Semiconductor Silicon Particles

Semiconductor Silicon Particles, Total:407 items.

The international standard classification for "Semiconductor Silicon Particles" includes: Nuclear energy engineering , Radiation measurements , Semiconducting materials , Space systems and operations , Aircraft and space vehicles in general , Electronic components in general , Semiconductor devices in general , Optoelectronics. Laser equipment , Analytical chemistry .

The Chinese standard classification for "Semiconductor Silicon Particles" includes: Nuclear detector , Nuclear instrument and detector in general , Semimetal , Electronic components , Ambient conditions , Basic standards and general methods , Semiconductor discrete devices in general , Special electronic technology material , Technical management , Technical management , Technical management , Power semiconductor device and parts , Electrical insulating material and its products , Light metals and their alloys , Laser device , Drugs for antipyretic, anodyne, anesthesia and central nervous system .

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB 5839-1986 Rating systems for electronic tubes and semiconductor devise
GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
GB/T 8646-1998 Fine aluminum-1% silicon wire for semiconductor lend-bonding
GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices
GB/T 44181-2024 Space environment—Method of single event upset rates prediction of semiconductor devices for space applications
GB/T 43226-2023 Time-domain test methods for space single event soft errors of semiconductor integrated circuit
GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
GB/T 5839-1986 Rating systems for electronic tubes and semiconductor devise
GB/T 5201-1994 Test procedures for semiconductor charged particle detectors
GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

Professional Standard - Aerospace

QJ 10005-2008 Test guidelines of single event effects induced by heavy ions of semiconductor devices for space applications

未注明发布机构

DIN EN 60749-44 E:2014-08 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
IEEE Std 300-1988(R2006) IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors

Group Standards of the People's Republic of China

T/ICMTIA CM0038-2024 High purity quartz crucible for semiconductor silicon single crystal production
T/NXCL 28-2024 Synthetic quartz crucible for semiconductor grade monocrystalline silicon growth
T/CEMIA 023-2021 Quartz crucible for semiconductor monosilicon growth
T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
T/CIE 119-2021 Test method and procedure of atmospheric-neutron induced single event effects in semiconductor devices
T/CEMIA 024-2021 Quartz crucible manufacturing practices for semiconductor monosilicon growth
T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology
T/ICMTIA CM0035-2023 Sealing gasket for semiconductor silicon material process device
T/CASME 581-2023 Technical requirements for silicon rings for semiconductors

Professional Standard - Non-ferrous Metal

YS/T 543-2006 Fine aluminum-1% silicon wire for semiconductor lend-bonding

Professional Standard - Electron

SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
SJ 909-1974 Detail specification for silicon voltage regulator diodes,Type 2CW50~149
SJ 50033/77-1995 Semiconductor discrete devices - Detail specification for Type 3DA331 silicon microwave power transistor
SJ 50033/109-1996 Semiconductor optoelectronic devices - Detail specification for Types GJ903T and GJ9032T and GJ9034T semiconductor laser diodes
SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
SJ 50033/74-1995 Semiconductor discrete devices-Detail specification for Type 3DA325 silicon microwave power transistor
SJ 50033.40-1994 Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
SJ 50033/111-1996 Semiconductor optoelectronic devices - Detail specification for Type GT16 Si. NPN phototransistor
SJ 50033/155-2002 Semiconductor discrete devices Detail specification for type 3DG252 sillcon microwave linearity transistor
SJ 50033/140-1999 Semiconductor discrete devices Detail specification for type 3DA502 silicon microwave pulse power transistor
SJ 910-1974 Detail specification for silicon voltage regulator diodes,Type 3DW50~202

Professional Standard - Machinery

JB/T 7061-1993 Silicon Wafers Intended to Be Used in Power Semiconductor Devices
JB/T 7622-1994 Organosilicone Lacquer Intended to Be Used in Power Semiconductor Device Production Process

工业和信息化部

YS/T 543-2015 Standard specification for fine aluminum-1% silicon wire for semiconductor lead-bonding

