Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)

Optoelectronics

Optoelectronics, Total:172 items.

The international standard classification for "Optoelectronics" includes: Chemical analysis , Optical measuring instruments , Semiconductor devices , Other semiconductor devices , Measurement of electrical and magnetic quantities , Optoelectronics. Laser equipment , Other standards related to quality , Fiber optic interconnecting devices .

The Chinese standard classification for "Optoelectronics" includes: Basic standards and general methods , Electron optics and other physical optics instrument , Optoelectronic device assembly , Semiconductor emitting device , Integrated test system , Carrier communication equipment , Semiconductor discrete devices in general , Technical management , Technical management , Technical management , Microwave and millimeter wave diode and triode , Laser device .


Group Standards of the People's Republic of China

  • T/QGCML 3114-2024 Process specifications for welding equipment for metal shells of optoelectronic devices
  • T/ZZB 1373-2019 7N photoelectric class hyperpure ammonia
  • T/ZSA 39-2020 Characterization of Graphene - Work function - Ultraviolet photoelectron spectroscopy (UPS) method

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 30704-2014 Surface chemical analysis―X-ray photoelectron spectroscopy―Guidelines for analysis
  • GB/T 21194-2007 Generic reliability assurance requirements for optoelectronic devices used in telecommunications equipment
  • GB/T 36359-2018 Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes
  • GB/T 15651-1995 Semiconductor devices Discrete devices and integrated circuits Part 5: Optoelectronic devices
  • GB/T 19500-2004 General rules for X-ray photoelectron spectroscopic analysis method
  • GB/T 36229-2018(英文版) "Methode und Indikatoren zur Zuverl ssigkeitsbewertung von aktiven photoelektronischen Schutzeinrichtungen"
  • GB/T 15651.5-2024 Semiconductor devices—Part 5-5: Optoelectronic devices—Photocouplers
  • GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices
  • GB/T 28632-2012 Surface chemical analysis—Auger electron spectroscopy and X-ray photoelectron spectroscopy—Determination of lateral resolution
  • GB/T 15651.6-2023 Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes
  • GB/T 31472-2015 Standard guide to charge control and charge referencing techniques in X-ray photoelectron spectroscopy
  • GB/T 12565-1990 Semiconductor devices Sectional specification for optoelectronic devices
  • GB/T 15651.7-2024 Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors
  • GB/T 25184-2010 Verification method for X-ray photoelectron spectrometers
  • GB/T 36360-2018 Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes

Military Standard of the People's Republic of China-General Armament Department

  • GJB 33/19-2011 Semiconductor optoelectronic device.Detail specification for type GH302-4 photocoupler
  • GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
  • GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
  • GJB/Z 40.6-1993 Military vacuum electronic devices series spectrum vacuum optoelectronic devices
  • GJB 33/21-2011 Semiconductor optoelectronic device.Detail specification for GD310A series photocopier
  • GJB 33/22-2011 Semiconductor optoelectronic device.Detail specification for type GO103 photocoupler
  • GJB 8119-2013 General specification for semiconductor optoelectronic device
  • GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
  • GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
  • GJB 33/23-2011 Semiconductor optoelectronic device.Detail specification for type GH3201Z-4 photocoupler
  • GJB 33/20-2011 Semiconductor optoelectronic device.Detail specification for type GH302 photocoupler

