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Testing of Discrete Devices

Testing of Discrete Devices, Total:220 items.

The international standard classification for "Testing of Discrete Devices" includes: Space systems and operations , Aerospace electric equipment and systems , Semiconductor devices in general , Optoelectronics. Laser equipment , Diodes , Semiconductor devices , Transistors .

The Chinese standard classification for "Testing of Discrete Devices" includes: Technical Management , Computer application , Electronic components , Semiconductor discrete devices in general , Optoelectronic device assembly , Semiconductor rectifier devices , Semiconductor triode , Laser device .


Professional Standard - Electron

  • SJ/T 10149-1991 Graphic base of electronic components graphics of semiconductor discrete device
  • SJ/T 11089-1996 Letter symbols for discrete semiconductor components
  • SJ/T 9533-1993 Grading standard of quality for semiconductor discrete devices
  • SJ/T 11591.4.2.1-2016 Stereoscopic display devices.Part 4-2-1: Measuring methods for autostereoscopic displays.Optical and Electro-optical
  • SJ/T 11874-2022 Stress test procedures for semiconductor discrete devices used in electric vehicles
  • SJ/T 11820-2022 Technology requirements and test methods for discrete semiconductor DC parameters test instruments
  • SJ 20233-1993 Verification regulation of model IMPACT-II semiconductor discrete device test sysytem
  • SJ 2849-1988 Construction dimensions for package parts of discrete semiconductor devices

Professional Standard - Aerospace

  • QJ 3048-1998 Specifications for Development of Testing Software in Device Testing Station
  • QJ 787-1983 Semiconductor Discrete Devices - Specifications for Screening
  • QJ 1511A-1998 Semiconductor Discrete Devices - Specifications for Acceptance

未注明发布机构

  • GJB 33A-1997 General Specification for Semiconductor Discrete Devices
  • GJB 128A-1997 Semiconductor discrete device test methods

Military Standard of the People's Republic of China-General Armament Department

  • GJB 3164-1998 Semiconductor discrete device packaging specifications
  • GJB/Z 10-1989 Semiconductor discrete device series type spectrum
  • GJB 33B-2021 General Specification for Semiconductor Discrete Devices
  • GJB 128B-2021 Semiconductor discrete device test methods
  • GJB 33-1985 General Specification for Semiconductor Discrete Devices
  • GJB 128-1986 Aerial photographic specification for military topographic mapping

National Metrological Verification Regulations of the People's Republic of China

  • JJG(电子) 310002-2006 Specification for verification of DC parameter testers for semiconductor discrete devices
  • JJG(电子) 310003-2006 Specification for verification of capacitor parameter testers for semiconductor discrete devices

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 15651.3-2003 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • GB/T 12560-1999 Semiconductor devices --Sectional specification for discrete devices
  • GB/T 15651-1995 Semiconductor devices Discrete devices and integrated circuits Part 5: Optoelectronic devices
  • GB/T 11499-2001 Letter symbols for discrete semiconductor devices
  • GB/T 7581-1987 of outlines for semiconductor discrete devices
  • GB/T 20516-2006 Semiconductor devices - Discrete devices - Part 4: Microwave devices
  • GB/T 6351-1998 Semiconductor devices--Discrete devices Part 2:Rectifier diodes Section One--Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rate
  • GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
  • GB/T 4586-1994 Semiconductor devices-Discrete devices-Part 8: Field-effect transistors
  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers

工业和信息化部

  • SJ/T 11591.4.1.1-2016 Stereoscopic display devices Part 4-1-1: Measurement methods for glasses-type stereoscopic display devices - Optics and optoelectronics

Shaanxi Provincial Standard of the People's Republic of China

  • DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

  • GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers

ES-AENOR

International Electrotechnical Commission (IEC)

