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Database: 365,228(8 Aug 2026)

Semiconductor particle number reversal conditions

Semiconductor particle number reversal conditions, Total:234 items.

The international standard classification for "Semiconductor particle number reversal conditions" includes: Aircraft and space vehicles in general , Nuclear energy engineering , Radiation measurements , Mechanical structures for electronic equipment , Integrated circuits. Microelectronics , Electrical equipment of ships and of marine structures , Optoelectronics. Laser equipment , Electronic components in general , Motors , Space systems and operations , Packaging machinery , Aerospace electric equipment and systems , Semiconductor devices in general .

The Chinese standard classification for "Semiconductor particle number reversal conditions" includes: Ambient conditions , Nuclear detector , Nuclear instrument and detector in general , Semiconductor integrated circuit , Power generation, transformation and distribution equipment for vessel , Laser device , Basic standards and general methods , Electric drive control equipment , Semiconductor discrete devices in general , Electronic components , Steam turbine and its auxiliary equipment , Storage equipment and handling machinery , Optoelectronic device assembly , Technical management , Technical Management , Technical management , Technical management , Technical management .


General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 12667-1990 General specification for excitation assembly with semiconductor for synchronous motor
  • GB/T 30640-2014 General specification of automatic counting and packaging line
  • GB/T 7423.1-1987 Heat sink of semiconductor devices--Generic specification
  • GB/T 5839-1986 Rating systems for electronic tubes and semiconductor devise
  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
  • GB/T 12565-1990 Semiconductor devices Sectional specification for optoelectronic devices
  • GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
  • GB/T 13973-1992 specification for semiconductor device curve tracers
  • GB/T 42709.19-2023 Semiconductor devices―Micro-electromechanical devices―Part 19:Electronic compasses
  • GB/T 43226-2023 Time-domain test methods for space single event soft errors of semiconductor integrated circuit
  • GB/T 29299-2012 General specification of semiconductor laser rangefinder
  • GB/T 14548-1993 specification for marine semiconductor conver - Tors
  • GB/T 12669-1990 General specification for cascade speed control assembly with semiconductor converter
  • GB 5839-1986 Rating systems for electronic tubes and semiconductor devise
  • GB/T 36042-2018 Specification of rotor forgings for ultra-supercritical steam turbine
  • GB/T 44181-2024 Space environment—Method of single event upset rates prediction of semiconductor devices for space applications
  • GB/T 42839-2023 Semiconductor integrated circuits—Analog digital (AD) converter
  • GB/T 12669-2012 General specification for cascade speed control assembly with semiconductor converter
  • GB 7423.1-1987 sink of semiconductor devices - Generic specification
  • GB/T 42973-2023 Semiconductor integrated circuits—Digital-analog(DA)converter
  • GB/T 12667-2012 General specification for excitation assembly with semiconductors for synchronous motors
  • GB/T 5201-1994 Test procedures for semiconductor charged particle detectors
  • GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices

Professional Standard - Aerospace

  • QJ 2502-1993 General specification for radiation hardened semiconductor discrete devices
  • QJ 3044-1998 Semiconductor Integrated Circuit - Test Method for Digital-to-analog Conventer and Digital-to-analog Converter
  • QJ 787-1983 Semiconductor Discrete Devices - Specifications for Screening
  • QJ 10005-2008 Test guidelines of single event effects induced by heavy ions of semiconductor devices for space applications
  • QJ 786-1983 Semiconductor Integrated Circuits - Specifications for Screening

Group Standards of the People's Republic of China

  • T/CIE 119-2021 Test method and procedure of atmospheric-neutron induced single event effects in semiconductor devices

Military Standard of the People's Republic of China-General Armament Department

  • GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
  • GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
  • GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
  • GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
  • GJB 8119-2013 General specification for semiconductor optoelectronic device

