YS/T 15-2015 in English

This standard specifies a method for determining the thickness of silicon epitaxial layers and diffusion layers using the angle grinding and staining technique. It outlines the necessary equipment, materials, and procedures for preparing samples and conducting measurements. The method involves grinding the sample at an angle, followed by staining to reveal the layers, which are then examined under appropriate magnification. Detailed steps for calibration, measurement, and data recording are provided to ensure accuracy and consistency. The standard also includes guidelines for reporting results and handling uncertainties. This document is applicable to the semiconductor industry and related fields where precise measurement of thin layers is required. It serves as a reference for quality control, process optimization, and research and development activities involving silicon-based materials.