Testing of Discrete Devices
Testing of Discrete Devices, Total:220 items.
The international standard classification for "Testing of Discrete Devices" includes: Space systems and operations , Aerospace electric equipment and systems , Semiconductor devices in general , Optoelectronics. Laser equipment , Diodes , Semiconductor devices , Transistors .
The Chinese standard classification for "Testing of Discrete Devices" includes: Technical Management , Computer application , Electronic components , Semiconductor discrete devices in general , Optoelectronic device assembly , Semiconductor rectifier devices , Semiconductor triode , Laser device .
Professional Standard - Electron
- SJ/T 10149-1991 Graphic base of electronic components graphics of semiconductor discrete device
- SJ/T 11089-1996 Letter symbols for discrete semiconductor components
- SJ/T 9533-1993 Grading standard of quality for semiconductor discrete devices
- SJ/T 11591.4.2.1-2016 Stereoscopic display devices.Part 4-2-1: Measuring methods for autostereoscopic displays.Optical and Electro-optical
- SJ/T 11874-2022 Stress test procedures for semiconductor discrete devices used in electric vehicles
- SJ/T 11820-2022 Technology requirements and test methods for discrete semiconductor DC parameters test instruments
- SJ 20233-1993 Verification regulation of model IMPACT-II semiconductor discrete device test sysytem
- SJ 2849-1988 Construction dimensions for package parts of discrete semiconductor devices
Professional Standard - Aerospace
- QJ 3048-1998 Specifications for Development of Testing Software in Device Testing Station
- QJ 787-1983 Semiconductor Discrete Devices - Specifications for Screening
- QJ 1511A-1998 Semiconductor Discrete Devices - Specifications for Acceptance
未注明发布机构
- GJB 33A-1997 General Specification for Semiconductor Discrete Devices
- GJB 128A-1997 Semiconductor discrete device test methods
Military Standard of the People's Republic of China-General Armament Department
- GJB 3164-1998 Semiconductor discrete device packaging specifications
- GJB/Z 10-1989 Semiconductor discrete device series type spectrum
- GJB 33B-2021 General Specification for Semiconductor Discrete Devices
- GJB 128B-2021 Semiconductor discrete device test methods
- GJB 33-1985 General Specification for Semiconductor Discrete Devices
- GJB 128-1986 Aerial photographic specification for military topographic mapping
National Metrological Verification Regulations of the People's Republic of China
- JJG(电子) 310002-2006 Specification for verification of DC parameter testers for semiconductor discrete devices
- JJG(电子) 310003-2006 Specification for verification of capacitor parameter testers for semiconductor discrete devices
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 15651.3-2003 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- GB/T 12560-1999 Semiconductor devices --Sectional specification for discrete devices
- GB/T 15651-1995 Semiconductor devices Discrete devices and integrated circuits Part 5: Optoelectronic devices
- GB/T 11499-2001 Letter symbols for discrete semiconductor devices
- GB/T 7581-1987 of outlines for semiconductor discrete devices
- GB/T 20516-2006 Semiconductor devices - Discrete devices - Part 4: Microwave devices
- GB/T 6351-1998 Semiconductor devices--Discrete devices Part 2:Rectifier diodes Section One--Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rate
- GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
- GB/T 4586-1994 Semiconductor devices-Discrete devices-Part 8: Field-effect transistors
- GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
工业和信息化部
- SJ/T 11591.4.1.1-2016 Stereoscopic display devices Part 4-1-1: Measurement methods for glasses-type stereoscopic display devices - Optics and optoelectronics
Shaanxi Provincial Standard of the People's Republic of China
- DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers
ES-AENOR
- UNE 20-700 Pt.11-1991 Semiconductor devices. Part 11:Sectional specification for discrete devices
International Electrotechnical Commission (IEC)
- IEC 60747-11:1985 Semiconductor devices. Discrete devices. Part 11 : Sectional Specification for discrete devices
- IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
- IEC 60747-5-3:1997 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- IEC 60747-4:2001 Semiconductor devices - Discrete devices - Part 4: Microwave devices
- IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- IEC 60747-1:1983 Semiconductor devices. Discrete devices. Part 1 : General
- IEC 60747-6:1983 Semiconductor devices. Discrete devices. Part 6 : Thyristors
- IEC 60747-7:1988 Semiconductor discrete devices and integrated circuits; part 7: bipolar transistors
