Optoelectronics
Optoelectronics, Total:172 items.
The international standard classification for "Optoelectronics" includes: Chemical analysis , Optical measuring instruments , Semiconductor devices , Other semiconductor devices , Measurement of electrical and magnetic quantities , Optoelectronics. Laser equipment , Other standards related to quality , Fiber optic interconnecting devices .
The Chinese standard classification for "Optoelectronics" includes: Basic standards and general methods , Electron optics and other physical optics instrument , Optoelectronic device assembly , Semiconductor emitting device , Integrated test system , Carrier communication equipment , Semiconductor discrete devices in general , Technical management , Technical management , Technical management , Microwave and millimeter wave diode and triode , Laser device .
Group Standards of the People's Republic of China
- T/QGCML 3114-2024 Process specifications for welding equipment for metal shells of optoelectronic devices
- T/ZZB 1373-2019 7N photoelectric class hyperpure ammonia
- T/ZSA 39-2020 Characterization of Graphene - Work function - Ultraviolet photoelectron spectroscopy (UPS) method
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 30704-2014 Surface chemical analysis―X-ray photoelectron spectroscopy―Guidelines for analysis
- GB/T 21194-2007 Generic reliability assurance requirements for optoelectronic devices used in telecommunications equipment
- GB/T 36359-2018 Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes
- GB/T 15651-1995 Semiconductor devices Discrete devices and integrated circuits Part 5: Optoelectronic devices
- GB/T 19500-2004 General rules for X-ray photoelectron spectroscopic analysis method
- GB/T 36229-2018(英文版) "Methode und Indikatoren zur Zuverl ssigkeitsbewertung von aktiven photoelektronischen Schutzeinrichtungen"
- GB/T 15651.5-2024 Semiconductor devices—Part 5-5: Optoelectronic devices—Photocouplers
- GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices
- GB/T 28632-2012 Surface chemical analysis—Auger electron spectroscopy and X-ray photoelectron spectroscopy—Determination of lateral resolution
- GB/T 15651.6-2023 Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes
- GB/T 31472-2015 Standard guide to charge control and charge referencing techniques in X-ray photoelectron spectroscopy
- GB/T 12565-1990 Semiconductor devices Sectional specification for optoelectronic devices
- GB/T 15651.7-2024 Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors
- GB/T 25184-2010 Verification method for X-ray photoelectron spectrometers
- GB/T 36360-2018 Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes
Military Standard of the People's Republic of China-General Armament Department
- GJB 33/19-2011 Semiconductor optoelectronic device.Detail specification for type GH302-4 photocoupler
- GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
- GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
- GJB/Z 40.6-1993 Military vacuum electronic devices series spectrum vacuum optoelectronic devices
- GJB 33/21-2011 Semiconductor optoelectronic device.Detail specification for GD310A series photocopier
- GJB 33/22-2011 Semiconductor optoelectronic device.Detail specification for type GO103 photocoupler
- GJB 8119-2013 General specification for semiconductor optoelectronic device
- GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
- GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
- GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
- GJB 33/23-2011 Semiconductor optoelectronic device.Detail specification for type GH3201Z-4 photocoupler
- GJB 33/20-2011 Semiconductor optoelectronic device.Detail specification for type GH302 photocoupler
Professional Standard - Electron
- SJ/T 11400-2009 Semiconductor optoelectronic devices - Blank detail specification for lower-power light-emitting diodes
- SJ 50033/110-1996 Semiconductor optoelectronic devices - Detail specification for Type GR9413 infrared light emitting diode
- SJ 50033/114-1996 Semiconductor optoelectronic devices - Detail specification for Type GD3283Y position sensitive detector
- SJ 50033/138-1998 Semiconductor optoelectronic devices - Detail specification for yellow light-emitting diode for Type GF318
- SJ 50033/111-1996 Semiconductor optoelectronic devices - Detail specification for Type GT16 Si. NPN phototransistor
- SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
- SJ 50033/143-1999 Semiconductor optoelectronic devices - Detail specification for Type GF1120 red emitting diode
- SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
- SJ 50033/142-1999 Semiconductor optoelectronic devices-Detail specification for Type GF4112 green emitting diode
