GB/T 4059-2007 in English

SUPERSEDED

Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere

Issued on:2007-12-18
Implemented on:2008-02-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $120.00
$117.00

Standard No:	GB/T 4059-2007
Document status:	SUPERSEDED
Superseded by:	GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
Superseded on:	2019-11-01
Title in English:	Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
Title in Chinese:	硅多晶气氛区熔基磷检验方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2007-12-18
Implemented on:	2008-02-01
Superseding:	GB/T 4059-1983 Polycrystalline silicon; Examination method; Zone-melting on phosphorus under controlled atmosphere
ICS Classification:	77.040.01-Testing of metals in general
Chinese Classification:	H17-Semimetal and semiconductor material analysis method
Professional Classification:	GB-National Standard
Related Keywords:	polycrystalline silicon rod-based phosphorus polycrystalline silicon examination silicon cores silicon polycrystalline
Related Topics:	as4059 Polycrystalline Crystal orientation detection m2 polycrystalline crystal Check polyol total phosphorus area Crystal form detection method atmosphere Silicon Wafer Inspection Method Crystallization detection method Phosphorus area How to test single crystal base method Crystal orientation detection Crystallization detection method How to detect single crystal silicon primary crystal region Total phosphorus detection method How to test for oxygen Total phosphorus detection method Multi-directional Twin detection method Total phosphorus area Total phosphorus detection method GBT4059 GB/T 4059-2007 GB/T 4059-2018 The difference between QG inspection methods How to use various gas calibration tubes How to use various gas detectors How to determine single crystal and polycrystalline Inspection methods for metal single crystals and polycrystals Titanium silicon inspection Polycrystalline Silicon single crystal seed crystal Yellow phosphorus national standard detection method Polycrystalline silicon atmospheric emissions Total Phosphorus Method Validation Polycrystalline silicon powder Crystalline silicon detection method Assay method for phosphorus Detection methods for phosphorus-containing gases Crystal water detection method How to distinguish single crystals from polycrystalline

《GB/T 4059-2007硅多晶气氛区熔基磷检验方法》由610（中国有色金属工业协会）归口，主管部门为中国有色金属工业协会。
本标准适用于多晶硅沉积在硅芯上生长的多晶硅棒基磷的检验。

Scope

This standard applies to the inspection of polycrystalline silicon rod-based phosphorus deposited on silicon cores. The effective range of this standard to detect impurity concentration: 0.002×10～100×10.

More samples: DL/T 5154-2012 DL/T 368-2010 NB/T 47013.2-2015

Sample only — not a preview of GB/T 4059-2007

Loading PDF document...

Error loading PDF. Please make sure the file is valid and try again.