- IEC 60747-5-5:2013 Semiconductor devices.Discrete devices.Part 5-5: Optoelectronic devices.Photocouplers
- IEC 60747-7:2010+AMD1:2019 CSV Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC 60747-7:2010/AMD1:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC 60747-5-5:2007/AMD1:2013 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
- IEC 60747-7:2019 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC 60747-11:1985/AMD1:1991 Semiconductor devices; part 11: sectional specification for discrete devices; amendment 1
- IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
- IEC 60747-14-4:2011 Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
- IEC 60747-5-3:1997+AMD1:2002 CSV Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC 60747-2:1983 Semiconductor devices. Discrete devices. Part 2 : Rectifier diodes
- IEC 60747-5-3:1997/AMD1:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- IEC 60747-8:2010+AMD1:2021 CSV Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- IEC 60747-5-5:2007+AMD1:2013 CSV Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- IEC 60747-8:1984 Semiconductor devices. Discrete devices. Part 8 : Field-effect transistors
- IEC 60747-8:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- IEC 60747-8:2010/AMD1:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- IEC 60747-5:1992 Semiconductor devices; discrete devices and integrated circuits; part 5: optoelectronic devices
Korean Agency for Technology and Standards (KATS)
- KS C IEC 60747-11:2002 Discrete semiconductor devices-Part 11:Sectional specification for discrete devices
- KS C IEC 60747-11-2022 Discrete semiconductor devices-Part 11:Sectional specification for discrete devices
- KS C IEC 60747-11-2002(2022) Discrete semiconductor devices-Part 11:Sectional specification for discrete devices
- KS C IEC 60747-11-2002(2017) Discrete semiconductor devices-Part 11:Sectional specification for discrete devices
- KS C IEC 60747-5-3:2004 Semiconductor devices-Discrete devices-Part 5-3:optoelectronic devices-Measuring method
- KS C IEC 60747-5:2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices
- KS C IEC 60747-1:2004 Semiconductor devices-Discrete devices and integrated circuits-Part 1:General
- KS B ISO 13041-3:2018 Test conditions for numerically controlled turning machines and turning centres — Part 3: Geometric tests for machines with inverted vertical workholding spindles
- KS C IEC 60747-6-2006(2016) Semiconductor Devices-Discrete devices-Part 6:Thyristors
- KS F 2235-2001(2016) Field measurements of sound insulation of building facades and facade elements
- KS C IEC 60747-6:2021 Semiconductor devices — Part 6: Discrete devices — Thyristors
- KS C IEC 60747-5-3:2020 Discrete semiconductor devices and integrated circuits —Part 5-3: Optoelectronic devices — Measuring methods
- KS C IEC 60747-10:2004 Semiconductor devices-Part 10:Generic specification for discrete devices and integrated circuits
- KS C IEC 60747-2:2021 Semiconductor devices — Part 2: Discrete devices — Rectifier diodes
- KS C IEC 60747-7:2022 Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
- KS C IEC 60747-8:2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
- KS B ISO 2773-2-2007(2012) Test conditions for pillar type vertical drilling machines-Testing of the accuracy-Part 2:Practical test
Association Francaise de Normalisation
- NF C96-015*NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15 : isolated power semiconductor devices
- NF E60-160-2*NF ISO 13041-2:2020 Test conditions for numerically controlled turning machines and turning centres - Part 2 : geometric tests for machines with a vertical workholding spindle
- NF C96-005:1994 Discrete devices and integrated circuits. Part 5 : optoelectronic devices.
- NF C96-011:1989 Electronic Components Semiconductor devices Part 11:Sectional specification for discrete devices
- NF C96-005-3/A1*NF EN 60747-5-3/A1:2002 Discrete semiconductor devices and integrated circuits - Partie 5-3 : optoelectronic devices - Measuring methods
- NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15: isolated semiconductor power devices
- NF EN 60747-5-3/A1:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: optoelectronic devices - Measurement methods
- NF EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Part 5-3: optoelectronic devices - Measurement methods
- NF C96-005-3*NF EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Part 5-3 : optoelectronic devices - Measuring methods
- NF C96-005-5*NF EN 60747-5-5:2012 Semiconductor devices - Discrete devices - Part 5-5 : optoelectronic devices - Photocouplers
- NF E60-132-2*NF ISO 2773-2:1997 Test conditions for pillar type vertical drilling machines. Testing of the accuracy. Part 2 : practical test.