- SJ/T 11393-2009 Semiconductor optoelectronic devices - Blank detail specification for power light-emitting diodes
- SJ/T 11405-2009 Semiconductor optoelectronic devices for fibre optic system applications-Part 2:Measuring methods
- SJ 50033/139-1998 Semiconductor optoelectronic devices-Detail specification for green light-emitting diode for Type GF4111
- SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
- SJ 50033/137-1997 Semiconductor discrete devices-Detail specification for orang-red light emitting diode for Type GF216
- SJ 50033/113-1996 Semiconductor optoelectronic devices - Detail specification for Type GD3252Y photodiodes
- SJ/T 10458-1993 Standard guide for specimen handling in auger electron spectroscopy and X-ray photoelectron spectroscopy
- SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
- SJ 50033/58-1995 Semiconductor optoelectronic device - Detail specification for green light emitting diode for Type GF413
- SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
- SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
- SJ 50033/112-1996 Semiconductor optoelectronic devices-Detail specification for Type GD3251Y photodiodes
- SJ 50033/136-1997 Semiconductor discrete devices - Detail specification for red light emitting diode for Type GF116
- SJ 50033/99-1995 Semiconductor optoelectronic devices-Detail specification for o/G double colour light emitting diode for Type GF511
- SJ/T 10714-1996 Standard practice for checking the operation characteristics of X-ray photoelectron spectrometers
National Metrological Verification Regulations of the People's Republic of China
- JJG(电子) 05001-1987 RCJ-3 Insulation Resistance Tester Trial Verification Regulations
- JJG(电子) 10001-1988 Trial Verification Regulations for Laser Power Meter
- JJG(电子) 02009-1995 Verification Regulations for Analog Electronic Voltmeter
- JJG(电子) 11005-1988 18.6MHz and above frequency band electronic oscillator trial verification regulations
- JJG(电子) 30901-2006 Verification Regulations for Spectrum Analyzers
- JJG(电子) 12022-1989 VS13 type black and white TV electronic test card generator verification regulations
- JJG(电子) 30902-2006 Specification for verification of absolute spectral response rate of photodetectors
National Metrological Technical Specifications of the People's Republic of China
- JJF(电子) 30901-2006 Polarization Maintaining Fiber Crosstalk Calibration Specifications
- JJF(电子) 19-1982 Verification method of GS-5A electronic tube tester
- JJF(电子) 01-1982 Verification method of general electronic counter
- JJF(电子) 30904-2006 Specification for calibration of tunable laser
- JJF(电子) 30902-2006 Polarization-maintaining fiber beat length calibration specification
- JJF(电子) 30903-2006 Specification for calibration of linewidth of single longitudinal mode laser
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers
- GB/T 33768-2017 Rfeliability test method for optoelectronic devices used in telecommunications
Professional Standard - Post and Telecommunication
- YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: measuring methods
- YD/T 2342-2011 Reliability Test Method for Optoelectronic Devices Used in Telecommunications
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes
- GB/T 41072-2021 Surface chemical analysis - Electron spectroscopies - Guidelines for ultraviolet photoelectron spectroscopy analysis
Korean Agency for Technology and Standards (KATS)
- KS D 2518-1982 Methods for photoelectric emission spectrochemical analysis of cadmium metal
- KS D 2518-2005 Methods for photoelectric emission spectrochemical analysis of cadmium metal
- KS C 7631-1998(2020) Electronic starters for fluorescent lamps
- KS C 7631-1998 Electronic starters for fluorescent lamps
- KS C 7631-2020 Electronic starters for fluorescent lamps
- KS D 1852-2005 Methods for photoelectric emission spectrochemical analysis of aluminium and aluminium alloys
- KS D ISO 15472-2003(2018) Surface chemical analysis - X-ray photoelectron spectroscopy - Calibration of energy scale
- KS C IEC 60747-5:2004 Semiconductor devices-Discrete devices-Part 5:Optoelectronic devices
- KS D ISO 18118:2005 Surface chemical analysis-Auger electron spectroscopy and X-ray photoelectron spectroscopy-Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials
Institute of Interconnecting and Packaging Electronic Circuits (IPC)
- IPC 0040-2003 Optoelectronics Assembly and Packaging Technology
Association Francaise de Normalisation
- NF C96-550/A1:1980 Optoelectronic Special measurement methods for optoelectronic devices
- NF X21-061:2008 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution.