Military Standard of the People's Republic of China-General Armament Department

GJB 33/11-1989 Detailed specifications for semiconductor discrete devices BT37 type PN silicon single-junction transistor
GJB 33/10-1989 Detailed specifications for semiconductor discrete devices BT33 type PN silicon single-junction transistor
GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
GJB 33/2A-2021 Semiconductor discrete device 3DD3767 type NPN silicon power transistor detailed specification
GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
GJB 33/3A-2021 Semiconductor discrete device 3DD3442 type NPN silicon power transistor detailed specification
GJB 8119-2013 General specification for semiconductor optoelectronic device
GJB 33/9-1989 Detailed specifications for semiconductor discrete devices BT32 type PN silicon single-junction transistor
GJB 33/1A-2021 Semiconductor discrete device 3DD3716 type NPN silicon power transistor detailed specification
GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler

Professional Standard - Agriculture

GB/T 43967-2024 Space environment—Test method of single event effects induced by pulsed laser of semiconductor devices for space application

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers

Professional Standard - Building Materials

JC/T 2133-2012 Determination of impurities in silica sol for polishing solution in semiconductor industry—Inductively coupled plasma atomic emission spectrometric method

Shaanxi Provincial Standard of the People's Republic of China

DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

CZ-CSN

CSN 35 1531-1973 Silicon semiconductor rectifiers
CSN 34 5912-1987 Wire of aluminium-silicon alloy for bonding of electronic semiconductor devices
CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices

SCC

IEC 60333:1983 Test procedures for semiconductor charged-particle detectors
MIL MIL-S-19500/530-1979 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
MIL MIL-S-19500/529-1978 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904
MIL MIL-S-19500/288-1964 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
MIL MIL-S-19500/289-1964 Semiconductor Device, Transistor, PNP, Silicon Type 2N2378
MIL MIL-PRF-19500/707-2002 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7500U5 2N7501U5 2N7502U5 JANTXVR JANSR
MIL MIL-PRF-19500/633C-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
MIL MIL-S-19500/352-1966 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
MIL MIL-PRF-19500/659-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
MIL MIL-S-19500/298-1964 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A
MIL MIL-PRF-19500/658-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
DANSK DS/EN 60749-44:2016 Semiconductor devices – Mechanical and climatic test methods – Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
CEI EN 60749-44:2017 Semiconductor devices - Mechanical and climatic test methods Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
MIL MIL-PRF-19500/684-2000 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
MIL MIL-PRF-19500/701-2001 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N-CHANNEL SILICON TYPES 2N7491T2 2N7492T2 2N7493T2 JANTXVR F G H JANSR F G H
MIL MIL-PRF-19500/684H-2016 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
MIL MIL-PRF-19500/707A-2007 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR
MIL MIL-PRF-19500/752A-2017 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Type 2N7608T2, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/712-2003 SEMICONDUCTOR DEVICE FIELD EFF. RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTORS -CHANNEL SILICON TYPES 2N7545U3 2N7546U3 2N7547T3 & 2N7548T3 JANTXVR F G H & JANSR F G H
MIL MIL-PRF-19500/749-2008 Semiconductor Device, Field Effect Transistor, P-Channel Radiation Hardened (Total Dose and Single Event Effects), Silicon, Types 2N7506U8 and 2N7506U8C, JANTXVR, JANTXVF, JANSR and JANSF
MIL MIL-PRF-19500/752-2010 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Type 2N7608T2, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-S-19500/425-1969 SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431
MIL MIL-PRF-19500/638B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/638A)
MIL MIL-PRF-19500/675D-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
MIL MIL-PRF-19500/689-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
MIL MIL-PRF-19500/631C-2019 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7396, 2N7397 AND, 2N7398, JANSD AND JANSR
DIN IEC 60333:1995 Nuclear instrumentation - Semiconductor charged-particle detectors - Test procedures (IEC 60333:1993)
MIL MIL-PRF-19500/666-1999 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R (NO S/S DOCUMENT)
MIL MIL-PRF-19500/661-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR
MIL MIL-PRF-19500/713-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/639A-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR (SUPERSEDING MIL-S-19500/639)
MIL MIL-PRF-19500/713E-2018 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/753A-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7580T1, 2N7582T1, 2N7584T1, and 2N7586T1, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/744-2008 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/753B-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7580T1, 2N7582T1, 2N7584T1, and 2N7586T1, JANTXVR, JANTXVF, JANSR, and JANSF
IEC PAS 62202:2000 Failure mechanisms and models for silicon semiconductor devices
MIL MIL-PRF-19500/733A-2007 Semiconductor Device, Field Effect Radiation Hardened(Total Dose and Single Event Effects)Transistors, P-Channel, Silicon, Types 2N7523T1, 2N7523U2, 2N7524T1, and 2N7524U2,JANTXVR, F and JANSR, F
MIL MIL-PRF-19500/745D-2012 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/745-2008 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/753-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7580T1, 2N7582T1, 2N7584T1, and 2N7586T1, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/713F-2018 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/654-2000 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N430T1 JANTXVD, JANTXVR, AND JANSR(NO S/S DOCUMENT)
MIL MIL-PRF-19500/741-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
MIL MIL-PRF-19500/685H-2016 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)
MIL MIL-PRF-19500/684D-2007 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684C)
MIL MIL-PRF-19500/745E-2018 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/745C-2011 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/755A-2017 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF
MIL MIL-PRF-19500/703-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE & SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7479U3 - 2N7481U3 JANTXVR F G & H & JANSR F G & H
MIL MIL-PRF-19500/745A-2009 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/685D-2007 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR(SUPERSEDING MIL-PRF-19500/685B)
MIL MIL-PRF-19500/684C-2006 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684B)
MIL MIL-PRF-19500/745B-2010 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/706-2002 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7497T2 2N7498T2 2N7499T2 JANTXVR JANSR (S/S BY MIL-PRF-19500/706A)
MIL MIL-PRF-19500/741A-2009 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
MIL MIL-PRF-19500/755-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF
MIL MIL-PRF-19500/676D-2007 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
MIL MIL-PRF-19500/633B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON TYPES 2N7403 AND 2N7404, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/633A)
MIL MIL-PRF-19500/741B-2018 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
MIL MIL-PRF-19500/684B-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684A)
MIL MIL-PRF-19500/733-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/684A-2003 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2, AND 2N7474U2 JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684)
