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high-mass resolution glow discharge mass spectrometry introduction standard overview glow discharge mass spectrometry trace elements multiple trace elements sensitive trace element analysis technology good linear static human dimensions machine tools-method
GB/T 32651-2016 in English

GB/T 32651-2016 in English

VALID

Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry

  • Issued on:2016-04-25
  • Implemented on:2016-11-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00
Standard No: GB/T 32651-2016
Document status: VALID
Title in English: Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
Title in Chinese: 采用高质量分辨率辉光放电质谱法测量太阳能级硅中痕量元素的测试方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2016-04-25
Implemented on: 2016-11-01
Professional Classification: GB-National Standard
Related Keywords: high-mass resolution glow discharge mass spectrometry introduction
standard overview glow discharge mass spectrometry
trace elements
multiple trace elements
sensitive trace element analysis technology
Related Topics: Mass spectral peak resolution
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GBT32651
GB/T 32651-2016
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《GB/T 32651-2016采用高质量分辨率辉光放电质谱法测量太阳能级硅中痕量元素的测试方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。


Introduction

1. Standard Overview

Glow Discharge Mass Spectrometry (GDMS) is a highly sensitive trace element analysis technology, especially suitable for the detection of trace elements in semiconductor materials and solar-grade silicon. GB/T 32651-2016 standard specifies in detail the technical requirements and experimental steps for the determination of multiple trace elements in solar-grade silicon using this method.

2. Technical Background

With the rapid development of the photovoltaic industry, the demand for solar-grade silicon materials has increased dramatically. However, trace impurities in silicon materials can seriously affect the conversion efficiency and long-term stability of solar cells. Therefore, it is particularly important to establish a set of accurate and reliable trace element analysis methods. GB/T 32651-2016 standard is based on this demand, combined with the high sensitivity and high resolution characteristics of GDMS technology, to develop a test method suitable for a variety of silicon morphology samples.

3. Comparison of standard frameworks

Standard dimensions GB/T 32651-2016 International similar standards Advantage analysis
Scope of application Quantitative analysis of multiple trace elements in solar-grade silicon Mainly for semiconductor materials Extended to photovoltaic industry
Detection limit 5μg/kg ~50mg/kg Usually 1-10μg/kg Wider dynamic range
Analysis equipment Mass resolution>3500 Usually required>2000 Higher detection accuracy

4. Implementation suggestions

4.1 Precautions for sample preparation

During the sample processing, special attention should be paid to the following points:
- Ensure that the sample surface is smooth and free of impurities
- Use special cleaning agents (such as deionized water and isopropyl alcohol) to clean the sample
- Avoid any possible secondary contamination

4.2 Quantitative analysis steps

In order to ensure the accuracy of the analysis results, it is recommended to follow the following steps:
1. Use high-purity silicon standard samples to establish the relative sensitivity factor (RSF)
2. Determine the trace element content in the sample under the same conditions
3. Calculate and record the mass fraction of each element

4.3 Quality Control Measures

To ensure long-term accuracy, it is recommended that:
- Use standard samples for instrument calibration regularly
- Analyze at least one blank sample and one control sample in each batch of samples
- Trace back abnormal results and record the reasons

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