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particle semiconductor detectors particle detectors scopethis standard surface passivation ion implantation planar silicon type semiconductor detectors test procedures test methods evice test sprinkler futures institutions
GB/T 5201-1994 in English

GB/T 5201-1994 in English

SUPERSEDED

Test procedures for semiconductor charged particle detectors

  • Issued on:1994-01-02
  • Implemented on:1995-10-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $210.00
$204.00
Standard No: GB/T 5201-1994
Document status: SUPERSEDED
Superseded by: GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
Superseded on: 2012-11-01
Title in English: Test procedures for semiconductor charged particle detectors
Title in Chinese: 带电粒子半导体探测器测试方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 1994-01-02
Implemented on: 1995-10-01
ICS Classification: 17.240-Radiation measurements
Chinese Classification: F80-Nuclear instrument and detector in general
Professional Classification: GB-National Standard
Related Keywords: particle semiconductor detectors
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surface passivation ion implantation planar silicon type semiconductor detectors
test procedures
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《GB/T 5201-1994带电粒子半导体探测器测试方法》由TC30(全国核仪器仪表标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了带电粒子半导体探测器电特性和核辐射性能的测试方法以及某些特殊环境的试验方法。本标准适用于探测带电粒子的部分耗尽金硅面垒型、锂漂移金硅面垒型和表面钝化离子注入平面硅型等半导体探测器。全耗尽金硅面垒型探测器的某些性能测试也应参照本标准执行。


Scope

This standard specifies the test methods for electrical characteristics and nuclear radiation performance of charged particle semiconductor detectors and test methods for some special environments. This standard applies to partially depleted gold-silicon surface barrier type, lithium drift gold-silicon surface barrier type and surface passivation ion implantation planar silicon type semiconductor detectors for detecting charged particles.

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