MIL MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
MIL MIL-PRF-19500/705A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/705)
MIL MIL-PRF-19500/634B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/634A)
MIL MIL-PRF-19500/632B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/632A)
MIL MIL-PRF-19500/287G-2008 Semiconductor Device, Transistor, NPN Silicon, Switching, Type 2N3013, JAN and JANTX
MIL MIL-S-19500/247-1962 SEMICONDUCTOR DEVICES TRANSISTOR, NPN, SILICON TYPE 2N1493 (NO S/S DOCUMENT)
MIL MIL-PRF-19500/706A-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/706)
MIL MIL-S-19500/163-1961 SEMICONDUCTOR DEVICE TRANSISTOR, NPN, SILICON TYPE 2N1072 (NO S/S DOCUMENT)
MIL MIL-PRF-19500/743-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F and G and JANSR, F and G
MIL MIL-PRF-19500/732A-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, P-Channel, Silicon, Types 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, and 2N7520T3, JANTXVR, F and JANSR, F
DIN EN 60749-44 E:2014 Draft Document - Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 47/2193/CD:2014)
CEI 3-17:2005 Segni grafici per schemi - Semiconduttori e tubi elettronici
MIL MIL-PRF-19500/732-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3 AND T3, 2N7520U3 AND T3, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/699-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOATL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, 2N7529U3 JANTXVD, R & JANSD, R(NO S/S DOCUMENT)
CEI EN 60191-6-22:2014 Mechanical standardization of semiconductor devices Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silic...
MIL MIL-PRF-19500/704A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/704)
MIL MIL-PRF-19500/667-2000 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7456U1, 2N457U1, AND 2N7459U1, JANTXVD, JANTXVR, JANSD, AND JANSR(NO S/S DOCUMENT)
MIL MIL-PRF-19500/687A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R (SUPERSEDING MIL-PRF-19500/687)
MIL MIL-PRF-19500/518E-2019 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N3766, 2N3767 JAN, JANTX, AND JANTXV
MIL MIL-S-19500/179A-1972 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N1234 (SUPERSEDING MIL-S-19500/179)
MIL MIL-PRF-19500/313C-1997 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER (SUPERSEDING MIL-S-19500/313B)
MIL MIL-PRF-19500/313B-1982 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER (SUPERSEDING MIL-S-19500/313A)
MIL MIL-PRF-19500/370H-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Power, Type 2N3442, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/526H-2012 Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3879, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/370J-2018 Semiconductor Device, Transistor, NPN, Silicon, High-Power, Type 2N3442, JAN, JANTX, and JANTXV
CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
MIL MIL-PRF-19500/759-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Dual Transistor, N-Channel and P-Channel, Logic-Level Silicon Types 2N7632UD, JANTXVR, F, and JANSR, F
MIL MIL-PRF-19500/704-2002 SEMICODUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7485U3 - 2N7486U3 JANTXVR AND JANSR (S/S BY MIL-PRF-19500/704A)
BS 3839:1965 Oxygen free high conductivity copper for electronic tubes and semiconductor devices
MIL MIL-PRF-19500/692A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATIN HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXVD, R, AND JANSR, R (SUPERSEDING MIL-PRF-19500/692)
MIL MIL-PRF-19500/691-2001 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N4148UE2 JAN, JANTX, AND JANJ
DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
MIL MIL-PRF-19500/759A-2012 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Dual Transistor, N-Channel and P-Channel, Logic-Level Silicon Types 2N7632UD, JANTXVR, F, and JANSR, F
MIL MIL-PRF-19500/369F-2008 Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3441, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/407F-2018 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3055, JAN, JANTX, AND JANTXV
MIL MIL-PRF-19500/402E-2008 Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3739, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/526G-2008 Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3879, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/526J-2019 Semiconductor Device, Transistor, NPN, Silicon, Power, Type 2N3879, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/713C-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F (SUPERSEDING MIL-PRF-19500/713B)
MIL MIL-PRF-19500/713A-2007 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F (SUPERSEDING MIL-PRF-19500/713)
MIL MIL-S-19500/363-1967 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, DUAL TYPE 3N93 (NO S/S DOCUMENT)
MIL MIL-S-19500/216A-1969 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051 (SUPERSEDING MIL-S-19500/216)
DANSK DS/EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
MIL MIL-PRF-19500/690-2003 SEMICONDUCTOR DEVICE, SILICON, SWITCHING TYPES 1N4148SOI(NBN), JAN, JANTX, JANTXV, AND JANS
MIL MIL-S-19500/403-1968 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N4500, JAN AND JANTX
MIL MIL-PRF-19500/695-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UEI JAN, JANTX, JANJ
MIL MIL-PRF-19500/686-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ
MIL MIL-PRF-19500/295F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/295E-2004 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DANSK DS/EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noice detection (PIND)
MIL MIL-PRF-19500/705-2002 SEMICODUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N0CHANNEL, SILICON TYPES 2N7488T3 - 2N7490T3 JANTXVR AND JANSR (S/S BY MIL-PRF-19500/705A)
MIL MIL-PRF-19500/631B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7396, 2N7397 AND, 2N7398, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/631A)
MIL MIL-PRF-19500/713B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F (SUPERSEDING MIL-PRF-19500/713A)
MIL MIL-PRF-19500/295G-2020 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/746-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, and 2N7593U3C, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/713D-2015 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F (SUPERSEDING MIL-PRF-19500/713C)