  • IEC 60747-11:1985 Semiconductor devices. Discrete devices. Part 11 : Sectional Specification for discrete devices
  • IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
  • IEC 60747-5-3:1997 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • IEC 60747-4:2001 Semiconductor devices - Discrete devices - Part 4: Microwave devices
  • IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • IEC 60747-1:1983 Semiconductor devices. Discrete devices. Part 1 : General
  • IEC 60747-6:1983 Semiconductor devices. Discrete devices. Part 6 : Thyristors
  • IEC 60747-7:1988 Semiconductor discrete devices and integrated circuits; part 7: bipolar transistors
  • IEC 60747-5-5:2013 Semiconductor devices.Discrete devices.Part 5-5: Optoelectronic devices.Photocouplers
  • IEC 60747-7:2010+AMD1:2019 CSV Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-7:2010/AMD1:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-5-5:2007/AMD1:2013 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60747-7:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-11:1985/AMD1:1991 Semiconductor devices; part 11: sectional specification for discrete devices; amendment 1
  • IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
  • IEC 60747-14-4:2011 Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
  • IEC 60747-5-3:1997+AMD1:2002 CSV Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-2:1983 Semiconductor devices. Discrete devices. Part 2 : Rectifier diodes
  • IEC 60747-5-3:1997/AMD1:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • IEC 60747-8:2010+AMD1:2021 CSV Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
  • IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
  • IEC 60747-5-5:2007+AMD1:2013 CSV Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-8:1984 Semiconductor devices. Discrete devices. Part 8 : Field-effect transistors
  • IEC 60747-8:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
  • IEC 60747-8:2010/AMD1:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
  • IEC 60747-5:1992 Semiconductor devices; discrete devices and integrated circuits; part 5: optoelectronic devices

Korean Agency for Technology and Standards (KATS)

Association Francaise de Normalisation

  • NF C96-015*NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15 : isolated power semiconductor devices
  • NF E60-160-2*NF ISO 13041-2:2020 Test conditions for numerically controlled turning machines and turning centres - Part 2 : geometric tests for machines with a vertical workholding spindle
  • NF C96-005:1994 Discrete devices and integrated circuits. Part 5 : optoelectronic devices.
  • NF C96-011:1989 Electronic Components Semiconductor devices Part 11:Sectional specification for discrete devices
  • NF C96-005-3/A1*NF EN 60747-5-3/A1:2002 Discrete semiconductor devices and integrated circuits - Partie 5-3 : optoelectronic devices - Measuring methods
  • NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15: isolated semiconductor power devices
  • NF EN 60747-5-3/A1:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: optoelectronic devices - Measurement methods
  • NF EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Part 5-3: optoelectronic devices - Measurement methods
  • NF C96-005-3*NF EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Part 5-3 : optoelectronic devices - Measuring methods
  • NF C96-005-5*NF EN 60747-5-5:2012 Semiconductor devices - Discrete devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF E60-132-2*NF ISO 2773-2:1997 Test conditions for pillar type vertical drilling machines. Testing of the accuracy. Part 2 : practical test.
  • NF C96-015:2005 Discrete semiconductor devices - Part 15: isolated power semiconductor devices

European Committee for Electrotechnical Standardization(CENELEC)

  • EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

SCC

  • BS 6493-1-1.5:1985 Semiconductor devices: discrete devices and integrated circuits. Discrete devices.-Recommendations for optoelectronic devices
  • AS 2547.1.5:1986 Semiconductor devices, Part 1.5: Discrete devices - Optoelectronic devices
  • IEC 60747-4:1991+AMD1:1993+AMD2:1999 CSV Semiconductor devices - Discrete devices - Part 4: Microwave devices
  • BS 6493-1.2:1984 Semiconductor devices. Discrete devices-Recommendations for rectifier diodes
  • BS 6493-1.7:1989 Semiconductor devices. Discrete devices-Recommendations for bipolar transistors
  • AS 2547.1.1:1986 Semiconductor devices, Part 1.1: Discrete devices - General
  • BS EN 60747-5-5:2011+A1:2015 Semiconductor devices. Discrete devices-Optoelectronic devices. Photocouplers
  • AS 2547.1.6:1986 Semiconductor devices, Part 1.6: Discrete devices - Thyristors
  • BS 6493-1.8:1985 Semiconductor devices. Discrete devices-Recommendations for field-effect transistors
  • BS 6493-1.6:1984 Semiconductor devices. Discrete devices-Recommendations for thyristors
  • IEC 60747-1:1983/AMD3:1996 Amendment 3 - Semiconductor devices - Discrete devices - Part 1: General
  • DANSK DS/EN 60747-5-5:2011 Semiconductor devices – Discrete devices – Part 5-5: Optoelectronic devices – Photocouplers
  • DANSK DS/EN 60747-5-5/A1:2011 Semiconductor devices – Discrete devices – Part 5-5: Optoelectronic devices – Photocouplers
  • CEI EN 60747-5-5/A1:2012 Semiconductor devices - Discrete devices Part 5-5: Optoelectronic devices - Photocouplers
  • DANSK DS/EN 60747-5-3:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • DANSK DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • AS 2547.1.7:1989 Semiconductor devices, Part 1.7: Discrete devices - Bipolar transistors
  • AS 2547.1.11:1986 Semiconductor devices, Part 1.11: Sectional specification for discrete devices (QC 750 000)
  • CEI EN 60747-5-3:2002 Discrete semiconductor devices and integrated circuits Part 5-3: Optoelectronic devices - Measuring methods
  • CEI EN 60747-5-5:2012 Semiconductor devices - Discrete devices Part 5-5: Optoelectronic devices - Photocouplers
  • AS 2547.1.2:1986 Semiconductor devices, Part 1.2: Discrete devices - Rectifier diodes
  • IEC 60747-5:1984 Semiconductor devices - Discrete devices and integrated circuits - Part 5: Optoelectronic devices
  • CEI EN 60747-15:2012 Semiconductor devices - Discrete devices Part 15: Isolated power semiconductor devices
  • IEC 60747-6:1983/AMD2:1994 Amendment 2 - Semiconductor devices - Discrete devices - Part 6: Thyristors
  • IEC 60747-6:1983/AMD1:1991 Amendment 1 - Semiconductor devices - Discrete devices - Part 6: Thyristors
  • IEC 60747-10:1984 Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits
  • AS 2547.1.8:1986 Semiconductor devices, Part 1.8: Discrete devices - Field-effect transistors
  • CEI EN 62047-11:2014 Semiconductor devices - Micro-electromechanical devices Part 11: Test method for coefficients of linear thermal expansion of freestanding materials for micro-electromechanical systems
  • BS 6493-1.4:1992 Semiconductor devices. Discrete devices-Recommendations for microwave diodes and transistors-Recommendations for microwave devices
  • DANSK DS/EN 12681-2:2017 Founding – Radiographic testing – Part 2: Techniques with digital detectors
  • IEC 60747-7:1988/AMD1:1991 Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-7:1988/AMD2:1994 Amendment 2 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
  • IEC 60747-2:1983/AMD2:1993 Amendment 2 - Semiconductor devices - Discrete devices - Part 2: Rectifier diodes
  • IEC 60747-2:1983/AMD1:1992 Amendment 1 - Semiconductor devices - Discrete devices - Part 2: Rectifier diodes
  • IEC 60747-5:1992/AMD2:1995 Amendment 2 - Semiconductor devices - Discrete devices and integrated circuits - Part 5: Optoelectronic devices

Danish Standards Foundation

  • DS/IEC 747-11:1987 Semiconductor devices. Part 11: Sectional Specification for discrete devices
  • DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices
  • DS/EN 60747-5-3/A1:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • DS/EN 60747-5-5:2011 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • DS/IEC 747-2:1985 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes
  • DS/EN 60747-5-3:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
  • DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

CENELEC - European Committee for Electrotechnical Standardization

  • EN 60747-15:2004 Discrete semiconductor devices Part 15: Isolated power semiconductor devices

TH-TISI

  • TIS 1863-2009 Semiconductor devices.discrete devices
  • TIS 2126-2002 Semiconductor devices.part 10: generic specification for discrete devices and integrated circuits
  • TIS 2121-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors

PL-PKN

  • PN T01204-1990 Semiconductor devices Sectional specification for discrete devices
  • PN T01204-A1-1990 Semiconductor devices Sectional specification for discrete devices Amendment 1
  • PN T01103-1992 Semiconductor devices. Generic specification for discrete devices and integrated circuits
  • PN T01203-1989 Przyrz?dy pó?przewodnikowe Przyrz?dy dyskretne Diody sygna?owe (z w??czeniem diod prze??czaj?cych) i diodv stabilizuj?ce

British Standards Institution (BSI)