- NF V04-040-3:1997 Milk. Enumeration of somatic cells. Part 3 : fluoro-opto-electronic method.
- NF T01-032:1976 Molecular absorption spectrophotometry. Optical cells.
- NF X21-071:2011 Surface Chemical Analysis - X-ray photoelectron Spectroscopy - Guidelines for analysis.
International Organization for Standardization (ISO)
- ISO 9211-2:2010 Optics and photonics - Optical coatings - Part 2: Optical properties
- ISO 16129:2012 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- ISO 16129:2018 Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- ISO 18516:2006 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution
- ISO/TR 18392:2005 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for determining backgrounds
- ISO 14524:1999 Photography - Electronic still-picture cameras - Methods for measuring opto-electronic conversion functions (OECFs)
- ISO 10810:2019 Surface chemical analysis — X-ray photoelectron spectroscopy — Guidelines for analysis
- ISO 24237:2005 Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
- ISO 10810:2010 Surface chemical analysis - X-ray photoelectron spectroscopy - Guidelines for analysis
- ISO 18118:2004 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials
- ISO 18118:2015 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials
British Standards Institution (BSI)
- BS ISO 16129:2012 Surface chemical analysis. X-ray photoelectron spectroscopy. Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- BS ISO 16129:2018 Surface chemical analysis. X-ray photoelectron spectroscopy. Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- BS ISO 18516:2006 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution
- BS ISO 21270:2005 Surface chemical analysis - X-ray photoelectron and Auger electron spectrometers - Linearity of intensity scale
- BS ISO 10810:2019 Surface chemical analysis. X-ray photoelectron spectroscopy. Guidelines for analysis
- BS ISO 14524:2000 Photography - Electronic still-picture cameras - Methods for measuring opto-electronic conversion functions (OECFs)
- BS ISO 23584-1:2009 Optics and photonics - Specification of reference dictionary - General overview on organization and structure
- BS ISO 15472:2010 Surface chemical analysis - X-ray photoelectron spectrometers - Calibration of energy scales
- BS ISO 10810:2010 Surface chemical analysis. X-ray photoelectron spectroscopy. Guidelines for analysis
- BS ISO 24237:2005 Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
- BS EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications. Specification template for essential ratings and characteristics
- BS IEC 60747-5-13:2021 Semiconductor devices. Optoelectronic devices. Hydrogen sulphide corrosion test for LED packages
- BS EN 120000:1996 Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices
American National Standards Institute (ANSI)
- ANSI/IPC 0040-2003 Optoelectronic Assembly and Packaging Technology
German Institute for Standardization
- DIN ISO 16129:2020-11 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer (ISO 16129:2018); Text in English
- DIN ISO 16129 E:2020-01 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- DIN ISO 9211-2:2012 Optics and photonics - Optical coatings - Part 2: Optical properties (ISO 9211-2:2010)
- DIN ISO 16129:2020 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer (ISO 16129:2018); Text in English
- DIN ISO 15472 E:2019-09 Surface chemical analysis - X-ray photoelectron spectrometers - Calibration of energy scales
- DIN 6800-2:2020-08 Procedures of dosimetry with probe-type detectors for photon and electron radiation - Part 2: Ionization chamber dosimetry of high energy photon and electron radiation
GSO
- BH GSO ISO 16129:2015 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- OS GSO ISO 16129:2014 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- GSO ISO 11505:2015 Surface chemical analysis -- General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry
- GSO ISO 10810:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis
- OS GSO ISO 10810:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis
- BH GSO ISO 10810:2016 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis
- GSO ISO 14701:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Measurement of silicon oxide thickness
- GSO ISO/TR 18392:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for determining backgrounds
American Society for Testing and Materials (ASTM)
- ASTM E995-16 Standard Guide for Background Subtraction Techniques in Auger Electron Spectroscopy and X-Ray Photoelectron Spectroscopy
- ASTM E996-10 Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
- ASTM E996-04 Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
- ASTM E2108-10 Standard Practice for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer
- ASTM E2108-00 Standard Practice for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer
- ASTM E2735-13 Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy (XPS) Experiments
- ASTM E2735-14 Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy 40;XPS41; Experiments
- ASTM E902-05 Standard Practice for Checking the Operating Characteristics of X-Ray Photoelectron Spectrometers
- ASTM E1217-11 Standard Practice for Determination of the Specimen Area Contributing to the Detected Signal in Auger Electron Spectrometers and Some X-Ray Photoelectron Spectrometers
- ASTM E1217-05 Standard Practice for Determination of the Specimen Area Contributing to the Detected Signal in Auger Electron Spectrometers and Some X-Ray Photoelectron Spectrometers
- ASTM E1217-00 Standard Practice for Determination of the Specimen Area Contributing to the Detected Signal in Auger Electron Spectrometers and Some X-Ray Photoelectron Spectrometers
- ASTM E2108-16 Standard Practice for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer
- ASTM E996-94(1999) Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
- ASTM E2735-14(2020) Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy (XPS) Experiments
- ASTM E996-19 Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
- ASTM E996-10(2018) Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
European Standard for Electrical and Electronic Components
- CECC MUAHAG VOL 10 IS 2-1992 Preferred Products List; OPTO Electronic Devices (En, Fr, Ge)
SCC
- 11/30230635 DC BS ISO 16129. Surface chemical analysis. X-ray photoelectron spectroscopy. Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
- DIN ISO 16129 E:2020 Draft Document - Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer (ISO 16129:2018); Text in English
- BS PD IEC TR 60747-5-12:2021 Semiconductor devices-Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
- DIN 6800-2:2020 Procedures of dosimetry with probe-type detectors for photon and electron radiation - Part 2: Ionization chamber dosimetry of high energy photon and electron radiation
- 09/30191895 DC BS ISO 10810. Surface chemical analysis. X-ray photoelectron spectroscopy. Guidelines for analysis
Defense Logistics Agency
- DLA QPL-28803-10 NOTICE 1-2008 Display, Optoelectronic, Readouts, Back Lighted Segmented, General Specification for
CZ-CSN
- CSN 34 5152 Cast.6-1988 Terminology of telecommunication engineering. Optoelectronics and information transmission by optical fibres
- CSN 35 8851-1987 Semiconductor optoelectronic devices. Nomenclature, definition and letter symbols of parameters
- CSN 35 8804-1985 Semiconductor optoelectronic devices for widely u?ed equipments. General specifications
RU-GOST R
- GOST 23340-1978 Optoelectron commutators of analog signal. Basic parameters
- GOST 23339-1978 Optoelectron switches of logic signals. Basic parameters
- GOST 27299-1987 Semiconductor optoelectronic devices. Terms, definitions and letter symbols of parameters
International Electrotechnical Commission (IEC)
- IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
- IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
- IEC 60747-5-5:2007 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- IEC 60747-5:1992 Semiconductor devices; discrete devices and integrated circuits; part 5: optoelectronic devices
Standard Association of Australia (SAA)
- AS ISO 15472:2006 Surface chemical analysis - X-ray photoelectron spectrometers - Calibration of energy scales
- AS ISO 19318:2006 Surface chemical analysis - X-ray photoelectron spectroscopy - Reporting of methods used for charge control and charge correction
- AS ISO 15470:2006(R2016) Surface chemical analysis - X-ray photoelectron spectroscopy - Description of selected instrumental performance parameters
- AS ISO 15470:2006 Surface chemical analysis - X-ray photoelectron spectroscopy - Description of selected instrumental performance parameters
- AS ISO 24237:2006 Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
- AS ISO 24237:2006(R2016) Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
Danish Standards Foundation
- DS/IEC 747-12:1993 Semiconductor devices. Part 12: Sectional specification for optoelectronic devices
- DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices
Japanese Industrial Standards Committee (JISC)
- JIS K 0145:2002 Surface chemical analysis -- X-ray photoelectron spectrometers -- Calibration of energy scales
- JIS T 0306:2002 Analysis of state for passive film formed on metallic biomaterials by X-ray photoelectron spectroscopy
GOSTR
- GOST R 58566-2019 Optics and photonics. Lenses for optical electronic systems. Test methods
Optoelectronics,x-ray photoelectron,electron light scattering,light paper electronics,Optoelectronics,X-ray electron,photoreactive light,light wavelength light,light emitting light,light for light,photoelectron peak,Optoelectronic devices,light and light,monochromatic light,Principle of light and light,electron light,light phenomenon,electron light,Bar light,Optoelectronic Technology