MIL MIL-PRF-19500/700-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7494U5 - 2N7496U5 JANTXVR F G & H & JANSR F G & H (S/S BY MIL-PRF-19500/700A)
MIL MIL-PRF-19500/702-2001 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TOTAL DOSE & SINGLE EVENT EFFECTS TRANSISTOR N-CHANNEL SILICON TYPES 2N7482T3 - 2N7484T3 JANTXVR F G & H JANSR F G & H (S/S BY MIL-PRF-19500/702A)
MIL MIL-PRF-19500/661C-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR(SUPERSEDING MIL-PRF-19500/661B)
MIL MIL-PRF-19500/661F-2017 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR (SUPERSEDING MIL-PRF-19500/661E)
MIL MIL-S-19500/230C-1965 SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207 (SUPERSEDING MIL-S-19500/230B)
MIL MIL-S-19500/362-1966 SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER TYPES 1N1132 AND 1N1132R
MIL MIL-PRF-19500/690A-2011 Semiconductor Device, Diode, Silicon, Switching Types 1N4148SCSP (NBN), JANHC, JANKC
MIL MIL-PRF-19500/295C-2001 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/296E-2004 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
MIL MIL-PRF-19500/700A-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
MIL MIL-PRF-19500/295D-2003 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
MIL MIL-PRF-19500/672-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC,NPN, SILICON, SWITCHING, TYPE 2N222AUE1 JAN, JANTX, JANJ
MIL MIL-PRF-19500/102C-2020 Semiconductor Device, Transistors, NPN, Silicon, High Power Types 2N1016B, 2N1016C, and 2N1016D JAN
MIL MIL-S-19500/139B-1963 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, TYPE JAN-2N1119 (SUPERSEDING MIL-S-19500/139A)
MIL MIL-PRF-19500/102B-2013 Semiconductor Device, Transistors, NPN, Silicon, High Power Types 2N1016B, 2N1016C, and 2N1016D JAN
MIL MIL-PRF-19500/685-2000 SEMICONDUTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (S/S BY MIL-PRF-19500/685A)
MIL MIL-PRF-19500/622D-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Power Type 2N7368 JAN, JANTX, JANTXV,and JANS
MIL MIL-PRF-19500/622E-2019 Semiconductor Device, Transistor, NPN, Silicon, High-Power Type 2N7368 JAN, JANTX, JANTXV,and JANS
MIL MIL-PRF-19500/384F-2008 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/710-2003 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6674T1 2N6674T3 2N6675T1 2N6675T3 JAN JANTX JANTXV
MIL MIL-PRF-19500/315G-2011 Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N2880, 2N3749, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/384G-2013 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
MIL MIL-S-19500/335-1965 SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPE 1N430A, 1N430B
MIL MIL-S-19500/210B-1969 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, PHOTO TYPE 2N986 (SUPERSEDING MIL-S-19500/210A)
MIL MIL-PRF-19500/514D-2013 Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6274 and 2N6277, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/384H-2014 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/296D-2003 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N2609, JAN, AND U
MIL MIL-PRF-19500/540B-1997 SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR PNP, SILICON, POWER (SUPERSEDING MIL-S-19500/540A)
MIL MIL-S-19500/31C-1972 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER TYPE 2N341 (SUPERSEDING MIL-S-19500/31B)
MIL MIL-PRF-19500/336D-1997 SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, PNP, SILICON TYPES (SUPERSEDING MIL-S-19500/336C)
MIL MIL-PRF-19500/296C-2001 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
MIL MIL-PRF-19500/621D-2014 Semiconductor Device, Transistor, PNP, Silicon, High-Power, Type 2N7369, JAN, JANTX, JANTXV, and JANS
CEI EN 62416:2011 Semiconductor devices - Hot carrier test on MOS transistors
MIL MIL-PRF-19500/692-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7515, 2N7516, AND 2N7517 JANTXVD, R AND JANSD, R (S/S BY MIL-PRF-19500/692A)
MIL MIL-PRF-19500/675-2000 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOS AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND U5 SUFFIXES JANTXVR AND JANSR (S/S BY MIL-PRF-19500/675A)
MIL MIL-PRF-19500/700D-2020 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
MIL MIL-PRF-19500/638A-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPE 2N7410 JANSD AND JANSR (SUPERSEDING MIL-S-19500/638) (S/S BY MIL-PRF-19500/638B)
MIL MIL-PRF-19500/676C-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/676B)
MIL MIL-PRF-19500/464F-2007 Semiconductor Device, Transistor, NPN, Silicon Power, Types 2N5685 and 2N5686, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/296G-2020 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICONTYPES 2N2609, JAN, AND UB
MIL MIL-PRF-19500/225L-2019 Semiconductor Device, Transistor, NPN, Silicon, Types 2N1711, 2N1711S, 2N1890, and 2N1890S, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/522B-2017 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPES 2N6603 AND 2N6604 JAN, JANTX, AND JANTXV
MIL MIL-PRF-19500/621E-2020 Semiconductor Device, Transistor, PNP, Silicon, High-Power, Type 2N7369, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/392J-2011 Semiconductor Device, Transistor, PNP, Silicon, Switching, Types 2N3485A and 2N3486A, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/675C-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N0CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/675B)
MIL MIL-PRF-19500/528C-2018 Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6032 and 2N6033 JAN, JANTX, and JANTXV
MIL MIL-S-19500/80E-1972 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPE 3N35 (SUPERSEDING MIL-S-19500/80D)
MIL MIL-PRF-19500/347B-2014 Semiconductor Device, Transistor, NPN, Silicon, Power Types: 2N3253, 2N3253S, 2N3444, 2N3444S, JAN, and JANTX
MIL MIL-PRF-19500/384J-2019 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/296F-2012 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
DANSK DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
MIL MIL-PRF-19500/528B-2008 Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6032 and 2N6033 JAN, JANTX, and JANTXV
MIL MIL-PRF-19500/225K-2011 Semiconductor Device, Transistor, NPN, Silicon, Types 2N1711, 2N1711S, 2N1890, and 2N1890S, JAN, JANTX, and JANTXV