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

  • GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers

Professional Standard - Machinery

  • JB/T 5781-1991 Sectioned Radiator for Power Semiconductor Devices. Technical Specification
  • JB/T 7027-1993 300-600 MW Steam Turbine Rotor Body Forging Specifications
  • JB/T 7027-2014 Rotor Forgings for 300 MW Steam Turbines and Above - Technical Specification
  • JB/T 5537-1991 Semiconductor pressure sensor technical conditions
  • JB/T 5844-1991 Directional relays and power relays with two input energizing quantities (IEC 60255-12: 1980 NEQ)
  • JB/T 7022-2014 The Rotor Forgings for Industrial Steam Turbines - Technical Specification
  • JB/T 7064-1993 General Specifications for Semiconductor Inverters
  • JB/T 7022-2002 Specification for rotor forgings for industrial steam turbines
  • JB/T 7022-1993 Specifications for industrial steam turbine rotor body forgings

Professional Standard - Electron

  • SJ/T 10825-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2013 HTL Hex inverters
  • SJ/T 10821-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2007 HTL Quad inverters
  • SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
  • SJ/T 10810-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1004 TTL Hex inverters (Applicable for certification)
  • SJ 1794-1981 General specification for diffusion furnace for semiconductor device manufacturing
  • SJ 20179-1992 Semiconductor discrete device-Detail specification for reverse-blocking thyristor for Type 3CT103
  • SJ 20181-1992 Semiconductor discrete device-Detail specification for reverse-blocking thyristor for Type 3CT107
  • SJ 20180-1992 Semiconductor discrete device-Detail specification for reverse-blocking thyristor for Type 3CT105
  • SJ/T 10883-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CDA7520 10-bit D/A converters (Applicable for certification)
  • SJ/T 10149-1991 Graphic base of electronic components graphics of semiconductor discrete device
  • SJ 2355.3-1983 Method of measurement for reverse current of light-emitting devices
  • SJ 50033/109-1996 Semiconductor optoelectronic devices - Detail specification for Types GJ903T and GJ9032T and GJ9034T semiconductor laser diodes
  • SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices

未注明发布机构

  • DIN EN 60749-44 E:2014-08 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • IEEE Std 300-1988(R2006) IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors

Professional Standard - Railway

  • TB/T 2437-1993 Specifications for locomotive semi-conductor converters

Professional Standard - Agriculture

  • GB/T 43967-2024 Space environment—Test method of single event effects induced by pulsed laser of semiconductor devices for space application

机械电子工业部

  • JB 5781-1991 Technical conditions of profile radiators for power semiconductor devices

Professional Standard - Military and Civilian Products

  • WJ 1807-2000 Technical screening conditions of semiconductor diodes and triodes for use of ordnance

Professional Standard - Aviation

  • HB 5832-1983 Technical Specifications of Semiconductor Diode and Triode Screening for Aviation

Professional Standard - Traffic

  • JT/T 1512-2024 Technical requirements for semiconductor low-voltage power distribution equipment for passenger cars

Association Francaise de Normalisation

  • NF EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: test method for the effects of a single event (SEE) irradiated by a neutron beam for semiconductor devices
  • NF C86-010:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Generic specification.
  • NF EN IEC 62435-3:2020 Electronic components - Long-term storage of semiconductor electronic devices - Part 3: data
  • NF C96-435-3*NF EN IEC 62435-3:2020 Electronic components - Long-term storage of electronic semiconductor devices - Part 3 : data
  • NF C96-779-3*NF EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3 : functional type and its operational conditions
  • NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
  • NF C93-884-8*NF EN 62149-8:2014 Fibre optic active components and devices - Performance standard - Part 8 : seeded reflective semiconductor optical amplifier devices
  • NF EN 62417:2010 Semiconductor Devices – Mobile Ion Testing for Metal Oxide Field Effect Semiconductor Transistors (MOSFETs)
  • NF EN 62416:2010 Semiconductor Devices – Hot Carrier Testing on MOS Transistors
  • NF C80-202*NF EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • NF C93-884-9*NF EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9 : seeded reflective semiconductor optical amplifier transceivers
  • NF EN 62779-3:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 3 : type fonctionnel et ses conditions d'utilisation
  • NF EN 62047-19:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 19 : compas électroniques
  • NF C96-435-4*NF EN IEC 62435-4:2018 Electronic components - Long-term storage of electronic semiconductor devices - Part 4 : storage
  • NF EN 62435-1:2017 Electronic components - Long-term storage of semiconductor electronic devices - Part 1: general