- NF C96-015:2005 Discrete semiconductor devices - Part 15: isolated power semiconductor devices
European Committee for Electrotechnical Standardization(CENELEC)
- EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
SCC
- BS 6493-1-1.5:1985 Semiconductor devices: discrete devices and integrated circuits. Discrete devices.-Recommendations for optoelectronic devices
- AS 2547.1.5:1986 Semiconductor devices, Part 1.5: Discrete devices - Optoelectronic devices
- IEC 60747-4:1991+AMD1:1993+AMD2:1999 CSV Semiconductor devices - Discrete devices - Part 4: Microwave devices
- BS 6493-1.2:1984 Semiconductor devices. Discrete devices-Recommendations for rectifier diodes
- BS 6493-1.7:1989 Semiconductor devices. Discrete devices-Recommendations for bipolar transistors
- AS 2547.1.1:1986 Semiconductor devices, Part 1.1: Discrete devices - General
- BS EN 60747-5-5:2011+A1:2015 Semiconductor devices. Discrete devices-Optoelectronic devices. Photocouplers
- AS 2547.1.6:1986 Semiconductor devices, Part 1.6: Discrete devices - Thyristors
- BS 6493-1.8:1985 Semiconductor devices. Discrete devices-Recommendations for field-effect transistors
- BS 6493-1.6:1984 Semiconductor devices. Discrete devices-Recommendations for thyristors
- IEC 60747-1:1983/AMD3:1996 Amendment 3 - Semiconductor devices - Discrete devices - Part 1: General
- DANSK DS/EN 60747-5-5:2011 Semiconductor devices – Discrete devices – Part 5-5: Optoelectronic devices – Photocouplers
- DANSK DS/EN 60747-5-5/A1:2011 Semiconductor devices – Discrete devices – Part 5-5: Optoelectronic devices – Photocouplers
- CEI EN 60747-5-5/A1:2012 Semiconductor devices - Discrete devices Part 5-5: Optoelectronic devices - Photocouplers
- DANSK DS/EN 60747-5-3:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- DANSK DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- AS 2547.1.7:1989 Semiconductor devices, Part 1.7: Discrete devices - Bipolar transistors
- AS 2547.1.11:1986 Semiconductor devices, Part 1.11: Sectional specification for discrete devices (QC 750 000)
- CEI EN 60747-5-3:2002 Discrete semiconductor devices and integrated circuits Part 5-3: Optoelectronic devices - Measuring methods
- CEI EN 60747-5-5:2012 Semiconductor devices - Discrete devices Part 5-5: Optoelectronic devices - Photocouplers
- AS 2547.1.2:1986 Semiconductor devices, Part 1.2: Discrete devices - Rectifier diodes
- IEC 60747-5:1984 Semiconductor devices - Discrete devices and integrated circuits - Part 5: Optoelectronic devices
- CEI EN 60747-15:2012 Semiconductor devices - Discrete devices Part 15: Isolated power semiconductor devices
- IEC 60747-6:1983/AMD2:1994 Amendment 2 - Semiconductor devices - Discrete devices - Part 6: Thyristors
- IEC 60747-6:1983/AMD1:1991 Amendment 1 - Semiconductor devices - Discrete devices - Part 6: Thyristors
- IEC 60747-10:1984 Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits
- AS 2547.1.8:1986 Semiconductor devices, Part 1.8: Discrete devices - Field-effect transistors
- CEI EN 62047-11:2014 Semiconductor devices - Micro-electromechanical devices Part 11: Test method for coefficients of linear thermal expansion of freestanding materials for micro-electromechanical systems
- BS 6493-1.4:1992 Semiconductor devices. Discrete devices-Recommendations for microwave diodes and transistors-Recommendations for microwave devices
- DANSK DS/EN 12681-2:2017 Founding – Radiographic testing – Part 2: Techniques with digital detectors
- IEC 60747-7:1988/AMD1:1991 Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC 60747-7:1988/AMD2:1994 Amendment 2 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC 60747-2:1983/AMD2:1993 Amendment 2 - Semiconductor devices - Discrete devices - Part 2: Rectifier diodes
- IEC 60747-2:1983/AMD1:1992 Amendment 1 - Semiconductor devices - Discrete devices - Part 2: Rectifier diodes
- IEC 60747-5:1992/AMD2:1995 Amendment 2 - Semiconductor devices - Discrete devices and integrated circuits - Part 5: Optoelectronic devices
Danish Standards Foundation
- DS/IEC 747-11:1987 Semiconductor devices. Part 11: Sectional Specification for discrete devices
- DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices
- DS/EN 60747-5-3/A1:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- DS/EN 60747-5-5:2011 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- DS/IEC 747-2:1985 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes
- DS/EN 60747-5-3:2002 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
CENELEC - European Committee for Electrotechnical Standardization
