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semiconductor optoelectronic devices light-emitting diodes light-emitting diodes gb/t optoelectronic devices blank detail specification application low-power light-emitting diodes examine standard automatic equipments dry chemical hemoglobin
GB/T 36359-2018 in English

GB/T 36359-2018 in English

VALID

Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes

  • Issued on:2018-06-07
  • Implemented on:2019-01-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $220.00
$214.00
Standard No: GB/T 36359-2018
Document status: VALID
Title in English: Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes
Title in Chinese: 半导体光电子器件 小功率发光二极管空白详细规范
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2018-06-07
Implemented on: 2019-01-01
ICS Classification: 31.260-Optoelectronics. Laser equipment
Chinese Classification: L53-Semiconductor emitting device
Professional Classification: GB-National Standard
Related Keywords: semiconductor optoelectronic devices
light-emitting diodes
light-emitting diodes gb/t
optoelectronic devices blank detail specification
application low-power light-emitting diodes
Related Topics: Optoelectronics
led
LED blank detail
Optoelectronics
Blank details of power light-emitting diodes in semiconductor optoelectronic devices
Optoelectronic device core
two-photon luminescence
semiconductor photoluminescence
photon device
white light method
used white light
photon device
power photon
Functional Optoelectronics
two-photon power
Electrode Conductivity
sub-optoelectronic device
Optoelectronic devices
Ultra Low Power Electronics
three-photon luminescence
volume photon
semiconductor
GBT36359
GB/T 36359-2018
The absorbance of the sample is less than that of the blank
Photoelectron hole efficiency
Medical X-ray luminous power
Sensing angle of photodiode
Power semiconductor device breakdown voltage
Semiconductor laser device details
Semiconductor light emitting device metrology

《GB/T 36359-2018半导体光电子器件 小功率发光二极管空白详细规范》由339-1(工业和信息化部(电子))归口,主管部门为工业和信息化部(电子)。


Introduction

Interpretation of the National Standard of the People's Republic of China GB/T 36359—2018

1. Background and significance of the standard

GB/T 36359—2018 "Blank Detailed Specification for Low-Power Light Emitting Diodes in Semiconductor Optoelectronic Devices" is a standard formulated to regulate the production and testing of low-power light-emitting diodes in semiconductor optoelectronic devices. This standard combines the relevant specifications of the International Electrotechnical Commission (IEC) and incorporates China's national conditions and industry needs, aiming to improve product quality and technical level.


2. Comparative analysis of standard frameworks

Standard dimensions GB/T 36359—2018 IEC 60191-2-DB-2012 SJ/T 11394—2009
Scope of application Low-power light-emitting diodes, including infrared and ultraviolet types Mechanical standardization of semiconductor devices Test methods for semiconductor light-emitting diodes
Core requirements Photoelectric characteristics, environmental adaptability, mechanical strength, etc. Appearance dimensions, packaging process Test methods and quality assessment
Technological evolution Combining international standards to adapt to domestic industrial development needs Focus on mechanical standardization Highlight the systematic nature of test methods

3. Analysis of key technical indicators

Case analysis: Photoelectric characteristics of low-power light-emitting diodes

GB/T 36359-2018 puts forward strict requirements on the photoelectric characteristics of low-power light-emitting diodes, including parameters such as forward voltage (VF), reverse current (IR), average luminous intensity (IL), and half-intensity angle (θ½). For example:

  • Forward voltage: maximum value does not exceed 5V
  • Reverse current: at rated reverse voltage, leakage current does not exceed 0.1μA
  • Average luminous intensity: typical value range is 10mcd~1000mcd

4. Implementation suggestions and precautions

To ensure the effective implementation of the standard, it is recommended that:

  1. Manufacturers should establish a sound quality control system and strictly carry out production and testing in accordance with the requirements of the standard.
  2. Testing institutions need to be equipped with advanced testing equipment, such as spectrum analyzers, environmental simulation chambers, etc.
  3. During the product design stage, electrostatic sensitivity issues should be fully considered and clearly stated in the packaging and labeling.

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