SCC

  • IEC 60146:1973/AMD1:1975 Amendment 1 - Semiconductor convertors
  • DANSK DS/EN 60749-44:2016 Semiconductor devices – Mechanical and climatic test methods – Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • CEI EN 60749-44:2017 Semiconductor devices - Mechanical and climatic test methods Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • IEC 60333:1983 Test procedures for semiconductor charged-particle detectors
  • CEI 22-2:1998 Semiconductor power electronic converters for industrial and traction applications
  • DANSK DS/EN IEC 62435-3:2020 Electronic components – Long-term storage of electronic semiconductor devices – Part 3: Data
  • CEI EN IEC 62435-3:2020 Electronic components - Long-term storage of electronic semiconductor devices Part 3: Data
  • CEI EN 62779-3:2017 Semiconductor devices - Semiconductor interface for human body communication Part 3: Functional type and its operational conditions
  • DIN EN 60749-44 E:2014 Draft Document - Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 47/2193/CD:2014)
  • BS 3839:1965 Oxygen free high conductivity copper for electronic tubes and semiconductor devices
  • DANSK DS/EN 62779-3:2016 Semiconductor devices – Semiconductor interface for human body communication – Part 3: Functional type and its operational conditions
  • CEI EN 62149-8:2015 Fibre optic active components and devices - Performance standard Part 8: Seeded reflective semiconductor optical amplifier devices
  • DANSK DS/EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices
  • DIN EN IEC 62435-3:2022 Electronic components - Long-term storage of electronic semiconductor devices - Part 3: Data (IEC 62435-3:2020); German version EN IEC 62435-3:2020
  • CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • CEI EN 62416:2011 Semiconductor devices - Hot carrier test on MOS transistors
  • DANSK DS/EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noice detection (PIND)
  • DANSK DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • DIN IEC 60333:1995 Nuclear instrumentation - Semiconductor charged-particle detectors - Test procedures (IEC 60333:1993)
  • DANSK DS/EN 62047-19:2013 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
  • CEI EN 62047-19:2014 Semiconductor devices - Micro-electromechanical devices Part 19: Electronic compasses
  • BS 9970-0:1985 Harmonized system of quality assessment for electronic components. Semiconductor devices-Generic specification
  • DIN EN 62779-3 E:2014 Draft Document - Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (IEC 47/2197/CD:2014)
  • CEI EN IEC 62435-4:2018 Electronic components - Long-term storage of electronic semiconductor devices Part 4: Storage

GSO

  • GSO IEC 60749-44:2021 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • GSO IEC 60333:2009 Nuclear instrumentation - Semiconductor charged-particle detectors - Test procedures
  • GSO IEC 62779-3:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • OS GSO IEC 60333:2009 Nuclear instrumentation - Semiconductor charged-particle detectors - Test procedures
  • GSO IEC 62149-8:2017 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices
  • OS GSO IEC 62149-8:2017 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices
  • BH GSO IEC 62047-19:2022 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
  • GSO IEC 62047-19:2021 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
  • BH GSO IEC 62435-4:2022 Electronic components - Long-term storage of electronic semiconductor devices - Part 4: Storage

German Institute for Standardization

  • DIN EN 60749-44:2017-04 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
  • DIN 50452-2:2009 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
  • DIN 50452-3:1995-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
  • DIN 41762-2:1974-02 Static power convertors; rating code designation for semiconductor convertor stacks and assemblies, monocrystalline semiconductor convertor stacks and assemblies
  • DIN 50452-3:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
  • DIN 50452-2:1991 Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters
  • DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 62416:2010-12 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
  • DIN EN 60749-16:2003-09 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003
  • DIN 50452-1:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
  • DIN EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003
  • DIN EN 60749-44:2017 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
  • DIN EN 62047-19:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses (IEC 62047-19:2013); German version EN 62047-19:2013

British Standards Institution (BSI)