- EN 60747-15:2004 Discrete semiconductor devices Part 15: Isolated power semiconductor devices
TH-TISI
- TIS 1863-2009 Semiconductor devices.discrete devices
- TIS 2126-2002 Semiconductor devices.part 10: generic specification for discrete devices and integrated circuits
- TIS 2121-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors
PL-PKN
- PN T01204-1990 Semiconductor devices Sectional specification for discrete devices
- PN T01204-A1-1990 Semiconductor devices Sectional specification for discrete devices Amendment 1
- PN T01103-1992 Semiconductor devices. Generic specification for discrete devices and integrated circuits
- PN T01203-1989 Przyrz?dy pó?przewodnikowe Przyrz?dy dyskretne Diody sygna?owe (z w??czeniem diod prze??czaj?cych) i diodv stabilizuj?ce
British Standards Institution (BSI)
- BS 6493-1.1:1984 Semiconductor devices - Part 1: Discrete devices - Section 1.1 General
- BS ISO 2773:2024 Test conditions for pillar type vertical drilling machines. Testing of accuracy
- BS EN 60747-5-3:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. Measuring methods
- BS IEC 60747-5-3:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. Measuring methods
- BS EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Optoelectronic devices - Measuring methods
- BS 6493-1.5:1992(2003) Semiconductor devices — Part 1 : Discrete devices — Section 1.5 Recommendations for optoelectronic devices
- BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
- BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
- BS EN 60747-5-5:2011 Semiconductor devices. Discrete devices. Optoelectronic devices. Photocouplers
- BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors
- BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
- BS IEC 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
- BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
- BS EN 308:2022 Heat exchangers. Test procedures for establishing performance of air to air heat recovery components
- BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
- BS IEC 60747-6:2016 Semiconductor devices Part 6 : Discrete devices — Thyristors
- 22/30449725 DC BS ISO 6779 Test conditions for vertical internal type broaching machines. Testing of accuracy
- BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
- BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
- BS EN 60747-5-3:2001(2003) Discretesemiconductor devices and integrated circuits — Part 5 - 3 : Optoelectronic devices — Measuring methods
- BS ISO 6481:2019 Test conditions for vertical surface type broaching machines. Testing of accuracy
- BS IEC 60747-2:2000 Discrete semiconductor devices and integrated circuits - Rectifier diodes
- BS ISO 19744:2020 Test conditions for numerically controlled broaching machines. Testing of accuracy. Vertical surface type broaching machines
- BS ISO 6779:2023 Test conditions for vertical internal type broaching machines. Testing of accuracy
- BS ISO 6779:2019 Test conditions for vertical internal type broaching machines. Testing of accuracy
AENOR
- UNE 15317:2004 Surface grinding machines with two columns. Machines for grinding slideways. Test conditions. Testing of the accuracy.
- UNE 20700-11:1991 SEMICONDUCTOR DEVICES. PART 11: SECTIONAL SPECIFICATION FOR DISCRETE DEVICES.
RO-ASRO
- STAS SR ISO 2772-2:1996 Test conditions for box type vertical drilling machines - Testing of the accuracy - Part 2: Practicai test
- STAS SR ISO 2772-1:1996 Test conditionc for box type vertical drilling machines - Testing of the accuracy - Part 1: Geometrical tests
Japanese Industrial Standards Committee (JISC)
- JIS C 7021:1977 Environmental testing methods and endurance testing methods for discrete semiconductor devices
- JIS B 7139-2:2008 Stereomicroscopes -- Part 2: Testing of stereomicroscopes
KR-KS
- KS C IEC 60747-5-2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices
- KS B ISO 13041-3-2018 Test conditions for numerically controlled turning machines and turning centres — Part 3: Geometric tests for machines with inverted vertical workholding spindles
- KS C IEC 60747-6-2021 Semiconductor devices — Part 6: Discrete devices — Thyristors
- KS C IEC 60747-7-2017 Semiconductor devices-Discrete devices-Part 7:Bipolar transistors
- KS C IEC 60747-5-3-2020 Discrete semiconductor devices and integrated circuits —Part 5-3: Optoelectronic devices — Measuring methods
- KS C IEC 60747-2-2021 Semiconductor devices — Part 2: Discrete devices — Rectifier diodes
- KS C IEC 60747-7-2022 Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
- KS C IEC 60747-8-2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc.