American National Standards Institute （ANSI)

ANSI/IEEE 300:1988 Test Procedures for Semiconductor Charged-Particle Detectors

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors
IEEE 300-1982 STANDARD TEST PROCEDURES FOR SEMICONDUCTOR CHARGED-PARTICLE DETECTORS

GSO

GSO IEC 60333:2009 Nuclear instrumentation - Semiconductor charged-particle detectors - Test procedures
OS GSO IEC 60333:2009 Nuclear instrumentation - Semiconductor charged-particle detectors - Test procedures
GSO IEC 60749-44:2021 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
OS GSO IEC 60191-6-22:2017 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
GSO IEC 60191-6-22:2017 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor

International Electrotechnical Commission (IEC)

IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
IEC 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices
IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND)

Defense Logistics Agency

DLA MIL-S-19500/529 VALID NOTICE 4-2011 Semiconductor Device, Transistor, Silicon Type 2N3904
DLA MIL-S-19500/216 A VALID NOTICE 3-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051
DLA MIL-S-19500/288 (2)-1966 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
DLA MIL-S-19500/216 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon Type 2N1051
DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/139 B NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE JAN-2N1119
DLA MIL-S-19500/288 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N2377
DLA MIL-S-19500/236 A VALID NOTICE 3-2011 Semiconductor Device, Diode, Silicon Type 1N31
DLA MIL-S-19500/298 VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon Type 1N1742A
DLA MIL-S-19500/179 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N1234
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/210 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, PHOTO TYPE 2N986
DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA DSCC-DWG-04029-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
DLA MIL-S-19500/425 VALID NOTICE 3-2011 Semiconductor Device, Transistor, PN, Silicon, Unijunction JAN2N5431, and JANTX2N5431
DLA MIL-S-19500/80 E VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, Low-Power Type 3N35
DLA DSCC-DWG-04030-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-S-19500/16 E VALID NOTICE 3-2011 Semiconductor Device, Transistor, NPN, Silicon Types 2N342, 2N342A and 2N343
DLA MIL-S-19500/69 E VALID NOTICE 3-2011 Semiconductor Device, Transistor, NPN, Silicon, Types JAN-2N337 and JAN-2N338
DLA MIL-PRF-19500/302 C VALID NOTICE 3-2013 Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N2708, JAN
DLA MIL-PRF-19500/302 C VALID NOTICE 2-2008 Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N2708, JAN
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-S-19500/138 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon, Low-Power Type 2N1118
DLA MIL-S-19500/425 VALID NOTICE 2-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-S-19500/373 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon Switching Types 2N914 and TX2N914
DLA MIL-PRF-19500/287 G-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, SWITCHING, TYPE 2N3013, JAN AND JANTX
DLA MIL-S-19500/268 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon Switching Types 2N2481 and TX2N2481
DLA MIL-PRF-19500/142 A NOTICE 2-1999 SEMICONDUCTOR DEVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N1734A
DLA MIL-S-19500/254 B VALID NOTICE 1-2011 Semiconductor Device, Diode, Silicon, Types 1N1147 and 1N1149, JAN
DLA DSCC-DWG-99009 REV A-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5241
DLA MIL-PRF-19500/369 G-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3441, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/74 E NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, MEDIUM POWER, TYPES 2N497, 2N498, 2N656 AND 2N657
DLA MIL-S-19500/277 D VALID NOTICE 3-2011 Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N2150 and 2N2151 JANTX
DLA MIL-PRF-19500/526 H-2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3879, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/402 F-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3739, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/691 VALID NOTICE 2-2011 Semiconductor Device, Diode, Silicon, Switching, 1N4148UE2 JAN, JANTX, and JANJ
DLA MIL-PRF-19500/369 H-2010 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3441, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/256 C NOTICE 2-1999 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663
DLA MIL-PRF-19500/672-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/612 D VALID NOTICE 1-2013 Semiconductor Device, Transistor, PNP, Silicon, Power, Type 2N7372, JAN, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/612 D-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPE 2N7372, JAN, JANTX, JANTXV, AND JANS
DLA DSCC-DWG-00005-2001 SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N21WE, 1N21WEM AND 1N21WEMR
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/518 D (1)-2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3766, 2N3767, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/312 E VALID NOTICE 1-2011 Semiconductor Device, Transistor, NPN, Silicon, Switching Type 2N708, JAN, JANTX, and JANHC
DLA MIL-PRF-19500/370 H-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA MIL-PRF-19500/370 G-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/528 B VALID NOTICE 1-2013 Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6032 and 2N6033 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/296 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