  • BS EN 60749-44:2016 Semiconductor devices. Mechanical and climatic test methods. Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • BS EN 62779-3:2016 Semiconductor devices. Semiconductor interface for human body communication. Functional type and its operational conditions
  • BS EN IEC 62435-3:2020 Electronic components. Long-term storage of electronic semiconductor devices - Data
  • BS EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Particle impact noise detection (PIND)
  • BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • BS EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices. - Part 5: Die and wafer devices
  • BS EN IEC 62435-4:2018 Electronic components. Long-term storage of electronic semiconductor devices. Storage
  • BS IEC 60747-18-1:2019 Semiconductor devices. Semiconductor bio sensors. Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • BS EN IEC 62435-8:2020 Electronic components. Long-term storage of electronic semiconductor devices - Passive electronic devices
  • BS EN IEC 62435-9:2021 Electronic components. Long-term storage of electronic semiconductor devices. Special cases
  • BS EN 62047-5:2011 Semiconductor devices. Micro-electromechanical devices. RF MEMS switches
  • BS EN 62047-19:2013 Semiconductor devices. Micro-electromechanical devices. Electronic compasses
  • BS 3839:1978 Specification for oxygen-free high-conductivity copper for electronic tubes and semiconductor devices
  • BS QC 790304:1994 Specification for harmonized system of quality assessment for electronic components. Semiconductor devices. Integrated circuits. Blank detail specification. Linear analogue-to-digital converters (ADC)
  • BS EN IEC 62969-4:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. Evaluation method of data interface for automotive vehicle sensors
  • BS QC 790303:1994 Specification for harmonized system of quality assessment for electronic components. Semiconductor devices. Integrated circuits. Blank detail specification. Linear digital-to-analogue converters (DAC)
  • BS IEC 60748-4-3:2006 Semiconductor devices. Integrated circuits - Interface integrated circuits. Dynamic criteria for analogue-digital converters (ADC)
  • BS EN IEC 62435-7:2021 Electronic components. Long-term storage of electronic semiconductor devices. Micro-electromechanical devices
  • BS EN 62435-1:2017 Electronic components. Long-term storage of electronic semiconductor devices - General
  • 18/30367158 DC BS EN 62435-3. Electronic components. Long-term storage of electronic semiconductor devices. Part 3. Data
  • BS QC 720100:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Sectional specification for optoelectronic devices
  • BS IEC 60748-2:1998 Semiconductor devices. Integrated circuits. Digital integrated circuits
  • BS IEC 60748-2:1997 Semiconductor devices - Integrated circuits - Digital integrated circuits

ES-UNE

  • UNE-EN 300386 V1.5.1:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
  • UNE-EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
  • UNE-EN IEC 62435-3:2020 Electronic components - Long-term storage of electronic semiconductor devices - Part 3: Data (Endorsed by Asociación Española de Normalización in June of 2020.)
  • UNE-EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (Endorsed by AENOR in July of 2016.)
  • UNE-EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices (Endorsed by AENOR in August of 2014.)
  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62047-19:2013 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses (Endorsed by AENOR in November of 2013.)
  • UNE-EN IEC 62435-4:2018 Electronic components - Long-term storage of electronic semiconductor devices - Part 4: Storage (Endorsed by Asociación Española de Normalización in September of 2018.)

PH-BPS

  • PNS IEC 60749-44:2021 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • PNS IEC 62435-3:2021 Electronic components - Long-term storage of electronic semiconductor devices - Part 3: Data

International Electrotechnical Commission (IEC)

  • IEC 60747-16-3:2010 Semiconductor devices – Part 16-3: Microwave integrated circuits – Frequency converters
  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
  • IEC 62435-3:2020 Electronic components - Long-term storage of electronic semiconductor devices - Part 3: Data
  • IEC 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices
  • IEC 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • IEC 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND)
  • IEC 60747-7-5:2005 Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications
  • IEC 62435-1:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 1: General

American National Standards Institute (ANSI)

CZ-CSN

  • CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
  • CSN 35 8773-1977 Meaaurement of semiconductor devices. Thyristors. Meaaurement of blocking current and reverse blocking current.
  • CSN 35 8851-1987 Semiconductor optoelectronic devices. Nomenclature, definition and letter symbols of parameters
  • CSN 34 5912-1987 Wire of aluminium-silicon alloy for bonding of electronic semiconductor devices