  • BS 6493-1.1:1984 Semiconductor devices - Part 1: Discrete devices - Section 1.1 General
  • BS ISO 2773:2024 Test conditions for pillar type vertical drilling machines. Testing of accuracy
  • BS EN 60747-5-3:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. Measuring methods
  • BS IEC 60747-5-3:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. Measuring methods
  • BS EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Optoelectronic devices - Measuring methods
  • BS 6493-1.5:1992(2003) Semiconductor devices — Part 1 : Discrete devices — Section 1.5 Recommendations for optoelectronic devices
  • BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
  • BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
  • BS EN 60747-5-5:2011 Semiconductor devices. Discrete devices. Optoelectronic devices. Photocouplers
  • BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors
  • BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
  • BS IEC 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
  • BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
  • BS EN 308:2022 Heat exchangers. Test procedures for establishing performance of air to air heat recovery components
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • BS IEC 60747-6:2016 Semiconductor devices Part 6 : Discrete devices — Thyristors
  • 22/30449725 DC BS ISO 6779 Test conditions for vertical internal type broaching machines. Testing of accuracy
  • BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
  • BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
  • BS EN 60747-5-3:2001(2003) Discretesemiconductor devices and integrated circuits — Part 5 - 3 : Optoelectronic devices — Measuring methods
  • BS ISO 6481:2019 Test conditions for vertical surface type broaching machines. Testing of accuracy
  • BS IEC 60747-2:2000 Discrete semiconductor devices and integrated circuits - Rectifier diodes
  • BS ISO 19744:2020 Test conditions for numerically controlled broaching machines. Testing of accuracy. Vertical surface type broaching machines
  • BS ISO 6779:2023 Test conditions for vertical internal type broaching machines. Testing of accuracy
  • BS ISO 6779:2019 Test conditions for vertical internal type broaching machines. Testing of accuracy

AENOR

  • UNE 15317:2004 Surface grinding machines with two columns. Machines for grinding slideways. Test conditions. Testing of the accuracy.
  • UNE 20700-11:1991 SEMICONDUCTOR DEVICES. PART 11: SECTIONAL SPECIFICATION FOR DISCRETE DEVICES.

RO-ASRO

  • STAS SR ISO 2772-2:1996 Test conditions for box type vertical drilling machines - Testing of the accuracy - Part 2: Practicai test
  • STAS SR ISO 2772-1:1996 Test conditionc for box type vertical drilling machines - Testing of the accuracy - Part 1: Geometrical tests

Japanese Industrial Standards Committee (JISC)

  • JIS C 7021:1977 Environmental testing methods and endurance testing methods for discrete semiconductor devices
  • JIS B 7139-2:2008 Stereomicroscopes -- Part 2: Testing of stereomicroscopes

KR-KS

  • KS C IEC 60747-5-2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices
  • KS B ISO 13041-3-2018 Test conditions for numerically controlled turning machines and turning centres — Part 3: Geometric tests for machines with inverted vertical workholding spindles
  • KS C IEC 60747-6-2021 Semiconductor devices — Part 6: Discrete devices — Thyristors
  • KS C IEC 60747-7-2017 Semiconductor devices-Discrete devices-Part 7:Bipolar transistors
  • KS C IEC 60747-5-3-2020 Discrete semiconductor devices and integrated circuits —Part 5-3: Optoelectronic devices — Measuring methods
  • KS C IEC 60747-2-2021 Semiconductor devices — Part 2: Discrete devices — Rectifier diodes
  • KS C IEC 60747-7-2022 Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
  • KS C IEC 60747-8-2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors

ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc.

CZ-CSN

American National Standards Institute (ANSI)

RU-GOST R

  • GOST 28624-1990 Semiconductor devices. Part 11. Sectional specification for discrete devices

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

HU-MSZT

GSO

ES-UNE

  • UNE-EN 60747-5-5:2011/A1:2015 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2015.)
  • UNE-EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods. (Endorsed by AENOR in October of 2001.)
  • UNE-EN 60747-5-5:2011 Semiconductor devices - Discrete devices -- Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2011.)
  • UNE-EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (Endorsed by AENOR in June of 2012.)
  • UNE-EN 60747-5-3:2001/A1:2002 Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods (Endorsed by AENOR in November of 2002.)
  • UNE 15302-2:2004 ERRATUM Manually controlled milling machines with table of fixed height. Test conditions. Testing of the accuracy. Part 2: Machines with vertical spindle.

German Institute for Standardization

  • DIN EN 60747-15:2012-08 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (IEC 60747-15:2010); German version EN 60747-15:2012 / Note: DIN EN 60747-15 (2004-08) remains valid alongside this standard until 2014-01-20.

SE-SIS

NO-SN

  • NS 5026-1982 Test conditions for vertical turning and boring lathes with one or two columns - Testing of accuracy
  • NS 5025-1982 Test conditions for vertical turning and boring lathes with one or two columns - Testing of accuracy - General introduction

International Organization for Standardization (ISO)

  • ISO 2773:2023 Test conditions for pillar type vertical drilling machines

VN-TCVN

  • TCVN 6164-1996 Principles for the establishment of hierarchy schemes for measuring instruments