Avalanche Diode Parameters

Avalanche Diode Parameters, Total:20 items.

The international standard classification for "Avalanche Diode Parameters" includes: Optoelectronics. Laser equipment , Electrical and electronic equipment .

The Chinese standard classification for "Avalanche Diode Parameters" includes: Technical management , Optical communication equipment , Electronic and electrical equipment .

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Professional Standard - Electron

• SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
• SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
• SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
• SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
• SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
• SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
• SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
• SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
• SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
• SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes

邮电部

• YD/T 0835-1996 Avalanche photodiode detection method

Professional Standard - Post and Telecommunication

• YD/T 835-1996 Test Method of Avalanche Photodiodes

Professional Standard - Military and Civilian Products

• WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
• WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes

Guizhou Provincial Standard of the People's Republic of China

• DB52/T 861-2013 Detail specification for 2CB003 type silicon avalanche rectifier diode

Professional Standard - Automobile

• QC/T 706-2004 Technical specification of silicon avalanche rectification for motor vehicles

GOST

• GOST R 70786-2023 Avalanche pulse semiconductor diodes. Parameter system

British Standards Institution (BSI)

• BS 9300 C476:1973 Detail specification for silicon avalanche rectifier diode
• BS 9300 C667-668:1971 Detail specification for silicon avalanche rectifier diodes

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

• JEDEC JESD210-2007 Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors

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