Professional Standard - Electron

  • SJ/T 11400-2009 Semiconductor optoelectronic devices - Blank detail specification for lower-power light-emitting diodes
  • SJ 50033/110-1996 Semiconductor optoelectronic devices - Detail specification for Type GR9413 infrared light emitting diode
  • SJ 50033/114-1996 Semiconductor optoelectronic devices - Detail specification for Type GD3283Y position sensitive detector
  • SJ 50033/138-1998 Semiconductor optoelectronic devices - Detail specification for yellow light-emitting diode for Type GF318
  • SJ 50033/111-1996 Semiconductor optoelectronic devices - Detail specification for Type GT16 Si. NPN phototransistor
  • SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
  • SJ 50033/143-1999 Semiconductor optoelectronic devices - Detail specification for Type GF1120 red emitting diode
  • SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
  • SJ 50033/142-1999 Semiconductor optoelectronic devices-Detail specification for Type GF4112 green emitting diode
  • SJ/T 11393-2009 Semiconductor optoelectronic devices - Blank detail specification for power light-emitting diodes
  • SJ/T 11405-2009 Semiconductor optoelectronic devices for fibre optic system applications-Part 2:Measuring methods
  • SJ 50033/139-1998 Semiconductor optoelectronic devices-Detail specification for green light-emitting diode for Type GF4111
  • SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
  • SJ 50033/137-1997 Semiconductor discrete devices-Detail specification for orang-red light emitting diode for Type GF216
  • SJ 50033/113-1996 Semiconductor optoelectronic devices - Detail specification for Type GD3252Y photodiodes
  • SJ/T 10458-1993 Standard guide for specimen handling in auger electron spectroscopy and X-ray photoelectron spectroscopy
  • SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
  • SJ 50033/58-1995 Semiconductor optoelectronic device - Detail specification for green light emitting diode for Type GF413
  • SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
  • SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
  • SJ 50033/112-1996 Semiconductor optoelectronic devices-Detail specification for Type GD3251Y photodiodes
  • SJ 50033/136-1997 Semiconductor discrete devices - Detail specification for red light emitting diode for Type GF116
  • SJ 50033/99-1995 Semiconductor optoelectronic devices-Detail specification for o/G double colour light emitting diode for Type GF511
  • SJ/T 10714-1996 Standard practice for checking the operation characteristics of X-ray photoelectron spectrometers

National Metrological Verification Regulations of the People's Republic of China

National Metrological Technical Specifications of the People's Republic of China

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

  • GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers
  • GB/T 33768-2017 Rfeliability test method for optoelectronic devices used in telecommunications

Professional Standard - Post and Telecommunication

  • YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: measuring methods
  • YD/T 2342-2011 Reliability Test Method for Optoelectronic Devices Used in Telecommunications

国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes
  • GB/T 41072-2021 Surface chemical analysis - Electron spectroscopies - Guidelines for ultraviolet photoelectron spectroscopy analysis

Korean Agency for Technology and Standards (KATS)

  • KS D 2518-1982 Methods for photoelectric emission spectrochemical analysis of cadmium metal
  • KS D 2518-2005 Methods for photoelectric emission spectrochemical analysis of cadmium metal
  • KS C 7631-1998(2020) Electronic starters for fluorescent lamps
  • KS C 7631-1998 Electronic starters for fluorescent lamps
  • KS C 7631-2020 Electronic starters for fluorescent lamps
  • KS D 1852-2005 Methods for photoelectric emission spectrochemical analysis of aluminium and aluminium alloys
  • KS D ISO 15472-2003(2018) Surface chemical analysis - X-ray photoelectron spectroscopy - Calibration of energy scale
  • KS C IEC 60747-5:2004 Semiconductor devices-Discrete devices-Part 5:Optoelectronic devices
  • KS D ISO 18118:2005 Surface chemical analysis-Auger electron spectroscopy and X-ray photoelectron spectroscopy-Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

Institute of Interconnecting and Packaging Electronic Circuits (IPC)

  • IPC 0040-2003 Optoelectronics Assembly and Packaging Technology

Association Francaise de Normalisation

  • NF C96-550/A1:1980 Optoelectronic Special measurement methods for optoelectronic devices
  • NF X21-061:2008 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution.
  • NF V04-040-3:1997 Milk. Enumeration of somatic cells. Part 3 : fluoro-opto-electronic method.
  • NF T01-032:1976 Molecular absorption spectrophotometry. Optical cells.
  • NF X21-071:2011 Surface Chemical Analysis - X-ray photoelectron Spectroscopy - Guidelines for analysis.

