effect transistor

effect transistor, Total:54 items.

The international standard classification for "effect transistor" includes: Other semiconductor devices , Semiconductor devices , Transistors .

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors
GB/T 4586-1994 Semiconductor devices－Discrete devices－Part 8: Field-effect transistors
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz

JJG(电子) 04049-1995 Guoyang Double Gate Field Effect Transistor CX Tester Verification Regulations

SJ 50033/106-1996 Semiconductor discrete device - Detail specification for Type CS203 GaAs microwave low noise field effect transistor
SJ/T 11055-1996 Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ 50033/81-1995 Semiconductor discrete devices-Detail specification for Type CS0524 GaAs microwave power FET
SJ 50033.51-1994 Semiconductor discreted devices - Detail specification for type CS0558 GaAs microwave dual gate FET
SJ 50033/78-1995 Semiconductor discrete devices - Detail specification for Type CS0464 GaAs microwave FET
SJ 50033/42-1994 Semiconductor discrete device - Detail specification for type CS0467 GaAs microwave FET
SJ 50033/83-1995 Semiconductor discrete devices-Detail specification for Type CS139 silicon P-channel MOS enhancement mode field-effect transistor
SJ 50033/80-1995 Semiconductor discrete devices-Detail specification for Type CS0513 GaAs microwave power FET
SJ 50033.53-1994 Semiconductor discrete device - Detail specification for type CS0530 and CS0531 GaAs microwave power field effect transistor
SJ 50033/85-1995 Semiconductor discrete devices - Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistor

QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET)

BS IEC 60747-4-1:2000 Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
BS 6493-1.8:1985 Semiconductor devices. Discrete devices-Recommendations for field-effect transistors
AS 2547.1.8:1986 Semiconductor devices, Part 1.8: Discrete devices - Field-effect transistors

MICROW FLD-EFFE TRANSIS-1994 Microwave Field-Effect Transistors: Theory@ design and applications

GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique
GOST 17466-1980 Transistors bipolar and field-effect. Basic parameters
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.0-1983 Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique

BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors
BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors

IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
IEC 60747-8-1:1987 Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
IEC 60747-8-3:1995 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications
IEC 60747-8-2:1993 Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications

PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
PN T01505 ArkusZ11-1974 Field-effect ?ransis?ors Measuring method Drain-source breakdown yol?age U
PN T01501 ArkusZ4-1973 Semiconductor deyictj Letter symbols of field-effect transistors porameters
PN T01505 ArkusZ01-1974 Field-effec? transistors Measuring me?hod Gate-source cut-o?f yol?aoe Ugs (Offi

CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods

JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods
JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.

TIS 2124-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section three: blank detail specification for case.rated field.effect transistors for switching applications
TIS 2122-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz

STAS 12389-1985 FIELD-EFFECT TRANSISTORS Limiting values and basic electrical parameters nomenclature