GB/T 20516-2006 in English
VALIDSemiconductor devices - Discrete devices - Part 4: Microwave devices
- Issued on:2006-10-10
- Implemented on:2007-02-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
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《GB/T 20516-2006半导体器件 分立器件 第4部分：微波器件》由TC78（全国半导体器件标准化技术委员会）归口，主管部门为工业和信息化部（电子）。
本标准等同采用国际标准IEC60747-4：2001《半导体器件 分立器件 第4部分：微波器件》，内容包括：总则，变容二极管、阶跃二极管和快速开关肖特基二极管，混频二极管和检波二极管，雪崩二极管，体效应二极管，双极型晶体管，场效应晶体管，评价和可靠性-特殊要求等内容。
Scope
This standard gives standards for the following categories of discrete devices: - varactor diodes, step diodes and fast switching Schottky diodes (used for tuning, up-converter or harmonic doubler, switches, limiters, Phaser, parametric amplifier, etc.) - Mixer and detector diodes - Avalanche diodes (for harmonic generators, amplifiers, etc.) - Body effect diodes (for oscillators, amplifiers, etc.) - Bipolar transistors (for amplifiers, oscillators, etc.) - field effect transistors (for amplifiers, oscillators, etc.)
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