DLA MIL-PRF-19500/466 C VALID NOTICE 1-2012 Semiconductor Device, Transistor, PNP, Silicon, Power, Types 2N5683 and 2N5684, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/622 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/573 B-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4209, JAN, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/362 VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, Mixer Types 1N1132 and 1N1132R
DLA MIL-PRF-19500/296 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
DLA MIL-S-19500/208 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, High Power, Types 2N1487, 22N1488, 2N1489 and 2N1490
DLA MIL-PRF-19500/295 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
DLA MIL-PRF-19500/295 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DLA MIL-PRF-19500/380 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N4865, 2N5250, 2N5251, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/74 E VALID NOTICE 3-2011 Semiconductor Device, Transistors, NPN, Silicon, Medium Power, Types 2N497, 2N498, 2N656 and 2N657
DLA MIL-PRF-19500/695 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N4033UE1 JAN, JANTX, JANJ
DLA MIL-S-19500/110 C VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Silicon, Low-Power Types 2N328A, 2N329A, 2N328AS, and 2N329AS
DLA MIL-PRF-19500/672 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N2222AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/621 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/622 D-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS
DLA SMD-5962-77044 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, NOR GATES, MONOLITHIC SILICON
DLA MIL-PRF-19500/686 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N2907AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/384 G-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER, TYPES 2N3584, 2N3585, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/514 D-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6274 AND 2N6277, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/262 G-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N1722 AND 2N1724, JAN AND JANTX
DLA MIL-PRF-19500/528 B-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6032 AND 2N6033, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/315 G-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/522 A VALID NOTICE 3-2013 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency Types 2N6603 and 2N6604 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/710 A-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6674T1, 2N6674T3, 2N6675T1, AND 2N6675T3, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/515 D VALID NOTICE 1-2012 Semiconductor Device, Transistor, PNP, Silicon, Power, Types 2N6378 and 2N6379, JAN, JANTX, JANTXV, and JANHC
DLA MIL-PRF-19500/750 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Type 2N7507U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/750-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/508 B VALID NOTICE 2-2008 Semiconductor Device, Transistor, PNP, Silicon, Power Types 2N6437 and 2N6438, JAN, JANTX and JANTXV
DLA MIL-PRF-19500/751-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/751 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/448 E-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N4405, 2N4405UA, and 2N4405UB, JAN AND JANTX
DLA MIL-PRF-19500/748-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS
DLA MIL-PRF-19500/384 F VALID NOTICE 1-2013 Semiconductor Device, Transistor, NPN, Silicon High-Power, Types 2N3584, 2N3585, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/748 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7505T3, JANTX, JANTXV and JANS
DLA MIL-PRF-19500/392 J-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3485A AND 2N3486A, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/522 A VALID NOTICE 2-2008 Semiconductor Device, Transistor, NPN, Silicon, High-Frequency Types 2N6603 and 2N6604 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/690 A-2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4148SCSP (NBN), JANHC AND JANKC
DLA MIL-S-19500/335 VALID NOTICE 4-2011 Semiconductor Device, Silicon, Voltage Reference (Temperature- Stable) Type 1N430A, 1N430B
DLA MIL-PRF-19500/508 C-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPES 2N6437 AND 2N6438, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/423 G-2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5581 AND 2N5582, JAN, JANTX, AND JANTXV

British Standards Institution (BSI)

BS EN 60749-44:2016 Semiconductor devices. Mechanical and climatic test methods. Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
BS EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Particle impact noise detection (PIND)
BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
BS EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices. - Part 5: Die and wafer devices
BS IEC 62899-203:2024 Printed electronics - Materials. Semiconductor ink
BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
BS IEC 62899-203:2018 Printed electronics. Materials. Semiconductor ink
BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Std 300-1988 IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors
ANSI/IEEE Std 300-1982 IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors

