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Database: 365,228(8 Aug 2026)
semiconductor devices discrete devices field-effect transistors semiconductor integrated circuits part basic information ammonia chemisorption scopethis standard treatment processtemperature aircraft radar-transportation test
GB/T 4586-1994 in English

GB/T 4586-1994 in English

VALID

Semiconductor devices-Discrete devices-Part 8: Field-effect transistors

  • Issued on:1994-12-31
  • Implemented on:1995-08-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $520.00
$505.00
Standard No: GB/T 4586-1994
Document status: VALID
Title in English: Semiconductor devices-Discrete devices-Part 8: Field-effect transistors
Title in Chinese: 半导体器件 分立器件 第8部分:场效应晶体管
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 1994-12-31
Implemented on: 1995-08-01
Superseding: GB 4586-1984 Measuring methods for field-effect transistors
ICS Classification: 31.080-Semiconductor devices
Chinese Classification: L42-Semiconductor triode
Professional Classification: GB-National Standard
Related Keywords: semiconductor devices discrete devices
field-effect transistors
semiconductor
integrated circuits part
basic information
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gb/t 4586-94

《GB/T 4586-1994半导体器件 分立器件 第8部分:场效应晶体管》由TC78(全国半导体器件标准化技术委员会)归口,主管部门为工业和信息化部(电子)。
本标准等同采用IEC 747-8-1984《半导体器件 分立器件 第8部分:场效应晶体管》及其IEC 747-8第1次更改(1991)。本标准给出了下列类型场效应晶体管的标准:--A型:结栅型;--B型:绝缘栅耗尽型;--C型:绝缘栅增强型。


Scope

Generally, this standard needs to be used together with IEC 747-1-1983 "Semiconductor Devices Discrete Devices and Integrated Circuits Part 1: General Rules". In IEC 747-1, you can find all the basic information of the following: --Terms; --Letter symbols; --Basic ratings and characteristics; --Test methods;

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