GB/T 5201-1994 in English
SUPERSEDEDTest procedures for semiconductor charged particle detectors
- Issued on:1994-01-02
- Implemented on:1995-10-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$204.00
《GB/T 5201-1994带电粒子半导体探测器测试方法》由TC30(全国核仪器仪表标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了带电粒子半导体探测器电特性和核辐射性能的测试方法以及某些特殊环境的试验方法。本标准适用于探测带电粒子的部分耗尽金硅面垒型、锂漂移金硅面垒型和表面钝化离子注入平面硅型等半导体探测器。全耗尽金硅面垒型探测器的某些性能测试也应参照本标准执行。
Scope
This standard specifies the test methods for electrical characteristics and nuclear radiation performance of charged particle semiconductor detectors and test methods for some special environments. This standard applies to partially depleted gold-silicon surface barrier type, lithium drift gold-silicon surface barrier type and surface passivation ion implantation planar silicon type semiconductor detectors for detecting charged particles.

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