RU-GOST R

  • GOST 20859.1-1989 Power semiconductor devices. General technical requirements
  • GOST 30617-1998 Power semiconductor modules. General specifications
  • GOST 24376-1991 Semiconductor inverters. General specifications
  • GOST 24607-1988 Semiconductor frequency converters. General technical requirements
  • GOST 20215-1984 Semiconductor microwave diodes. General specifications
  • GOST 28624-1990 Semiconductor devices. Part 11. Sectional specification for discrete devices
  • GOST 24354-1980 Semiconductor character displays. Basic dimensions
  • GOST 27299-1987 Semiconductor optoelectronic devices. Terms, definitions and letter symbols of parameters

GOST

  • GOST R 71057-2023 Integrated semiconductor circuits. Analog-to-digital and digital-to-analog converters. Parameters system
  • GOST R 71070-2023 Electronic semiconductor devices. Terms and definitions
  • GOST 20859.1-1979 Semiconductor power devices of a single unified series. General technical conditions
  • GOST R 71014-2023 Semiconductor and optoelectronic devices. Octrons. Parameters system

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

  • IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors
  • IEEE 300-1982 STANDARD TEST PROCEDURES FOR SEMICONDUCTOR CHARGED-PARTICLE DETECTORS

European Committee for Electrotechnical Standardization(CENELEC)

  • EN IEC 62435-3:2020 Electronic components - Long-term storage of electronic semiconductor devices - Part 3: Data
  • EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices
  • EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers
  • EN 62435-1:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 1: General

American Society for Testing and Materials (ASTM)

  • ASTM F1192-24 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
  • ASTM F1192-11 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

Institute of Electrical and Electronics Engineers (IEEE)

Defense Logistics Agency

Danish Standards Foundation

  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • DS/EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noice detection (PIND)
  • DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices

VDE - VDE Verlag GmbH@ Berlin@ Germany

  • VDE 0884-79-3-2017 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (IEC 62779-3:2016); German version EN 62779-3:2016
  • VDE 0884-79-3-2014 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (IEC 47/2197/CD:2014)
  • VDE 0886-149-8-2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices (IEC 62149-8:2014); German version EN 62149-8:2014

PL-PKN

  • PN-EN IEC 62435-3-2020-11 E Electronic components - Long-term storage of electronic semiconductor devices - Part 3: Data (IEC 62435-3:2020)
  • PN E01200-05-1992 Graphical symbols for diagrams Semiconductor devices and electron tubes

AIA/NAS - Aerospace Industries Association of America Inc.

  • NAS4121-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Formed
  • NAS4122-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Extruded
  • NAS4119-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Press-On Type
  • NAS4119-2011 HEAT SINK@ ELECTRONIC COMPONENT@ SEMICONDUCTOR DEVICES@ PRESS-ON TYPE (Rev 1)
  • NAS4124-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Dual Link

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

  • JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

Korean Agency for Technology and Standards (KATS)

  • KS C IEC 60749-16:2006 Semiconductor devices-Mechanical and climatic test methods-Part 16:Particle impact noise detection(PIND)
  • KS C IEC 60749-16-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 16:Particle impact noise detection(PIND)
  • KS C IEC 60749-16-2021 Semiconductor devices-Mechanical and climatic test methods-Part 16:Particle impact noise detection(PIND)
  • KS V 8209-1999(2004) Electrical installations in ships Part 304:Equipment-Semiconductor convertors
  • KS C 6520-2008 Components and materials of semiconductor process-Measurement of wear characteristics by plasma

Aerospace Industries Association/ANSI Aerospace Standards

AENOR

  • UNE-EN 60749-16:2003 Semiconductor devices. Mechanical and climatic test methods. Part 16: Particle impact noise detection (PIND)

Aerospace Industries Association

  • AIA NAS 4122-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Extruded
  • AIA NAS 4124-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Dual Link
  • AIA NAS 4119-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Press-On Type
  • AIA NAS 4121-1996 Heat Sink, Electrical-Electronic Component, Semiconductor Devices, Formed FSC 5999

FI-SFS

  • SFS 5327-1987 Glossary of electronic technology. Semiconductor components and overall circuits

Lithuanian Standards Office

  • LST EN 62416-2010 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010)