JC/T 2133-2012 in English

VALID

Determination of impurities in silica sol for polishing solution in semiconductor industry—Inductively coupled plasma atomic emission spectrometric method

Issued on:2012-12-28
Implemented on:2013-06-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $120.00
$117.00

Standard No:	JC/T 2133-2012
Document status:	VALID
Title in English:	Determination of impurities in silica sol for polishing solution in semiconductor industry—Inductively coupled plasma atomic emission spectrometric method
Title in Chinese:	半导体抛光液用硅溶胶中杂质元素含量的测定 -电感耦合等离子体原子发射光谱法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2012-12-28
Implemented on:	2013-06-01
ICS Classification:	71.040-Analytical chemistry
Chinese Classification:	C14-Drugs for antipyretic, anodyne, anesthesia and central nervous system
Professional Classification:	JC-Building Material
Related Keywords:	plasma atomic emission plasma atomic emission spectroscopy semiconductor polishing fluids silica sol various silica sol
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本标准规定了采用电感耦合等离子体原子发射光谱（ICP-AES）法测定半导体抛光液用硅溶胶中杂质元素含量的方法。
本标准适用于半导体化学机械抛光（CMP）中抛光液用的各种硅溶胶。

Scope

This standard specifies a method for determining the content of impurity elements in silica sol for semiconductor polishing fluids using inductively coupled plasma atomic emission spectroscopy (ICP-AES). This standard applies to various silica sol used in polishing fluids in semiconductor chemical mechanical polishing (CMP). Impurity elements include: aluminum, barium, calcium, chromium, copper, iron, potassium, magnesium, manganese, sodium, nickel, titanium, zinc, zirconium and other 14 elements.

More samples: NB/T 47013.2-2015 GB 50021-2001(2009) DL/T 368-2010

Sample only — not a preview of JC/T 2133-2012

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