BSI)

BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors
BS QC 750114:1996 Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications

IET - Institution of Engineering and Technology

MICROW FLD-EFFE TRANSIS-1994 Microwave Field-Effect Transistors: Theory@ design and applications
RF MICROW MDL MEAS TECHNQ FLD EFFT TRANSIS-2010 RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

Japanese Industrial Standards Committee (JISC)

JIS C 7214:1978 Reliability assured field-effect transistors

International Electrotechnical Commission (IEC)

IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
IEC 60747-8-1:1987 Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
IEC 60747-8-3:1995 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications
IEC 60747-8-2:1993 Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications
IEC 60747-8:2010/AMD1:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:1984 Semiconductor devices. Discrete devices. Part 8 : Field-effect transistors
IEC 60747-8:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010+AMD1:2021 CSV Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Defense Logistics Agency

DLA SMD-5962-89659-1990 MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID
DLA SMD-5962-01504 REV D-2011 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-01504 REV B-2007 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA SMD-5962-01503 REV A-2005 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA MIL-PRF-19500/296 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
DLA MIL-PRF-19500/295 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
DLA MIL-PRF-19500/295 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DLA MIL-PRF-19500/296 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
DLA SMD-5962-81023 REV L-2006 MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA MIL-PRF-19500/748 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7505T3, JANTX, JANTXV and JANS
DLA MIL-PRF-19500/748-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS
DLA MIL-PRF-19500/750 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Type 2N7507U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/750-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS
DLA SMD-5962-90500 REV B-2002 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, FET INPUT, OPERATIONAL AMPLIFIER
DLA MIL-PRF-19500/751-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/751 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
DLA SMD-5962-01503 REV C-2013 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON

RO-ASRO

STAS 12389-1985 FIELD-EFFECT TRANSISTORS Limiting values and basic electrical parameters nomenclature
STAS 7128/8-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Symbols for field effect transitors
STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters
STAS SR CEI 747-8-1993 Semiconductor devices Discrete devices Part 8: Field effect transistors
STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters

European Standard for Electrical and Electronic Components

EN 150012:1991 Blank detail specification: single gate field-effect transistors

TH-TISI

TIS 2124-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section three: blank detail specification for case.rated field.effect transistors for switching applications
TIS 2122-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz
TIS 2121-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors
TIS 2123-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section two: blank detail specification for field.effect transistors for case.rated power amplifier applications

GSO

GSO IEC 60747-8:2014 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
OS GSO IEC 60747-8:2014 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

European Committee for Electrotechnical Standardization（CENELEC）

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

KR-KS

KS C IEC 60747-8-2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors

IN-BIS

IS 4400 Pt.10-1983 Measurement Methods for Semiconductor Devices Part 10 Field Effect Transistors

Association Francaise de Normalisation

NF C96-008:1985 Semiconductor devices. Discrete devices and integrated circuits. Part 8 : field-effect transistors.

IECQ - IEC: Quality Assessment System for Electronic Components

QC 750114-1996 Harmonized System of Quality Assessment for Electronic Components Semiconductor Devices - Discrete Devices Field-Effect Transistors - Blank Detail Specification for Case-Rated Field-Effect Transistors for Switching Applications (IEC 747-8-3:1995)
QC 750106-1993 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section Two - Blank Detail Specification for Field-Effect Transistors for Case-Rated Power Amplifier Applications (IEC 747-8-2 ED 1)
QC 750114-1995 Semiconductor Devices - Discrete Devices - Part 8: Field-Effect Transistors - Section 3: Blank Detail Specification for Case-Rated Field-Effect Transistors for Switching Applications (IEC 747-8-3 ED 1)