International Organization for Standardization (ISO)

  • ISO 9211-2:2010 Optics and photonics - Optical coatings - Part 2: Optical properties
  • ISO 16129:2012 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • ISO 16129:2018 Surface chemical analysis — X-ray photoelectron spectroscopy — Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • ISO 18516:2006 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution
  • ISO/TR 18392:2005 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for determining backgrounds
  • ISO 14524:1999 Photography - Electronic still-picture cameras - Methods for measuring opto-electronic conversion functions (OECFs)
  • ISO 10810:2019 Surface chemical analysis — X-ray photoelectron spectroscopy — Guidelines for analysis
  • ISO 24237:2005 Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
  • ISO 10810:2010 Surface chemical analysis - X-ray photoelectron spectroscopy - Guidelines for analysis
  • ISO 18118:2004 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials
  • ISO 18118:2015 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

British Standards Institution (BSI)

  • BS ISO 16129:2012 Surface chemical analysis. X-ray photoelectron spectroscopy. Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • BS ISO 16129:2018 Surface chemical analysis. X-ray photoelectron spectroscopy. Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • BS ISO 18516:2006 Surface chemical analysis - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution
  • BS ISO 21270:2005 Surface chemical analysis - X-ray photoelectron and Auger electron spectrometers - Linearity of intensity scale
  • BS ISO 10810:2019 Surface chemical analysis. X-ray photoelectron spectroscopy. Guidelines for analysis
  • BS ISO 14524:2000 Photography - Electronic still-picture cameras - Methods for measuring opto-electronic conversion functions (OECFs)
  • BS ISO 23584-1:2009 Optics and photonics - Specification of reference dictionary - General overview on organization and structure
  • BS ISO 15472:2010 Surface chemical analysis - X-ray photoelectron spectrometers - Calibration of energy scales
  • BS ISO 10810:2010 Surface chemical analysis. X-ray photoelectron spectroscopy. Guidelines for analysis
  • BS ISO 24237:2005 Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
  • BS EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications. Specification template for essential ratings and characteristics
  • BS IEC 60747-5-13:2021 Semiconductor devices. Optoelectronic devices. Hydrogen sulphide corrosion test for LED packages
  • BS EN 120000:1996 Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices

American National Standards Institute (ANSI)

German Institute for Standardization

  • DIN ISO 16129:2020-11 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer (ISO 16129:2018); Text in English
  • DIN ISO 16129 E:2020-01 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • DIN ISO 9211-2:2012 Optics and photonics - Optical coatings - Part 2: Optical properties (ISO 9211-2:2010)
  • DIN ISO 16129:2020 Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer (ISO 16129:2018); Text in English
  • DIN ISO 15472 E:2019-09 Surface chemical analysis - X-ray photoelectron spectrometers - Calibration of energy scales
  • DIN 6800-2:2020-08 Procedures of dosimetry with probe-type detectors for photon and electron radiation - Part 2: Ionization chamber dosimetry of high energy photon and electron radiation

GSO

  • BH GSO ISO 16129:2015 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • OS GSO ISO 16129:2014 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • GSO ISO 11505:2015 Surface chemical analysis -- General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry
  • GSO ISO 10810:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis
  • OS GSO ISO 10810:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis
  • BH GSO ISO 10810:2016 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Guidelines for analysis
  • GSO ISO 14701:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Measurement of silicon oxide thickness
  • GSO ISO/TR 18392:2013 Surface chemical analysis -- X-ray photoelectron spectroscopy -- Procedures for determining backgrounds

American Society for Testing and Materials (ASTM)