- ASHRAE 164.2-2012 Method of Test for Residential Self-Contained Humidifiers
CZ-CSN
- CSN 35 8797 Cast.11 IEC 747-11 Z1:1993 Semiconductor device. Part 11: Standards for discrete components
- CSN 35 8797 Cast.11 IEC 747-11 ZA2:1997 Semiconductor device. Part 11: Standards for discrete components
- CSN ISO 2772-2:1993 Test conditions for box type vertical drilling machines - Testing of the accuracy - Part II: Practical test
- CSN ISO 2772-1:1993 Test conditions for box type vertical drilling machines - Testing of the accuracy - Part 1: Geometrical tests
- CSN ISO 2773-1:1994 Test conditions for pillar type vertical drilling machines - Testing of the accuracy - Part 1: Geometrical tests
- CSN ISO 2773-2:1994 Test conditions for pillar type vertical drilling machines - Testing of the accuracy Part II: Practical test
American National Standards Institute (ANSI)
- ANSI/EIA 236-C:1986 Color Coding of Discrete Semiconductor Devices
RU-GOST R
- GOST 28624-1990 Semiconductor devices. Part 11. Sectional specification for discrete devices
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JESD236-C-1986 Color Coding of Discrete Semiconductor Devices
- JEDEC EIA-236-C-1986 Color Coding of Discrete Semiconductor Devices
HU-MSZT
- MNOSZ 9954-1951 Instrument parts. Standable parts
GSO
- OS GSO IEC 60747-5-5:2014 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- GSO IEC 60747-5-5:2014 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- GSO IEC 60747-14-4:2014 Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
- OS GSO IEC 60747-5-3:2014 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- OS GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- BH GSO IEC 60747-7:2016 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- GSO IEC 60747-5-3:2014 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- BH GSO IEC 60747-15:2016 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- BH GSO IEC 60747-5-4:2016 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
- OS GSO IEC 60747-10:2014 Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits
- OS GSO IEC 60747-5-4:2014 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
- OS GSO IEC 60747-8:2014 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- OS GSO IEC 60747-11:2014 Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices
- BH GSO IEC 60747-11:2016 Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices
ES-UNE
- UNE-EN 60747-5-5:2011/A1:2015 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2015.)
- UNE-EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods. (Endorsed by AENOR in October of 2001.)
- UNE-EN 60747-5-5:2011 Semiconductor devices - Discrete devices -- Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2011.)
- UNE-EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (Endorsed by AENOR in June of 2012.)
- UNE-EN 60747-5-3:2001/A1:2002 Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods (Endorsed by AENOR in November of 2002.)
- UNE 15302-2:2004 ERRATUM Manually controlled milling machines with table of fixed height. Test conditions. Testing of the accuracy. Part 2: Machines with vertical spindle.
German Institute for Standardization
- DIN EN 60747-15:2012-08 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (IEC 60747-15:2010); German version EN 60747-15:2012 / Note: DIN EN 60747-15 (2004-08) remains valid alongside this standard until 2014-01-20.
SE-SIS
- SIS SS CECC 50000-1987 Generic specification: Discrete semiconductor devices
NO-SN
- NS 5026-1982 Test conditions for vertical turning and boring lathes with one or two columns - Testing of accuracy
- NS 5025-1982 Test conditions for vertical turning and boring lathes with one or two columns - Testing of accuracy - General introduction
International Organization for Standardization (ISO)
- ISO 2773:2023 Test conditions for pillar type vertical drilling machines
VN-TCVN
- TCVN 6164-1996 Principles for the establishment of hierarchy schemes for measuring instruments
Semiconductor devices. Microelectromechanical devices. Bending test methods for thin film materials,Verification Regulations for DC Parameter Tester of Semiconductor Discrete Devices,Discrete Device Parameter Tester,Testing of Discrete Devices