GB/T 42839-2023 in English
VALIDSemiconductor integrated circuits—Analog digital (AD) converter
- Issued on:2023-08-06
- Implemented on:2023-12-01
- File Format:PDF
- Delivery:Via email within 5 business days
$476.00
《GB/T 42839-2023半导体集成电路 模拟数字(AD)转换器》由TC599(全国集成电路标准化技术委员会)归口,主管部门为工业和信息化部(电子)。
Introduction
Analysis of the core content of the standard
| Technical dimensions | Standard requirements | Industry significance |
|---|---|---|
| Temperature classification | Class A (0-70℃) to Class F (wider range) | Clearly define the applicable boundaries of industrial/military-grade devices |
| Static characteristics | DNL/INL≤±0.9LSB | Guarantee high-precision system linearity |
| Dynamic characteristics | ENOB≥12bit@100MSPS | Meet the sampling needs of 5G communications |
Analysis of ADC technology evolution
The standard for the first time includes Σ-Δ modulation type and pipeline type ADC into the specification, reflecting the technological breakthroughs of domestic chips in the field of high speed and high precision.
- Σ-Δ type: 24bit+ resolution achieved through oversampling and noise shaping
- Pipeline type: Multi-stage sub-ADC is used to achieve sampling rate above 1GSPS
Key test methods
Dynamic characteristics test case
Standard 6.3.2 stipulates that FFT spectrum analysis method is used to measure ENOB:
- Input -0.5dBFS sinusoidal signal
- Collect 8192 points of conversion data
- Calculate SINAD=1.76+6.02×ENOB
Quality inspection system
Three types of quality assessment requirements:
| Category | Aging time | ESD requirements |
|---|---|---|
| Class I | 168h | 2kV HBM |
| Class III | 4000h | 4kV HBM |
Implementation suggestions
- Medical equipment should give priority to Σ-Δ type ADC to ensure signal-to-noise ratio
- Military systems must pass the 240h aging screening in Clause 7.8
- During dynamic testing, pay attention to the clock jitter should be <1ps RMS

Loading PDF document...
Error loading PDF. Please make sure the file is valid and try again.
We also recommend
-

GB/T 42744-2023 in English
Microwave circuit—Measuring methods for electrically controlled attenuator
2023-08-06 -

GB/T 9424-1998 in English
Semiconductor devices --Integrated circuits --Part 2:Digital integrated circuits --Section five --Blank detail specification for complementary MOS digital integrated circuits,series 4 0
1988-06-02 -

GB/T 44777-2024 in English
Guideline for intellectual property(IP) core protection
2024-10-26 -

GB/T 6798-1996 in English
Semiconductor integrated circuits-General principles of measuring methods of voltage comparators
1986-08-02 -

GB/T 42968.3-2025 in English
Integrated circuits—Measurement of electromagnetic immunity—Part 3: Bulk current injection (BCI) method
2025-12-02 -

GB/T 44937.5-2025 in English
Integrated circuits—Measurement of electromagnetic emissions—Part 5: Measurement of conducted emissions—Workbench Faraday Cage method
2025-12-31 -

GB/T 12750-2006 in English
Semiconductor devices―Integrated circuits―Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits
2006-08-23 -

GB 9425-1988 in English
Blank detail specification for semiconductor integrated circuit operational amplifiers
1988-04-23 -

GB/T 33657-2017 in English
Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells
2017-05-12 -

GB/T 17572-1998 in English
Semiconductor devices--Integrated circuits Part 2:Digital integrated circuits Section four--Family specification for complementary MOS digital integrated circuits,series 4 000B and 4 000UB
1998-01-01