  • ASTM E995-16 Standard Guide for Background Subtraction Techniques in Auger Electron Spectroscopy and X-Ray Photoelectron Spectroscopy
  • ASTM E996-10 Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
  • ASTM E996-04 Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
  • ASTM E2108-10 Standard Practice for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer
  • ASTM E2108-00 Standard Practice for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer
  • ASTM E2735-13 Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy (XPS) Experiments
  • ASTM E2735-14 Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy 40;XPS41; Experiments
  • ASTM E902-05 Standard Practice for Checking the Operating Characteristics of X-Ray Photoelectron Spectrometers
  • ASTM E1217-11 Standard Practice for Determination of the Specimen Area Contributing to the Detected Signal in Auger Electron Spectrometers and Some X-Ray Photoelectron Spectrometers
  • ASTM E1217-05 Standard Practice for Determination of the Specimen Area Contributing to the Detected Signal in Auger Electron Spectrometers and Some X-Ray Photoelectron Spectrometers
  • ASTM E1217-00 Standard Practice for Determination of the Specimen Area Contributing to the Detected Signal in Auger Electron Spectrometers and Some X-Ray Photoelectron Spectrometers
  • ASTM E2108-16 Standard Practice for Calibration of the Electron Binding-Energy Scale of an X-Ray Photoelectron Spectrometer
  • ASTM E996-94(1999) Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
  • ASTM E2735-14(2020) Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy (XPS) Experiments
  • ASTM E996-19 Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
  • ASTM E996-10(2018) Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy

European Standard for Electrical and Electronic Components

SCC

  • 11/30230635 DC BS ISO 16129. Surface chemical analysis. X-ray photoelectron spectroscopy. Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer
  • DIN ISO 16129 E:2020 Draft Document - Surface chemical analysis - X-ray photoelectron spectroscopy - Procedures for assessing the day-to-day performance of an X-ray photoelectron spectrometer (ISO 16129:2018); Text in English
  • BS PD IEC TR 60747-5-12:2021 Semiconductor devices-Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
  • DIN 6800-2:2020 Procedures of dosimetry with probe-type detectors for photon and electron radiation - Part 2: Ionization chamber dosimetry of high energy photon and electron radiation
  • 09/30191895 DC BS ISO 10810. Surface chemical analysis. X-ray photoelectron spectroscopy. Guidelines for analysis

Defense Logistics Agency

CZ-CSN

  • CSN 34 5152 Cast.6-1988 Terminology of telecommunication engineering. Optoelectronics and information transmission by optical fibres
  • CSN 35 8851-1987 Semiconductor optoelectronic devices. Nomenclature, definition and letter symbols of parameters
  • CSN 35 8804-1985 Semiconductor optoelectronic devices for widely u?ed equipments. General specifications

RU-GOST R

  • GOST 23340-1978 Optoelectron commutators of analog signal. Basic parameters
  • GOST 23339-1978 Optoelectron switches of logic signals. Basic parameters
  • GOST 27299-1987 Semiconductor optoelectronic devices. Terms, definitions and letter symbols of parameters

International Electrotechnical Commission (IEC)

  • IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60747-5-5:2007 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-5:1992 Semiconductor devices; discrete devices and integrated circuits; part 5: optoelectronic devices

Standard Association of Australia (SAA)

  • AS ISO 15472:2006 Surface chemical analysis - X-ray photoelectron spectrometers - Calibration of energy scales
  • AS ISO 19318:2006 Surface chemical analysis - X-ray photoelectron spectroscopy - Reporting of methods used for charge control and charge correction
  • AS ISO 15470:2006(R2016) Surface chemical analysis - X-ray photoelectron spectroscopy - Description of selected instrumental performance parameters
  • AS ISO 15470:2006 Surface chemical analysis - X-ray photoelectron spectroscopy - Description of selected instrumental performance parameters
  • AS ISO 24237:2006 Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale
  • AS ISO 24237:2006(R2016) Surface chemical analysis - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale

Danish Standards Foundation

  • DS/IEC 747-12:1993 Semiconductor devices. Part 12: Sectional specification for optoelectronic devices
  • DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices

Japanese Industrial Standards Committee (JISC)

  • JIS K 0145:2002 Surface chemical analysis -- X-ray photoelectron spectrometers -- Calibration of energy scales
  • JIS T 0306:2002 Analysis of state for passive film formed on metallic biomaterials by X-ray photoelectron spectroscopy

GOSTR

  • GOST R 58566-2019 Optics and photonics. Lenses for optical electronic systems. Test methods