GB/T 4586-1994 in English
VALIDSemiconductor devices-Discrete devices-Part 8: Field-effect transistors
- Issued on:1994-12-31
- Implemented on:1995-08-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
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《GB/T 4586-1994半导体器件 分立器件 第8部分:场效应晶体管》由TC78(全国半导体器件标准化技术委员会)归口,主管部门为工业和信息化部(电子)。
本标准等同采用IEC 747-8-1984《半导体器件 分立器件 第8部分:场效应晶体管》及其IEC 747-8第1次更改(1991)。本标准给出了下列类型场效应晶体管的标准:--A型:结栅型;--B型:绝缘栅耗尽型;--C型:绝缘栅增强型。
Scope
Generally, this standard needs to be used together with IEC 747-1-1983 "Semiconductor Devices Discrete Devices and Integrated Circuits Part 1: General Rules". In IEC 747-1, you can find all the basic information of the following: --Terms; --Letter symbols; --Basic ratings and characteristics; --Test methods;
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