RU-GOST R

GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination
GOST 26239.5-1984 Semiconductor silicon and quartz. Method of impurities determination
GOST 26239.8-1984 Semiconductor silicon and raw materials for its production. Method of dichlorsilane, trichlorsilane and silicon tetrachloride determination
GOST 26239.0-1984 Semiconductor silicon, raw materials for its production and quartz. General requirements for methods of analysis
GOST 26239.3-1984 Semiconductor selicon, raw materials for its production and quartz. Methods of phosphorus determination
GOST 26239.2-1984 Semiconductor selicon, raw materials for its production and quartz. Methods of boron determination
GOST 26239.1-1984 Semiconductor silicon, raw materials for its production and quartz. Method of impurities determination

Association Francaise de Normalisation

NF EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: test method for the effects of a single event (SEE) irradiated by a neutron beam for semiconductor devices
NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
NF C86-010:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Generic specification.
NF EN 62417:2010 Semiconductor Devices – Mobile Ion Testing for Metal Oxide Field Effect Semiconductor Transistors (MOSFETs)
NF EN 62416:2010 Semiconductor Devices – Hot Carrier Testing on MOS Transistors
NF C80-202*NF EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors

HU-MSZT

MSZ 9200/18-1980 Electronic signals. semiconductor

German Institute for Standardization

DIN 50452-2:2009 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
DIN EN 60749-44:2017-04 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
DIN 50452-1:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
DIN 50452-3:1995-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
DIN 50452-3:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
DIN 50452-2:1991 Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters
DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 60191-6-22:2013-08 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
DIN EN 60749-44:2017 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
DIN EN 60749-16:2003-09 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003
DIN EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003
DIN EN 62416:2010-12 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

ES-UNE

UNE-EN 300386 V1.5.1:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
UNE-EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
UNE-EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
UNE-EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors (Endorsed by AENOR in September of 2010.)

PH-BPS

PNS IEC 60749-44:2021 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices

American Society for Testing and Materials (ASTM)

ASTM F1192-11 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
ASTM F1192-24 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
ASTM F487-88(2001) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
ASTM F487-88(2006) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
ASTM F980-92 Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
ASTM F980-16 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
ASTM F980-10e1 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
ASTM F980-10 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
ASTM F487-13 Standard Specification for Fine Aluminumndash;1???% Silicon Wire for Semiconductor Lead-Bonding
ASTM F487-13(2018) Standard Specification for Fine Aluminum–1 % Silicon Wire for Semiconductor Lead-Bonding

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation
JEDEC JEP122C-2006 Failure Mechanisms and Models for Silicon Semiconductor Devices
JEDEC JESD89A-2006 Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices

Danish Standards Foundation

DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noice detection (PIND)
DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors

IEC - International Electrotechnical Commission

PAS 62202-2000 Failure Mechanisms and Models for Silicon Semiconductor Devices (Edition 1.0)

Lithuanian Standards Office

LST EN 60191-6-22-2013 Mechanical standardization of semiconductor devices -- Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silic
LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)

GOST

GOST R 71070-2023 Electronic semiconductor devices. Terms and definitions

IECQ - IEC: Quality Assessment System for Electronic Components

PQC 82-1989 Semiconductors for Use in Electronic Equipment: Sectional Specification: Semiconductor Integrated Circuits Excluding Hybrid Circuits

Korean Agency for Technology and Standards (KATS)

KS C IEC 60749-16:2006 Semiconductor devices－Mechanical and climatic test methods－Part 16：Particle impact noise detection(PIND)
KS C IEC 60749-16-2006(2016) Semiconductor devices－Mechanical and climatic test methods－Part 16：Particle impact noise detection(PIND)
KS C IEC 60749-16-2021 Semiconductor devices－Mechanical and climatic test methods－Part 16：Particle impact noise detection(PIND)

European Committee for Electrotechnical Standardization（CENELEC）

EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors

AENOR

UNE-EN 60749-16:2003 Semiconductor devices. Mechanical and climatic test methods. Part 16: Particle impact noise detection (PIND)

RO-ASRO

STAS 6693/2-1975 Semiconductor devices TRANSISTORS Methods for measuring electrical properties

Aerospace Industries Association/ANSI Aerospace Standards

AIA/NAS NAS 4124-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Dual Link

Others: Guidelines for Heavy Ion Single Event Effect Test of Semiconductor Devices Used in Aerospace,silicon particles,silicon particles,Semiconductors replace silicon,Semiconductor Silicon Particles,Semiconductor silicon material,siliconized particles,Semiconductor Energetic Particle Detection