GB/T 6219-1998 in English

VALID

Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz

Issued on:1998-01-01
Implemented on:1999-06-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $210.00
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Standard No:	GB/T 6219-1998
Document status:	VALID
Title in English:	Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
Title in Chinese:	半导体器件分立器件第8部分:场效应晶体管第一篇１GHｚ、５W以下的单栅场效应晶体管空白详细规范
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1998-01-01
Implemented on:	1999-06-01
Superseding:	GB 6219-1986 Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz (Applicable for certification)
ICS Classification:	31.080.30-Transistors
Chinese Classification:	L42-Semiconductor triode
Professional Classification:	GB-National Standard
Related Keywords:	detailed specification blank specification one-blank detail specification single-gate field-effect transistors general specification
Related Topics:	field effect field effect transistor field effect transistor effect Single Gate Field Effect Transistor gb6219 capacitive field effect transistor FET pb field effect photoelectric field effect effect transistor Field Effect Transistor Blank Details Hafnium Oxide Field Effect Transistor discrete device void effect Oriental Hafnium Oxide Field Effect Transistor field effect transistor planar long-lived transistor phase field crystal Super Junction Field Effect Transistor FET GBT6219 GBT6219-1998 ICPms matrix effect Semiconductor Devices Discrete Devices Part 8-2: Superjunction Metal Oxide Semiconductor Field Effect Transistor Blank Details ferroelectric field effect transistor

《GB/T 6219-1998半导体器件分立器件第8部分:场效应晶体管第一篇 1 GHz、5 W以下的单栅场效应晶体管空白详细规范》由TC78（全国半导体器件标准化技术委员会）归口，主管部门为工业和信息化部（电子）。
详见本标准。

Scope

This blank detailed specification stipulates the basic principles for formulating detailed specifications for single-gate poplar effect transistors below 1GHz and 5W, and all detailed specifications within this range are consistent with this blank detailed specification. This blank specification is related to GB/T 4589.1-1989 "General Specification for Discrete Devices and Integrated Circuits for Semiconductor Devices" (DEC 747-10: 1984) and GB/T 1260-900 "Specification for Discrete Devices for Semiconductor Devices" (IEC 747.11: 1985) One of a series of blank detail specifications for .

More samples: DL/T 5154-2012 JJG 21-2008 NB/T 47013.2-2015

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GB/T 6219-1998 in English

Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz

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