JB/T 6307.3-1992 in English

VALID

Test Method for Power Semiconductor Module Triphase Bridge Rectifier Diode

Issued on:1992-06-26
Implemented on:1993-01-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $210.00
$204.00

Standard No:	JB/T 6307.3-1992
Document status:	VALID
Title in English:	Test Method for Power Semiconductor Module Triphase Bridge Rectifier Diode
Title in Chinese:	电力半导体模块测试方法整流管三相桥
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1992-06-26
Implemented on:	1993-01-01
Chinese Classification:	K46-Power semiconductor device and parts
Professional Classification:	JB-Machinery
Related Keywords:	power semiconductor module triphase bridge rectifier diode scopethis standard semiconductor diode chips three-phase bridge modules power semiconductor three-phase bridge components
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本标准规定了由半导体二极管芯片组成的整流管三相桥模块的测试方法。
本标准适用于电流为5A及5A以上的电力半导体整流管三相桥模块。由整流二极管组成的三相桥组件亦应参照使用。

Scope

This standard specifies the test methods for rectifier three-phase bridge modules composed of semiconductor diode chips. This standard applies to power semiconductor rectifier three-phase bridge modules with currents of 5A and above. Three-phase bridge components composed of rectifier diodes should also be used with reference.

More samples: JC/T 2453-2018 GB 50021-2001(2009) DL/T 5154-2012

Sample only — not a preview of JB/T 6307.3-1992

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