SJ 2759-1987 in English
ABOLISHEDDetail specification for glass passivation package high voltage silicon rectifier stacks, Type 2CZ21~29
- Issued on:1987-02-10
- Implemented on:1987-10-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$175.00
| Standard No: | SJ 2759-1987 |
| Document status: | ABOLISHED |
| Title in English: | Detail specification for glass passivation package high voltage silicon rectifier stacks, Type 2CZ21~29 |
| Title in Chinese: | ２ＣＬ２１～２９型玻璃钝化封装高压硅堆详细规范 |
| Language: | English |
| File Format: | Electronic (PDF) |
| Delivery: | Via email within 1~3 business days |
| Issued on: | 1987-02-10 |
| Implemented on: | 1987-10-01 |
| Chinese Classification: | F01-Technical management |
| Professional Classification: | SJ-Electronics |
| Related Keywords: | high voltage silicon rectifier stacks
glass passivation package detail specification specification detail |
| Related Topics: | passivation
Silicon Passivated Cadmium encapsulation |
Loading PDF document...
Error loading PDF. Please make sure the file is valid and try again.
We also recommend
-
SJ 2658-1986 in English
Method of measurement for semiconductor infrared diodes
1986-01-21 -
SJ 2247-1982 in English
Outlines dimension for semiconductor optoelectronic devices
1982-12-24 -
SJ 1225-1977 in English
Detail specification for germanium detector diodes,Type 2AP11~2AP17
1977-12-26 -
SJ/T 11086-1996 in English
Specification of gap sparker for type FD08, FD12 and FD15
1996-11-20 -
SJ/Z 9021.3-1987 in English
Mechanical standardization of semiconductor devices - Part 3: General rules for the preparation of outline drawings of integrated circuits
1987-09-14 -
SJ 20320-1993 in English
Capacitors, fixed, electrolytic (non-solid electrolyte), tantalum, established reliability, Style CAK39, Detail specification for
1993-05-11 -
SJ/T 10482-1994 in English
Test method for characterizing semiconductor deep levels by transient capacitance techniques
1994-04-11 -
SJ 767-1974 in English
Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD53 and 3DD54
1974-10-01 -
SJ 1405-1978 in English
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA1
1979-07-01
