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SJ/T 11586-2016 in English

SJ/T 11586-2016 in English

VALID

l0keV X-ray total dose radiation testing method of semiconductor devices

  • Issued on:2016-01-15
  • Implemented on:2016-06-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $180.00
$175.00
Standard No: SJ/T 11586-2016
Document status: VALID
Title in English: l0keV X-ray total dose radiation testing method of semiconductor devices
Title in Chinese: 半导体器件 10keV低能X射线总剂量辐射试验方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2016-01-15
Implemented on: 2016-06-01
Professional Classification: SJ-Electronics
Related Keywords: l0kev x-ray total dose radiation
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本标准规定了使用 X 射线辐射仪(光子平均能量约 10keV,最大光子能量不超过100keV)对半导体器件和电路进行电离辐射效应试验的方法和程序。适用于半导体器件的总剂量电离辐照评估试验。


Introduction

This standard provides a methodology for conducting total dose irradiation tests on semiconductor devices using low-energy X-rays with an energy level of 10KeV. It outlines the procedures, equipment requirements, and test conditions necessary to assess the impact of radiation on the performance and reliability of semiconductor components. The standard specifies the irradiation process, measurement techniques, and data analysis methods to ensure consistency and reproducibility in testing. It also defines the parameters and conditions under which the tests should be performed to obtain reliable results. The document serves as a reference for manufacturers, researchers, and testing laboratories involved in the evaluation of semiconductor devices exposed to radiation environments.

*** Please note: This description may not be accurate, please refer to the official documentation.

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